Experimental Validation of Interconnection and Transistor Delay Models for the GaAs-Based Integrated Circuits

在过去的几年中，砷化镓技术从基础研究迅速发展到器件和电路开发。在制造集成电路之前，了解其预期的传输延迟是至关重要的。为了实现这一目标，已经开发了数值模型来解决并行和交叉VLSI多电平互连中的串扰和传播延迟，以及GaAs mesfet和GaAs/AIGaAs modfet中的横向延迟。除了确定串扰和传播延迟外，该模型还可以用于优化器件和互连尺寸等参数，以实现最小的串扰和延迟。如果要将这些数值模型纳入GaAs CAD工具，通过将建模结果与实际实验观察结果进行比较来验证这些数值模型是至关重要的。本研究主要集中在以下几个目标上：1。设计和制造几种基于砷化镓的逻辑电路，以保留改变各种设计参数的能力；2. 应用互连和最近开发的GaAs MESFET延迟模型来确定这些基于GaAs的逻辑电路的传播延迟；3. 实验测量了这些电路中的传播延迟，并与已开发的延迟模型进行了比较；4. 根据需要修改互连和晶体管延迟模型；和5。最终模型的实验验证。

Goel During the last few years, GaAs technology has emerged rapidly from basic research to device and circuit development. It is crucial to know the expected propagation delays in an integrated circuit before it is fabricated. To meet this objective, numerical models have been developed that address crosstalk and propagation delays in the parallel and crossing VLSI multilevel interconnections as well as for the transverse delays in the GaAs MESFETs and GaAs/AIGaAs MODFETs. In addition to determining the crosstalk and propagation delays, the models can be utilized to achieve the optimization of the device and interconnection dimensions and other parameters for minimum crosstalk and delays. Validation of these numerical models by comparison of the modeling results with actual experimental observations is critical if they are to be incorporated into GaAs CAD tools. This research effort focuses on the following set of objectives: 1. design and fabrication of several GaAs-based logic circuits to retain the ability to alter the various design parameters; 2. application of the interconnection and the GaAs MESFET delay models recently developed for the determination of propagation delays in these GaAs-based logic circuits; 3. experimental measurements of propagation delays in these circuits and comparison with developed delay models; 4. modification of the interconnection and transistor delay models, as required; and 5. experimental validation of the final models.