Collaborative Research: FuSe: Indium selenides based back end of line neuromorphic accelerators

合作研究:FuSe:基于硒化铟的后端神经形态加速器

基本信息

  • 批准号:
    2328743
  • 负责人:
  • 金额:
    $ 95万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2023
  • 资助国家:
    美国
  • 起止时间:
    2023-10-01 至 2026-09-30
  • 项目状态:
    未结题

项目摘要

This project aims to use innovative materials called “2D materials” to enhance the capabilities of modern integrated circuits. These materials have unique electronic properties that make them very promising for compute, storage, and sensing technologies. However, integrating them with existing silicon-based technology has been a challenge due to temperature restrictions. Luckily, a new group of materials called “indium-based chalcogenides” offers a solution, as they can be synthesized at low temperatures compatible with current technology. The project team plans to create a range of devices using these materials to accelerate the performance of energy-efficient spiking neural networks (SNNs). These brain-inspired microchips will revolutionize how audio, visual, tactile, and olfactory information is processed, making devices smarter and more responsive. Moreover, these microchips could be used in autonomous vehicles, drones, and robots, helping them navigate and avoid obstacles. The project also focuses on training the next generation of scientists and engineers and promoting diversity and inclusivity in the field.This project aims to address the challenge of integrating novel 2D materials with the state-of-the-art silicon-based complementary metal oxide semiconductor (CMOS) technology at the back end of line (BEOL). The key innovation lies in leveraging indium-based chalcogenides, such as InSe and In2Se3, which can be synthesized at low temperatures, making them compatible with BEOL processes. The team plans to synthesize and characterize these materials to fabricate an array of sensing, encoding, computing, and memory devices for hardware acceleration of energy-efficient spiking neural networks (SNNs). The project will involve a cross-layer co-optimization approach that encompasses material discovery, synthesis and deposition techniques, process flow development, and device-circuit-architecture co-design. The goal is to develop brain-inspired SNN microchips through 2D/CMOS heterogeneous and monolithic integration, which will lead to substantial reductions in energy consumption and pave the way for sustainable computing paradigms. The broader impact of this work extends to applications on the Internet of Things (IoT) domain, where the brain-mimetic SNN microchips will enable advanced audio, visual, tactile, and olfactory information processing. Additionally, the project emphasizes education and training, promoting diversity and inclusiveness in the workforce.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该项目旨在使用称为“2D材料”的创新材料来增强现代集成电路的能力。这些材料具有独特的电子特性,使它们在计算,存储和传感技术方面非常有前途。然而,由于温度限制,将它们与现有的硅基技术集成一直是一个挑战。幸运的是,一组名为“铟基硫属化物”的新材料提供了一种解决方案,因为它们可以在与当前技术兼容的低温下合成。该项目团队计划使用这些材料创建一系列设备,以加速节能尖峰神经网络(SNN)的性能。这些受大脑启发的微芯片将彻底改变音频、视觉、触觉和嗅觉信息的处理方式,使设备更智能、反应更灵敏。此外,这些微芯片可用于自动驾驶汽车、无人机和机器人,帮助它们导航和避开障碍物。该项目还致力于培养下一代科学家和工程师,促进该领域的多样性和包容性。该项目旨在解决将新型2D材料与最先进的硅基互补金属氧化物半导体(CMOS)技术在后端线(BEOL)集成的挑战。关键的创新在于利用铟基硫属化物,如InSe和In 2Se 3,它们可以在低温下合成,使它们与BEOL工艺兼容。该团队计划合成和表征这些材料,以制造一系列传感,编码,计算和存储设备,用于节能尖峰神经网络(SNN)的硬件加速。该项目将涉及跨层协同优化方法,包括材料发现、合成和沉积技术、工艺流程开发以及器件-电路-架构协同设计。其目标是通过2D/CMOS异构和单片集成开发大脑启发的SNN微芯片,这将大幅降低能耗,并为可持续计算模式铺平道路。这项工作的更广泛影响扩展到物联网(IoT)领域的应用,其中大脑模拟SNN微芯片将实现先进的音频,视觉,触觉和嗅觉信息处理。此外,该项目强调教育和培训,促进劳动力的多样性和包容性。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

