Characterization of Carrier Confinement in Short Wavelength Indium Gallium Aluminum Phosphide Heterostructures for Optoelectronics

光电子学用短波长磷化铟镓铝异质结构中载流子限制的表征

• 批准号: 9321422
• 负责人: Carmen Menoni
• 金额: $ 25.5万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9321422&HistoricalAwards=false
• 关键词: Characterization; Carrier; Confinement; Short; Wavelength

9321422 Menoni Fundamental materials research will be conducted to elucidate and solve basic material problems which prevent the use of Indium Gallium Aluminum Phosphide for short wavelength semiconductor lasers. Growth techniques will be developed to obtain highly efficient multiple quantum well structures. Characterization of the relevant physical properties of these structures will involve measurement of carrier confinement, carrier lifetime and radiative efficiency across the whole range of Aluminum composition. These studies will also evaluate the role of multiple quantum barriers to increase carrier confinement. %%% Increased understanding of the physical properties of Indium Gallium Aluminum Phosphide heterostructures is expected to provide the basis for the design of efficient semiconductor lasers operating in the green-to-red region of the visible spectrum. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***

9321422 梅诺尼 将进行基础材料研究，以阐明和解决阻碍磷化铟镓铝用于短波长半导体激光器的基础材料问题。 将发展生长技术以获得高效的多量子阱结构。 这些结构的相关物理特性的表征将涉及在整个铝组合物范围内测量载流子限制、载流子寿命和辐射效率。 这些研究还将评估多量子势垒在增加载流子限制方面的作用。 %%% 对磷化铟镓铝异质结构的物理性质的进一步了解有望为设计在可见光谱的绿色到红色区域工作的高效半导体激光器提供基础。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这项研究将有助于提高用于计算，信息处理和电信的先进器件和集成电路的一般性能。 ***