Gallium and Indium Chalcogenides: Molecules, New Phases andApplications

该奖项由化学部门在先进材料和加工项目中颁发，以支持Andrew Barron博士对镓和铟硫系分子、相和应用的研究。具体来说，III/VI族配合物的几何形状将在热化学气相沉积后转化为可预测的固相。此外，这些新的固相沉积在砷化镓半导体表面将提供晶格匹配的薄膜，将钝化表面。作为一个例子，制备了硫化镓前驱体，形成了新的硫化镓立方相。研究的目标是扩展这些结果，包括新的立方相的电子表征和应用的开发。将合成铟和镓的新型金属有机硫系化合物，并将其用于制备已知相和新相的硫系铟和镓薄膜。最终目标是制造和测试基于这些薄膜的实际设备。这项研究将扩展新的III/VI固态材料的基础化学和实际光伏和光电子应用。

This award is made in the Advanced Materials and Processing Program by the Chemistry Division in support of Dr. Andrew Barron's research on gallium and indium chalcogenide molecules, phases and applications. Specifically, Group III/VI complexes will be prepared with geometries which will transform into predictable solid phases upon thermal chemical vapor deposition. Additionally, deposition of these new solid phases on gallium arsenide semiconductor surfaces will provide lattice-matched films that will passivate the surface. As an example, gallium sulfide precursors have been prepared which form a new cubic phase of gallium sulfide. The goal of the research is to extend these results, including the electronic characterization of, and development of applications for, the new cubic phase. New metalorganic chalcogenide compounds of indium and gallium will be synthesized and used for growth of indium and gallium chalcogenide thin films, both of known and new phases. An ultimate goal is the fabrication and testing of actual devices based on these films. %%% This research will extend both the fundamental chemistry and the practical photovoltaic and optoelectronic applications of new III/VI solid state materials.