RUI: Physical Deposition Mechanisms of Electroless Copper for Multi-level Interconnects

RUI：多层互连化学镀铜的物理沉积机制

• 批准号: 9322083
• 负责人: Linda Vanasupa
• 金额: $ 18.04万
• 依托单位: California Polytechnic State University Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1997-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9322083&HistoricalAwards=false
• 关键词: RUI; Physical; Deposition; Mechanisms; Electroless

9322083 Vanasupa Recent technological developments in microelectronic processing demonstrate that electrolessly deposited copper(Cu) is a viable replacement for aluminum (A1) alloys as an interconnect material for large scale and ultra-large scale integrated circuits. Most of the studies concerning this material have focused on the resulting electrical properties of electrolessly deposited Cu films. This project uses atomic force microscopy to study the physical deposition mechanisms (nucleation and growth) of the films in situ. Scanning tunneling microscopy and grazing incidence x-ray diffraction will provide additional crystallographic information. The electrical performance of the films will also be evaluated. Through this study we will gain insight into the relationship between the deposition conditions and the resulting microstructure and properties. A greater understanding of the physical deposition mechanism of the electrolessly deposited Cu will allow better control of the deposition process and the film properties. ***

最近微电子加工技术的发展表明，化学沉积铜（Cu）是铝（A1）合金的可行替代品，可作为大规模和超大规模集成电路的互连材料。大多数关于这种材料的研究都集中在化学沉积Cu薄膜的电学性质上。本项目利用原子力显微镜研究薄膜在原位的物理沉积机制（成核和生长）。扫描隧道显微镜和掠入射x射线衍射将提供额外的晶体学信息。薄膜的电气性能也将被评估。通过这项研究，我们将深入了解沉积条件与所得微观结构和性能之间的关系。更好地了解化学沉积Cu的物理沉积机制将有助于更好地控制沉积过程和薄膜性能。＊＊＊