Gallium and Indium Chalcogenides: Molecules, New Phases andApplications

镓和铟硫族化物：分子、新相和应用

• 批准号: 9222498
• 负责人: Andrew Barron
• 金额: $ 23.5万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-04-01 至 1996-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9222498&HistoricalAwards=false
• 关键词: Gallium; Indium; Chalcogenides; Molecules; New

This award is made in the Advanced Materials and Processing Program by the Chemistry Division in support of Dr. Andrew Barron's research on gallium and indium chalcogenide molecules, phases and applications. Specifically, Group III/VI complexes will be prepared with geometries which will transform into predictable solid phases upon thermal chemical vapor deposition. Additionally, deposition of these new solid phases on gallium arsenide semiconductor surfaces will provide lattice-matched films that will passivate the surface. As an example, gallium sulfide precursors have been prepared which form a new cubic phase of gallium sulfide. The goal of the research is to extend these results, including the electronic characterization of, and development of applications for, the new cubic phase. New metalorganic chalcogenide compounds of indium and gallium will be synthesized and used for growth of indium and gallium chalcogenide thin films, both of known and new phases. An ultimate goal is the fabrication and testing of actual devices based on these films. %%% This research will extend both the fundamental chemistry and the practical photovoltaic and optoelectronic applications of new III/VI solid state materials.

该奖项是在先进材料和加工 化学部支持安德鲁博士的计划 巴伦对镓和铟硫属化合物分子的研究， 阶段和应用。具体地，III/VI族络合物 将准备好几何形状， 热化学汽相可预测固相 证词此外，这些新固相的沉积 在砷化镓半导体表面上将提供 晶格匹配薄膜将使表面钝化。作为 例如，已经制备了硫化镓前体， 形成硫化镓的新立方相。的目标 研究是为了扩展这些结果，包括电子 的特点和应用开发 新立方相。新的金属有机硫族化合物 铟和镓将被合成并用于生长 铟和镓硫属化物薄膜， 新阶段。最终目标是制造和测试 基于这些电影的真实设备。 %%% 这项研究将扩展基础化学和 的实际光伏和光电应用 新的III/VI固态材料。