Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions

该研究项目由电子材料和固态化学项目共同资助，旨在对GaAs和Ge单晶表面介电膜的ECR等离子沉积的基本理解取得重大进展。薄膜生长将通过光谱和单波长椭偏仪进行现场监测。具体目标包括通过检查从形成的界面衍生的MIS结的I-V行为来研究由沉积产生的半导体-介电界面的电子特性。此外，各种非原位表征工具，包括XPS， AFM和FTIR，将被用于获得沉积过程和基本结构-性能关系的详细信息。通用方法有望为创造环境稳定、无缺陷的锗和砷化镓表面终端提供新的基础信息和见解。该项目是多学科结合基础固体表面和界面化学和材料科学的合成和加工研究与先进的表征工具和分析方法，以解决在一个具有强技术相关性和高潜在回报的主题领域的前沿问题。这项研究将为先进的电子/光子器件和集成电路的几个方面提供基础的材料科学知识。此外，从本研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而为提高先进设备和电路的性能做出贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9633731 Irene This research project, co-funded by the Electronic Materials and Solid State Chemistry programs, aims for significant advancement in fundamental understanding of ECR plasma deposition of dielectric films on GaAs and Ge single crystal surfaces. Film growth will be monitored in situ by both spectroscopic and single wavelength ellipsometry. Specific goals include investigation of the electronic properties of the semiconductor-dielectric interfaces resulting from the deposition by examining the I-V behavior of MIS junctions derived from the interfaces formed. In addition, a variety of ex-situ characterization tools including XPS, AFM, and FTIR will be employed to gain detailed information on the deposition process and fundamental structure-property relationships. The general approach is expected to provide new fundamental information and insights into the creation of environmentally stable, defect-free terminations of Ge and GaAs surfaces. %%% The project is multidisciplinary combining fundamental solid state surface and interface chemistry and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***