Study of Pure Strain Effects for Improved Long Wavelength Semiconductor Lasers

提出通过施加静水压力改变内建应变，来研究激光随应变特性改善的物理过程。应力作用下激光结构的应变计算表明，由于活性年和熔覆年之间弹性常数的差异，在激光活性区产生了额外的应变。包层和载流子约束层比活性层厚得多，随压力呈各向同性变形。高压产生的额外应变将允许首次在单个设备中调整初始内置应变从压缩到拉伸。这样，就有可能单独评估应变的影响，并避免通过比较来自不同成分的不同水的装置来评估应变影响时发生的生长条件的变化。。

It is proposed to apply hydrostatic pressure to vary the built-in strain to conduct a study of the physical processes responsible for the improvements in the laser characteristics with strain. Calculations of the strain in the laser structures under pressure show that an additional strain is generated in the laser active area due to the difference in the elastic constants between the active and cladding years. The cladding and carrier confinement layers, being much thicker than the active layer, deform isotropically with pressure. The additional strain created by high pressure will allow for the first time the tuning of the initial built-in strain from compressive to tensile in a single device. In t his way, it will be possible to evaluate solely the effect of strain and avoid variations in the growth conditions which take place when the effect of strain is evaluated by comparing devices from different waters with different compositions.