ROW: Career Advancement Award; Strain Effects in Indium Aluminum Arsenide/Indium Phosphide

通过使用金刚石砧细胞测量II型交错InAlAs/InP界面的光致发光作为压力的函数，将对InAlAs/InP波段偏移对应变的依赖性进行基础研究。探讨砷、磷原子交换带来的界面粗糙度的有害影响与应变产生的好处之间的相互作用；预计通过使用静水压力来调整应变的能力将为这种独特材料的性质提供基本信息。将研究影响特定化合物半导体材料的电子和光学特性的因素，并结合其在电子和光子学应用中的潜在优势。本研究有望对应变对材料基本特性和性能的影响有一个基本的认识。所研究的半导体材料组合在电子和光电子器件中具有广泛的适用性；了解应变对电子和光学特性的影响也有望改善用于计算、信息处理和电信的先进设备和集成电路的性能。

Fundamental studies of the dependence of the InAlAs/InP band offset on strain will be conducted by measuring photoluminescence from the Type II staggered InAlAs/InP interface as a function of pressure using a diamond anvil cell. The interplay between the deleterious effects of interface roughness introduced by atomic exchange of arsenic and phosphorus, and the benefits produced by strain will be explored; it is anticipated that the ability to tune the strain through the use of hydrostatic pressure will provide fundamental information on the nature of this unique material. %%% Research will be conducted on the factors that influence the electronic and optical properties of a particular compound semiconductor material combination with potential advantages in electronics and photonics applications. This research is expected to give a fundamental understanding of the effect of strain on basic material properties and performance. The semiconductor material combination under study has wide applicability in electronic and optoelectronic devices; understanding the effects of strain on electronic and optical properties is also expected to improve the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications.