REU: Femtosecond Dynamics of Novel Optoelectronic Materials

这项研究的目的是进行 体InGaP中的飞秒测量， 获得亚皮秒测量经验 获得初步结果的技术 编写一份研究动态的提案 基于InGaP的多量子阱中载流子的 大气压和高压下的威尔斯井。 一 将开发模型来评估效果 压力对载流子弛豫的影响 InGaP基多量子威尔斯。 的 亚皮秒动力学研究 高压下的半导体是一个领域， 到目前为止还没有被探索过， 提供重要信息， 材料. 一份详细的提案将在 获得NSF Research Initiation Award 计划完成后， 初步研究。

The object of this research is to conduct femtosecond measurements in bulk InGaP to gain experience of subpicosecond measurement techniques to obtain preliminary results for the preparation of a proposal to study the dynamics of carriers in InGaP based multiple quantum wells at atmospheric and high pressure. A model will be developed to evaluate the effect of pressure on the relaxation of carriers in the InGaP based multiple quantum wells. The study of the subpicosecond dynamics of semiconductors at high pressure is an area that has so far not been explored and likely to contribute important information on these materials. A detailed proposal will be submitted to NSF Research Initiation Award Program at the completion of the proposed preliminary studies.