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Ritesh Agarwal其他文献

Guidelines for management of asthma at primary and secondary levels of health care in India (2005).
印度初级和二级卫生保健哮喘管理指南(2005 年)。
An unusual association between Mycobacterium tuberculosis and Aspergillus fumigatus.
结核分枝杆菌和烟曲霉之间存在不寻常的关联。
How long does it take for tuberculosis to cause secondary amyloidosis?
结核病需要多长时间才能引起继发性淀粉样变性?
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    8
  • 作者:
    P. Malhotra;Ritesh Agarwal;A. Awasthi;S. K. Jindal;Radhika Srinivasan
  • 通讯作者:
    Radhika Srinivasan
ETIOLOGY AND OUTCOMES OF ARDS IN THE ELDERLY POPULATION IN A RESPIRATORY ICU IN NORTH INDIA
  • DOI:
    10.1016/j.chest.2019.08.929
  • 发表时间:
    2019-10-01
  • 期刊:
  • 影响因子:
  • 作者:
    Ashutosh Aggarwal;Ritesh Agarwal;Sahajal Dhooria;Kuruswamy Prasad; valliappan muthu
  • 通讯作者:
    valliappan muthu
Estimating the clinically important change for Saint George’s Respiratory Questionnaire in allergic bronchopulmonary aspergillosis
  • DOI:
    10.1016/j.jaip.2022.05.029
  • 发表时间:
    2022-09-01
  • 期刊:
  • 影响因子:
  • 作者:
    Ritesh Agarwal;Inderpaul Singh Sehgal;Valliappan Muthu;Sahajal Dhooria;Kuruswamy Thurai Prasad;Ashutosh Nath Aggarwal;Arunaloke Chakrabarti
  • 通讯作者:
    Arunaloke Chakrabarti

Ritesh Agarwal的其他文献

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{{ truncateString('Ritesh Agarwal', 18)}}的其他基金

Topological Photodetectors
拓扑光电探测器
  • 批准号:
    2230240
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant
Collaborative Research: DMREF: Deep learning guided twistronics for self-assembled quantum optoelectronics
合作研究:DMREF:用于自组装量子光电子学的深度学习引导双电子学
  • 批准号:
    2323468
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant
QII-TAQS: Quantum Circuits Through Symmetry-Driven Valley Optoelectronics
QII-TAQS:通过对称驱动的 Valley Opto electronics 的量子电路
  • 批准号:
    1936276
  • 财政年份:
    2019
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant
Designing new quantum topological nanomaterials via controlled ion-exchange reactions
通过受控离子交换反应设计新型量子拓扑纳米材料
  • 批准号:
    1808202
  • 财政年份:
    2018
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant
Structural and Chemical Changes due to Electrical Stress in Phase-Change Nanowires: An In-Situ Electron Microscopy Study
相变纳米线中电应力引起的结构和化学变化:原位电子显微镜研究
  • 批准号:
    1505127
  • 财政年份:
    2015
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Material World Network: Understanding and Exploiting Mixed-Mode Ultra-Fast Optical-Electrical Behavior in Nanoscale Phase Change Materials
材料世界网络:理解和利用纳米级相变材料中的混合模式超快光电行为
  • 批准号:
    1210503
  • 财政年份:
    2012
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Fundamental Investigation of Charge Transport and Memory Switching in Amorphized Phase-Change Nanowires
非晶相变纳米线中电荷传输和存储开关的基础研究
  • 批准号:
    1002164
  • 财政年份:
    2010
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Nanoscale Crystalline to Amorphous Phase Transition Studies in Nanowires: Controlled Synthesis, Characterization, Memory Switching Devices and Size-Dependent Properties
纳米线中纳米级晶体到非晶态的相变研究:受控合成、表征、存储开关器件和尺寸相关特性
  • 批准号:
    0706381
  • 财政年份:
    2007
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
CAREER: Semiconductor Nanowire Quantum Heterostructures: Growth, Characterization, and Quantum Confined Properties and Photonics at the Nanoscale
职业:半导体纳米线量子异质结构:纳米尺度的生长、表征、量子限制特性和光子学
  • 批准号:
    0644737
  • 财政年份:
    2007
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant
NER: Nanowire Spectrophotometer for Lab-on-a-Chip Chemical Analysis
NER:用于芯片实验室化学分析的纳米线分光光度计
  • 批准号:
    0609083
  • 财政年份:
    2006
  • 资助金额:
    $ 95万
  • 项目类别:
    Standard Grant

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相似海外基金

Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
  • 批准号:
    2328975
  • 财政年份:
    2024
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
  • 批准号:
    2328973
  • 财政年份:
    2024
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
  • 批准号:
    2328972
  • 财政年份:
    2024
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
  • 批准号:
    2328974
  • 财政年份:
    2024
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: Indium selenides based back end of line neuromorphic accelerators
合作研究:FuSe:基于硒化铟的后端神经形态加速器
  • 批准号:
    2328741
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
  • 批准号:
    2328906
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
  • 批准号:
    2328908
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: Collaborative Optically Disaggregated Arrays of Extreme-MIMO Radio Units (CODAeMIMO)
合作研究:FuSe:Extreme-MIMO 无线电单元的协作光学分解阵列 (CODAeMIMO)
  • 批准号:
    2328947
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
FuSe/Collaborative Research: Heterogeneous Integration in Power Electronics for High-Performance Computing (HIPE-HPC)
FuSe/合作研究:用于高性能计算的电力电子异构集成 (HIPE-HPC)
  • 批准号:
    2329063
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
Collaborative Research: FuSe: High-throughput Discovery of Phase Change Materials for Co-designed Electronic and Optical Computational Devices (PHACEO)
合作研究:FuSe:用于共同设计的电子和光学计算设备的相变材料的高通量发现(PHACEO)
  • 批准号:
    2329087
  • 财政年份:
    2023
  • 资助金额:
    $ 95万
  • 项目类别:
    Continuing Grant
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