Propagation Delays in the Bilevel and Trilevel Multilayer High Density Interconnections on the GaAs Based VHSIC

对具有更高速度和更高性能的电路的需求日益增加。 组分密度 这需要数百万个密集的 互连线，其将组件集成在芯片上。 在如此高的温度下，与互连相关联的寄生电容 密度环境已经成为进化的主要因素 VHSIC技术。 特别是对于ASIC的开发， （专用集成电路），重要的是要知道 传播延迟预期在IC（集成电路）之前， 进行制造。 拟议研究的目标是： (a)建立寄生电容的可靠模型 与多层和多层互连相关联， 高密度环境，适用于GaAs基超大规模集成电路; (b)开发精确的模型， 多层和多层互连中的传播延迟 GaAs基超高速集成电路的研究 GaAs基超高速互连线中的串扰 集成电路;以及（d）在集成电路上制造互连线。 GaAs衬底和实验验证的依赖性， 互连尺寸、互连 材料电阻率和其它几何因素。 这项研究预计将提供更好的了解， VLSI芯片上互连线之间的相互作用， 尺寸减小并且芯片上的互连的密度 增加这对超大规模集成电路的持续发展是非常重要的 技术.

There is an increasing demand for circuits with higher speeds and higher component densities. This requires millions of closely spaced interconnection lines that integrate the components on a chip. Parasitic capacitances associated with the interconnections in such high density environments have become the primary factors in the evolution of the VHSIC technology. Particularly for the development of the ASIC's (application specific integrated circuits), it is important to know the propagation delays expected in an IC (integrated circuit) before its fabrication is undertaken. Objectives of the proposed research are: (a) development of reliable models for the parasitic capacitances associated with the multilevel and multilayer interconnection in the high-density environments, suitable for the GaAs-based VLSI circuits; (b) development of accurate models for the determination of the propagation delays in the multilevel and multilayer interconnections on the GaAs-based very high speed integrated circuits; (c) study of the crosstalk in the interconnections on the GaAs-based very high speed integrated circuits; and (d) fabrication of the interconnection lines on the GaAs substrate and experimental verification of the dependence of the propagation delays on the interconnect dimensions, interconnect material resistivity and other geometrical factors. This research is expected to provide a better understanding of the interactions between interconnection lines on VLSI chips as the dimensions decrease and the density of the interconnections on a chip increase. This is very important to the continued development of VLSI technology.