Deposition of Yttrium Stabilized Zirconia on Silicon to Form Silicon on Insulator Substrates

在硅上沉积钇稳定氧化锆以在绝缘体基底上形成硅

• 批准号: 9260636
• 负责人: Anton Greenwald
• 金额: $ 5万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-01 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9260636&HistoricalAwards=false
• 关键词: Deposition; Yttrium; Stabilized; Zirconia; Silicon

Spire proposes to demonstrate heteroepitaxial growth of yttria cubic zirconia (YSZ) on silicon which can be used for silicon-on- insulator devices and as a substrate for ferroelectric and high temperature superconducting materials. Because it offers potential improvements in quality of today's technologies at a fraction of the cost, its development could overcome a major barrier to widespread use of silicon-on-insulator substrates. Metalorganic chemical vapor deposition (MOCVD) will be used to deposit YSZ on hydrogen-passivated silicon. The deposited films will be fully characterized for composition and crystal structure. Capacitors will be fabricated to measure the electrical properties of the dielectric. Phase II research would go on to demonstrate growth of superconducting films, lead-zirconia-titanate, and epitaxial silicon layers on VSZ by atmospheric pressure CVD.

SPIRE提出了在硅上异质外延生长可用于绝缘体上的YSZ的方法作为铁电和高温超导材料的衬底。因为它以一小部分的成本提供了当今技术质量的潜在改善，它的开发可以克服绝缘体上硅衬底广泛使用的一个主要障碍。金属有机化学气相沉积(MOCVD)将用于在氢钝化硅上沉积YSZ。沉积的薄膜的成分和晶体结构将得到充分的表征。将制造电容器来测量介质的电特性。第二阶段的研究将继续展示超导薄膜的生长，铅-锆钛酸盐，用常压CVD方法在VSZ上生长外延硅层。