Study of Pure Strain Effects for Improved Long Wavelength Semiconductor Lasers

改进的长波长半导体激光器的纯应变效应研究

• 批准号: 9408321
• 负责人: Carmen Menoni
• 金额: $ 29.45万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-10-01 至 2000-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9408321&HistoricalAwards=false
• 关键词: Study; Pure; Strain; Effects; Improved

It is proposed to apply hydrostatic pressure to vary the built-in strain to conduct a study of the physical processes responsible for the improvements in the laser characteristics with strain. Calculations of the strain in the laser structures under pressure show that an additional strain is generated in the laser active area due to the difference in the elastic constants between the active and cladding years. The cladding and carrier confinement layers, being much thicker than the active layer, deform isotropically with pressure. The additional strain created by high pressure will allow for the first time the tuning of the initial built-in strain from compressive to tensile in a single device. In t his way, it will be possible to evaluate solely the effect of strain and avoid variations in the growth conditions which take place when the effect of strain is evaluated by comparing devices from different waters with different compositions.

建议施加静水压力来改变内置应变，以进行负责的物理过程的研究与应变的激光特性的改善。 在压力下的激光器结构中的应变的计算表明，在激光器的活性区域中产生的额外的应变是由于在活性和包层年之间的弹性常数的差异。 包层和载流子限制层比有源层厚得多，随着压力各向同性地变形。 由高压产生的额外应变将首次允许在单个装置中将初始内置应变从压缩调整为拉伸。 以这种方式，将有可能单独评估应变的影响，并避免当通过比较来自具有不同组成的不同沃茨的装置来评估应变的影响时发生的生长条件的变化。