RUI: Physical Deposition Mechanisms of Electroless Copper for Multi-level Interconnects

微电子加工中的最新技术发展表明，化学沉积铜（Cu）是铝（Al）合金的可行替代品，可用作大规模和超大规模集成电路的互连材料。 大多数关于这种材料的研究都集中在化学沉积Cu膜的电性能上。 该项目使用原子力显微镜原位研究薄膜的物理沉积机制（成核和生长）。 扫描隧道显微镜和掠入射x射线衍射将提供额外的晶体学信息。 还将评估膜的电性能。 通过这项研究，我们将深入了解沉积条件和所得的显微组织和性能之间的关系。 对化学沉积Cu的物理沉积机理的更深入理解将允许更好地控制沉积过程和膜性质。 ***

9322083 Vanasupa Recent technological developments in microelectronic processing demonstrate that electrolessly deposited copper(Cu) is a viable replacement for aluminum (A1) alloys as an interconnect material for large scale and ultra-large scale integrated circuits. Most of the studies concerning this material have focused on the resulting electrical properties of electrolessly deposited Cu films. This project uses atomic force microscopy to study the physical deposition mechanisms (nucleation and growth) of the films in situ. Scanning tunneling microscopy and grazing incidence x-ray diffraction will provide additional crystallographic information. The electrical performance of the films will also be evaluated. Through this study we will gain insight into the relationship between the deposition conditions and the resulting microstructure and properties. A greater understanding of the physical deposition mechanism of the electrolessly deposited Cu will allow better control of the deposition process and the film properties. ***