Inorganic and Organic Thin Film Interface Studies

无机和有机薄膜界面研究

• 批准号: 0101231
• 负责人: Eugene Irene
• 金额: $ 31.54万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-03-01 至 2004-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0101231&HistoricalAwards=false
• 关键词: Inorganic; Organic; Thin; Film; Interface

This project addresses inorganic and organic interfaces composed of inorganic films resulting from key microelectronics reactions of oxidation and nitridation of Si (SiO2 and Si3N4 and SiOxNy) and organic polymer films (poly o-methoxyaniline (POMA), poly p-phenylenevinylene (PPV) and the hererocyclic polypyrrole and derivatives that have interesting electronic and optical properties with semiconductors (Si, Ge and GaAs) metals (Au, Al, Ir, ITO) and insulators (SiO2 and Si3N4). The fundamental materials science aim is to understand the nature and extent of interface reactions. The key research strategy is to follow the evolution of interface formation in real time. The approach is to use in situ real-time ellipsometry along with in situ real-time characterization methodologies in a configuration that can provide interface and film formation dynamics, chemical composition, and structure and optical properties. Additional interface sensitive characterization techniques include: spectroscopic immersion ellipsometry, Fractal analysis, and Fowler-Nordheim tunnel current oscillations. Interface and thin film preparation processes include: thermal (rapid and conventional), electron cyclotron resonance (ECR) plasma and ion sputtering for inorganic interfaces and chemical and electrochemical solution methods for organic films. Interface reaction models to be used for ellipsometric data analysis can be compared in both the inorganic and organic materials systems. In both systems metal oxide/insulator semiconductor (MOS) devices can be used as electronics properties test vehicles with similar electronics characterizations. Comparisons that are not usually made are a feature of the approach. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. These studies will improve the fundamental understanding of dissimilar materials interfaces, which are key to advanced microelectronics and photonics. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

本计画主要研究矽之氧化及氮化等微电子反应所产生之无机薄膜所构成之无机及有机介面（SiO2和Si 3 N4和SiOxNy）和有机聚合物膜聚邻甲氧基苯胺（POMA）、聚对苯撑亚乙烯（PPV）和杂环聚吡咯及其衍生物具有与半导体相关的有趣的电子和光学性质（Si、Ge和GaAs）金属（Au、Al、Ir、ITO）和绝缘体（SiO2和Si 3 N4）。材料科学的基本目标是了解界面反应的性质和程度。关键的研究策略是在真实的时间内跟踪界面形成的演化。该方法是使用原位实时椭圆偏振法沿着与原位实时表征方法的配置，可以提供界面和薄膜形成动力学，化学成分，结构和光学性能。其他界面敏感的表征技术包括：光谱浸没椭圆偏振法，分形分析，和福勒-诺德海姆隧道电流振荡。界面和薄膜制备工艺包括：用于无机界面的热（快速和常规）、电子回旋共振（ECR）等离子体和离子溅射，以及用于有机薄膜的化学和电化学溶液方法。用于椭圆偏振数据分析的界面反应模型可以在无机和有机材料体系中进行比较。在这两种系统中，金属氧化物/绝缘体半导体（MOS）器件可以用作具有类似电子特性的电子特性测试工具。通常不进行的比较是这种方法的一个特点。该项目解决了材料科学领域的基础研究问题，具有高度的技术相关性。这些研究将提高对不同材料界面的基本理解，这是先进微电子学和光子学的关键。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***