ROW: Career Advancement Award; Strain Effects in Indium Aluminum Arsenide/Indium Phosphide

ROW：职业进步奖；

• 批准号: 9224877
• 负责人: Laurie McNeil
• 金额: $ 4.12万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-07-01 至 1995-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9224877&HistoricalAwards=false
• 关键词: ROW; Career; Advancement; Award; Strain

Fundamental studies of the dependence of the InAlAs/InP band offset on strain will be conducted by measuring photoluminescence from the Type II staggered InAlAs/InP interface as a function of pressure using a diamond anvil cell. The interplay between the deleterious effects of interface roughness introduced by atomic exchange of arsenic and phosphorus, and the benefits produced by strain will be explored; it is anticipated that the ability to tune the strain through the use of hydrostatic pressure will provide fundamental information on the nature of this unique material. %%% Research will be conducted on the factors that influence the electronic and optical properties of a particular compound semiconductor material combination with potential advantages in electronics and photonics applications. This research is expected to give a fundamental understanding of the effect of strain on basic material properties and performance. The semiconductor material combination under study has wide applicability in electronic and optoelectronic devices; understanding the effects of strain on electronic and optical properties is also expected to improve the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications.

InAlAs/InP带偏移量与应变的关系的基础研究将通过使用钻石顶压腔测量InAlAs/InP第二类交错界面的光致发光作为压力的函数来进行。将探讨砷和磷原子交换引起的界面粗糙度有害影响与应变产生的益处之间的相互作用；预计通过使用静水压力来调整应变的能力将提供关于这种独特材料的性质的基本信息。将对在电子和光子学应用中具有潜在优势的特定化合物半导体材料组合的电子和光学性能的影响因素进行研究。这项研究有望对应变对基本材料性能和性能的影响有一个基本的了解。正在研究的半导体材料组合在电子和光电子器件中具有广泛的适用性；了解应变对电子和光学特性的影响也有望改善用于计算、信息处理和电信的先进器件和集成电路的性能。