NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
批准号:
9422182
负责人:
Eugene Irene
金额:
$24.6万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-04-01 至 1998-09-30
中文摘要
小行星9422182 研究的主要科学目标是阐明高温超导薄膜和异质结构的沉积、成膜和界面反应的机理。 为了实现这一目标,两个互补的技术,即飞行时间离子散射和反冲光谱和光谱椭圆偏振法将用于原位真实的时间分析的高温超导膜和异质结构的膜的形成和相互作用。 预计这项研究计划不仅将产生大量关于高温超导体和铁电薄膜和异质结构的形成和界面反应的信息,而且还将产生实现完全集成的飞行时间离子散射和反冲光谱,光谱椭圆偏振,离子束溅射-沉积系统用于制备这些复杂的材料和结构。
英文摘要
9422182 Irene The principal scientific objective of the research is to elucidate the mechanisms of deposition, film formation and interface reactions for high temperature superconductor films and heterostructures. In order to accomplish this objective two complimentary techniques, namely time of flight ion scattering and recoil spectroscopy and spectroscopic ellipsometry will be used for in-situ real time analysis of the film formation and interactions of the high temperature superconductor films and heterostructures. It is anticipated that this research program will not only produce considerable information about the formation and interface reactions of high temperature superconductor and ferroelectric films and heterostructures, but also the knowledge necessary to implement a fully integrated time of flight ion scattering and recoil spectroscopy, spectroscopic ellipsometry, ion beam sputter-deposition system for the preparation of these complex materials and structures.
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会议论文
Inorganic and Organic Thin Film and Interface Studies
-
批准号:0405326
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项目类别:Continuing Grant
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资助金额:$35.73万
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财政年份:2004
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负责人:Eugene Irene
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依托单位:
Inorganic and Organic Thin Film Interface Studies
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批准号:0101231
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项目类别:Continuing Grant
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资助金额:$31.54万
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财政年份:2001
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负责人:Eugene Irene
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依托单位:
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
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批准号:9986682
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项目类别:Standard Grant
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资助金额:$41.94万
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财政年份:2000
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负责人:Eugene Irene
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依托单位:
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
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批准号:9633731
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项目类别:Continuing Grant
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资助金额:$29.83万
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财政年份:1997
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负责人:Eugene Irene
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依托单位:
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
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批准号:9115805
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项目类别:Standard Grant
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资助金额:$1.48万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
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批准号:9200723
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项目类别:Continuing Grant
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资助金额:$22.5万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
海外基金