GOALI: ELECTROMIGRATION STUDIES OF ELECTROLESS CU ON SUB-QUARTER-MICRON TEST STRUCTURES

目标：亚四分之一微米测试结构上无电镀铜的电迁移研究

• 批准号: 9709447
• 负责人: Linda Vanasupa
• 金额: $ 5.03万
• 依托单位: California Polytechnic State University Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9709447&HistoricalAwards=false
• 关键词: GOALI; ELECTROMIGRATION; STUDIES; ELECTROLESS; CU

9709447 Vanasupa The microelectronics industry is currently undergoing a revolution in the technology and material employed to connect individual devices in an integrated circuit (interconnects). It appears that metallizations based on copper will likely replace the aluminum metallizations whose use has dominated the silicon microelectronics industry for decades. Copper offers a lower resistivity as well as a higher resistance to diffusional transport under the influence of high current densities (electromigration). At this point, many of the issues associated with converting to copper metallization have been addressed. With the trend for eversmaller circuits, however, the microelectronics industry is likely to find themselves faced with the same limiting factor currently plaguing the use of aluminum-based metallization: electromigration. The objective of this research is to identify the parameters that are important to preventing electromigration of copper-based metallization in integrated circuits. The objectives will be accomplished by generating a matrix of test samples composed of multiple levels of copper interconnects using an electrochemical process to deposit the copper. The copper deposition parameters will serve as a variable in the experiments since they strongly influence microstructural features of the copper. Samples will be packaged in ceramic daul in-line packages to simulate the operating environment of actual integrated circuits. Electromigration tests will be performed at elevated temperatures until the samples fail. Technics such as focused ion beam microscopy, scanning electron microscopy, secondary ion mass spectrometry and grazing incidence x-ray diffraction will be used to characterize and identify the source of the electromigration failures. ***

9709447 Vanasupa微电子工业目前正在经历一场用于连接集成电路中各个器件（互连）的技术和材料的革命。 基于铜的金属化似乎将可能取代铝金属化，铝金属化在硅微电子工业中的应用已经主导了几十年。 铜提供较低的电阻率以及在高电流密度（电迁移）的影响下对扩散传输的较高阻力。 在这一点上，许多与转换为铜金属化相关的问题已经得到解决。 然而，随着电路越来越小的趋势，微电子工业可能会发现自己面临着目前阻碍铝基金属化使用的相同限制因素：电迁移。 本研究的目的是确定的参数是重要的，以防止集成电路中的铜基金属化的电迁移。 这些目标将通过使用电化学过程产生由多层铜互连组成的测试样品矩阵来实现，以存款铜。 铜沉积参数将作为实验中的变量，因为它们强烈影响铜的微观结构特征。 样品将封装在陶瓷双列直插式封装中，以模拟实际集成电路的工作环境。 将在高温下进行电迁移测试，直至样品失效。聚焦离子束显微镜、扫描电子显微镜、二次离子质谱仪和掠入射X射线衍射等技术将用于表征和确定电迁移故障的来源。 ***