NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
NSF/ONR:高温超导薄膜和异质结构界面的生长
基本信息
- 批准号:9422182
- 负责人:
- 金额:$ 24.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1995
- 资助国家:美国
- 起止时间:1995-04-01 至 1998-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9422182 Irene The principal scientific objective of the research is to elucidate the mechanisms of deposition, film formation and interface reactions for high temperature superconductor films and heterostructures. In order to accomplish this objective two complimentary techniques, namely time of flight ion scattering and recoil spectroscopy and spectroscopic ellipsometry will be used for in-situ real time analysis of the film formation and interactions of the high temperature superconductor films and heterostructures. It is anticipated that this research program will not only produce considerable information about the formation and interface reactions of high temperature superconductor and ferroelectric films and heterostructures, but also the knowledge necessary to implement a fully integrated time of flight ion scattering and recoil spectroscopy, spectroscopic ellipsometry, ion beam sputter-deposition system for the preparation of these complex materials and structures.
9422182艾琳这项研究的主要科学目标是阐明高温超导薄膜和异质结构的沉积、成膜和界面反应的机制。为了实现这一目标,将使用两种互补的技术,即飞行时间离子散射和反冲光谱以及椭圆偏振光谱,对高温超导薄膜和异质结构的成膜和相互作用进行原位实时分析。预计这一研究计划不仅将产生大量关于高温超导体、铁电薄膜和异质结构的形成和界面反应的信息,而且还将产生必要的知识,以实现完全集成的飞行时间离子散射和反冲光谱、椭圆偏振光谱、离子束溅射沉积系统来制备这些复杂的材料和结构。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Eugene Irene其他文献
Eugene Irene的其他文献
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{{ truncateString('Eugene Irene', 18)}}的其他基金
Inorganic and Organic Thin Film and Interface Studies
无机和有机薄膜和界面研究
- 批准号:
0405326 - 财政年份:2004
- 资助金额:
$ 24.6万 - 项目类别:
Continuing Grant
Inorganic and Organic Thin Film Interface Studies
无机和有机薄膜界面研究
- 批准号:
0101231 - 财政年份:2001
- 资助金额:
$ 24.6万 - 项目类别:
Continuing Grant
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
GOALI:复合氧化物薄膜过程和界面的原位实时研究
- 批准号:
9986682 - 财政年份:2000
- 资助金额:
$ 24.6万 - 项目类别:
Standard Grant
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
高能工艺条件下的薄膜生长、沉积和界面研究
- 批准号:
9633731 - 财政年份:1997
- 资助金额:
$ 24.6万 - 项目类别:
Continuing Grant
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
美法合作研究:微电子材料制备中的等离子体工艺
- 批准号:
9115805 - 财政年份:1992
- 资助金额:
$ 24.6万 - 项目类别:
Standard Grant
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
高能条件下的薄膜生长和沉积研究:离子束和电子回旋共振等离子体
- 批准号:
9200723 - 财政年份:1992
- 资助金额:
$ 24.6万 - 项目类别:
Continuing Grant
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