Theoretical Study of Nitride Wide Bandgap Semiconductors forElectronic and Optical Applications

电子和光学应用氮化物宽带隙半导体的理论研究

• 批准号: 9222387
• 负责人: Walter Lambrecht
• 金额: $ 23.4万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-03-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9222387&HistoricalAwards=false
• 关键词: Theoretical; Study; Nitride; Wide; Bandgap

This research will provide theoretical investigations of several areas which are crucial to the emerging class of wide bandgap semiconductor compounds comprised of group three-nitrides. A range of basic properties, including the electronic transport and optical properties of aluminum nitride, gallium nitride and indium nitride, will be calculated by means of first-principles methods. Calculations of the dependence of the electronic properties on strain and optical phonon distortions will provide information needed in the modeling of high temperature transport. The optical response functions and other spectroscopic information will be calculated for both the zincblende and the wurtzite forms. The nitrogen vacancy, an important defect for the quality of the material, will be investigated. The project will study the corresponding properties for ternay alloy systems composed of aluminum and gallium, and indium and gallium with nitrogen, as well as the pseudo-binary alloy of silicon carbide with aluminum nitride. This part of the work will make use of appropriate statistical models in the treatment of disorder. The optical properties of small period superlattices and the band-offsets of heterostructures will be studied. The work is expected to have a significant impact on the characterization efforts of material produced by novel growth techniques currently under development. This will assist the development of opto-electronic devices operating at short wavelengths and at high temperatures. %%% Computationally intensive research will be conducted in order to calculate the properties of a new class of semiconductor compounds which have the potential for many applications. These complex materials, which are based on the nitrides, are particularly useful for their optical properties in addition to their electronic ones. Also, these are hard materials which can function at high temperatures. Thus, applications requiring opto-electronic devices operating at high temperatures will benefit.

这项研究将提供几个理论研究 对新兴的宽带隙电子产品至关重要的领域 包括第三族氮化物的半导体化合物。 一系列 的基本性质，包括电子输运和光学 氮化铝、氮化镓和氮化铟的性质， 将通过第一原理方法计算。 计算了电子性质与 应变和光学声子畸变将提供信息 在高温运输建模中所需要的。 光学 响应函数和其他光谱信息将被 计算了氧化锌和纤锌矿的含量。 的 氮空位，一个重要的缺陷的质量， 材料，将进行调查。 该项目将研究 组成的三元合金系统的相应性能， 铝和镓，铟和镓与氮， 作为碳化硅与铝的伪二元合金 氮化物 这部分工作将利用适当的 治疗疾病的统计模型。 光学 小周期超晶格的性质和 将研究异质结。 这项工作预计将有一个 对材料表征工作的重大影响 由目前正在开发的新的生长技术产生。 这将有助于光电子器件的发展 在短波长和高温下工作。 %%% 将进行计算密集型研究，以便 计算一类新的半导体化合物的性质 其具有许多应用的潜力。 这些复杂 基于氮化物的材料特别有用 因为它们的光学特性以及它们的电子特性。 此外，这些是可以在高温下工作的硬质材料。 温度 因此，需要光电器件的应用 在高温下操作将是有益的。