Characterization of Carrier Confinement in Short Wavelength Indium Gallium Aluminum Phosphide Heterostructures for Optoelectronics

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9321422 Menoni Fundamental materials research will be conducted to elucidate and solve basic material problems which prevent the use of Indium Gallium Aluminum Phosphide for short wavelength semiconductor lasers. Growth techniques will be developed to obtain highly efficient multiple quantum well structures. Characterization of the relevant physical properties of these structures will involve measurement of carrier confinement, carrier lifetime and radiative efficiency across the whole range of Aluminum composition. These studies will also evaluate the role of multiple quantum barriers to increase carrier confinement. %%% Increased understanding of the physical properties of Indium Gallium Aluminum Phosphide heterostructures is expected to provide the basis for the design of efficient semiconductor lasers operating in the green-to-red region of the visible spectrum. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***