Polarization-Insensitive Double Quantum Wells for Electro-Optical Applications

用于电光应用的偏振不敏感双量子阱

• 批准号: 9633769
• 负责人: Laurie McNeil
• 金额: $ 3.65万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-03-01 至 1999-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9633769&HistoricalAwards=false
• 关键词: Polarization; Insensitive; Double; Quantum; Wells

9633769 McNeil The goal of this project is to develop polarization-insensitive double quantum well (DQW) structures for applications in the modulation, detection, and amplification of optical signals. Specifically, we will investigate the growth and electron-hole interactions of tensile strained GaAs quantum wells sandwiched between InxA11-xAs barriers. With this configuration we are able to control the polarization characteristics of the optical response while maintaining compatibility with GaAs-based processing. The potential for the use of such structures in devices wherein polarization of the optical response is important has been demonstrated by our recent work in single quantum wells. In this 12 month project we will determine optimum MBE growth conditions which enhance the optical response at room temperature, as is required for device applicability. Using band-offset modeling in conjunction with optical techniques to examine structures of different barrier/well widths and strains, we will explore the DQW designs most suitable for further technological development. The primary methods of growth and characterization to be employed will be molecular beam epitaxy (MBE) and photoluminescence (PL) spectroscopy, respectively. These will be supported by electrical analysis techniques such as Hall and current-voltage measurements, X-ray diffraction, and both transmission and scanning electron microscopy. Optimal growth conditions will be examined by variation of MBE controlled (e.g.-substrate temperature, growth rate, V/III ratio, As overpressure) and structurally based (e.g.-well/barrier widths, strain, doping) parameters. As in our initial work, most of our studies will be of structures grown as GaAs substrates. However, we will also compare the optical characteristics of these structures to those of structures grown on ternary substrates, which provide lattice matching with the InA1As barrier layers. PL measurements, using temperature, excitation intensity and excitation wa velength, and polarization state variations, will be used to elucidate phenomena normally unobservable due to electron-hole transition selection rules for quantum wells. Our parallel goals with respect to the MBE and PL efforts will lay the necessary groundwork for development of practical devices based on these DQW's and similar structures. This is a collaborate research project between Theda Daniels-Race of Duke University and Laurie McNeil of the University of North Carolina-Chapel Hill. ***

该项目的目标是开发偏振不敏感的双量子阱（DQW）结构，用于光信号的调制，检测和放大。 具体来说，我们将研究的生长和电子空穴相互作用的拉伸应变GaAs量子威尔斯夹在InxA 11-xAs障碍。 通过这种配置，我们能够控制光学响应的偏振特性，同时保持与GaAs基处理的兼容性。 我们最近在单量子威尔斯中的工作已经证明了这种结构在光学响应的偏振很重要的器件中的应用潜力。 在这个为期12个月的项目中，我们将确定最佳的MBE生长条件，以增强室温下的光学响应，这是设备适用性所需的。 使用带偏移建模结合光学技术来研究不同的势垒/阱宽度和应变的结构，我们将探索最适合进一步技术发展的DQW设计。 生长和表征的主要方法将采用分子束外延（MBE）和光致发光（PL）光谱，分别。 这些都将支持电气分析技术，如霍尔和电流-电压测量，X射线衍射，透射和扫描电子显微镜。 将通过改变MBE控制（例如，衬底温度、生长速率、V/III比、As超压）和基于结构（例如，阱/势垒宽度、应变、掺杂）参数。 在我们最初的工作中，我们的大部分研究将是作为GaAs衬底生长的结构。 然而，我们也将比较这些结构的光学特性的三元衬底上生长的结构，提供晶格匹配的InA 1As阻挡层。 PL测量，使用温度，激发强度和激发波长，和偏振态的变化，将被用来阐明通常无法观察到的现象，由于量子威尔斯的电子空穴跃迁选择规则。 我们的平行目标方面的MBE和PL的努力将奠定必要的基础，为发展的实际设备的基础上，这些DQW的和类似的结构。 这是杜克大学的Theda Daniels-Race和北卡罗来纳大学教堂山分校的劳里麦克尼尔之间的合作研究项目。 ***