ROW: Career Advancement Award; Strain Effects in Indium Aluminum Arsenide/Indium Phosphide

InAlAs/InP能带依赖性的基础研究 通过测量光致发光， 从II型交错InAlAs/InP界面作为函数 压力使用金刚石砧单元。 之间的相互作用 原子引入的界面粗糙度的有害影响 砷和磷的交换，以及 将探索应变;预计， 通过使用静水压力来调整应变将 提供有关这一独特的 材料 %%% 将对影响人口增长的因素进行研究。 特定化合物的电子和光学性质 具有潜在优点的半导体材料组合 电子和光子学应用。 本研究是 希望能从根本上了解 应变对基本材料的性能和性能。 的 研究中的半导体材料组合具有广泛的 在电子和光电器件中的适用性; 了解应变对电子和光学的影响 性能也有望提高性能， 用于计算的先进设备和集成电路， 信息处理和电信。

Fundamental studies of the dependence of the InAlAs/InP band offset on strain will be conducted by measuring photoluminescence from the Type II staggered InAlAs/InP interface as a function of pressure using a diamond anvil cell. The interplay between the deleterious effects of interface roughness introduced by atomic exchange of arsenic and phosphorus, and the benefits produced by strain will be explored; it is anticipated that the ability to tune the strain through the use of hydrostatic pressure will provide fundamental information on the nature of this unique material. %%% Research will be conducted on the factors that influence the electronic and optical properties of a particular compound semiconductor material combination with potential advantages in electronics and photonics applications. This research is expected to give a fundamental understanding of the effect of strain on basic material properties and performance. The semiconductor material combination under study has wide applicability in electronic and optoelectronic devices; understanding the effects of strain on electronic and optical properties is also expected to improve the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications.