Defects and Self-Compensation in II-VI Semiconductors

II-VI 半导体中的缺陷和自补偿

• 批准号: 9221210
• 负责人: Laurie McNeil
• 金额: $ 18.64万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-01 至 1998-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9221210&HistoricalAwards=false
• 关键词: Defects; Self; Compensation; II; VI

9221210 Swanson Fundamental aspects of point defects and self-compensation phenomena in II-VI semiconductors will be studied using perturbed angular correlation(PAC) measurements, and relating the data to optical, electrical and magnetic properties. The atomic configurations, stabilities, defect mobilities and ionization energies of various charge- compensated donor-defect complexes will be determined. By studying these defects as a function of temperature and annealing treatments it is sought 1)to understand in detail their structure and behavior, 2)to determine the influence of such complexes on bulk properties, and 3)to determine the optimum conditions for minimizing the formation of undesirable charge-compensated defects, and maximizing the activation of donor impurities. Both bulk and thin film materials will be studied. %%% By correlating microscopic PAC observations with bulk electrical and optical properties, it is anticipated that the specific information gained on the nature and significance of defects and defect interactions in wide- and narrow-gap II-VI semiconductors will provide broad insight into the behavior of defects systems in general. This deeper understanding will enable scientists and technologists greater facility in the design and synthesis of devices using these materials, such as infrared sensors, lightemitting diodes, and semiconductor lasers, which, in turn, may yield improvements in integrated circuits used in computing, information processing, and telecommunications. ***

小行星9221210 点缺陷和自补偿现象在II-VI族半导体的基本方面将研究使用扰动角相关（PAC）测量，并将数据与光学，电学和磁学性质。 计算了各种电荷补偿施主-缺陷复合物的原子构型、稳定性、缺陷迁移率和电离能。 通过研究这些缺陷作为温度和退火处理的函数，寻求1）详细了解它们的结构和行为，2）确定这种络合物对体性质的影响，和3）确定用于最小化不期望的电荷补偿缺陷的形成和最大化施主杂质的活化的最佳条件。 体材料和薄膜材料都将被研究。 通过将微观PAC观察结果与体电和光学性质相关联，预计获得的关于宽隙和窄隙II-VI族半导体中缺陷和缺陷相互作用的性质和意义的具体信息将为缺陷系统的行为提供广泛的见解。 这种更深入的理解将使科学家和技术人员更容易设计和合成使用这些材料的设备，如红外传感器，发光二极管和半导体激光器，这反过来又可能改进用于计算，信息处理和电信的集成电路。 ***