Defects and Self-Compensation in II-VI Semiconductors

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9221210 Swanson Fundamental aspects of point defects and self-compensation phenomena in II-VI semiconductors will be studied using perturbed angular correlation(PAC) measurements, and relating the data to optical, electrical and magnetic properties. The atomic configurations, stabilities, defect mobilities and ionization energies of various charge- compensated donor-defect complexes will be determined. By studying these defects as a function of temperature and annealing treatments it is sought 1)to understand in detail their structure and behavior, 2)to determine the influence of such complexes on bulk properties, and 3)to determine the optimum conditions for minimizing the formation of undesirable charge-compensated defects, and maximizing the activation of donor impurities. Both bulk and thin film materials will be studied. %%% By correlating microscopic PAC observations with bulk electrical and optical properties, it is anticipated that the specific information gained on the nature and significance of defects and defect interactions in wide- and narrow-gap II-VI semiconductors will provide broad insight into the behavior of defects systems in general. This deeper understanding will enable scientists and technologists greater facility in the design and synthesis of devices using these materials, such as infrared sensors, lightemitting diodes, and semiconductor lasers, which, in turn, may yield improvements in integrated circuits used in computing, information processing, and telecommunications. ***