Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions

9633731艾琳这个研究项目，共同资助的电子材料和固态化学程序，旨在显着进步的基本理解ECR等离子体沉积介质膜的GaAs和Ge单晶表面。薄膜生长将监测原位光谱和单波长椭圆偏振。 具体的目标包括调查的电子性质的半导体介电界面的沉积所产生的通过检查的I-V行为的MIS结来自形成的接口。 此外，各种非原位表征工具，包括XPS，AFM和FTIR将被用来获得沉积过程和基本的结构-性能关系的详细信息。一般的方法，预计将提供新的基本信息和见解，创造环境稳定，无缺陷的终端Ge和GaAs表面。该项目是多学科的，结合了基本的固态表面和界面化学以及材料科学合成和加工研究，以及先进的表征工具和分析方法，以解决具有强大技术相关性和高潜在回报的热门领域的前沿问题。 该研究将为先进电子/光子器件和集成电路的几个方面提供基础材料科学知识。 此外，从该研究项目中获得的知识和理解预计将通过提供设计和生产改进材料和材料组合的基本理解和基础，以提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9633731 Irene This research project, co-funded by the Electronic Materials and Solid State Chemistry programs, aims for significant advancement in fundamental understanding of ECR plasma deposition of dielectric films on GaAs and Ge single crystal surfaces. Film growth will be monitored in situ by both spectroscopic and single wavelength ellipsometry. Specific goals include investigation of the electronic properties of the semiconductor-dielectric interfaces resulting from the deposition by examining the I-V behavior of MIS junctions derived from the interfaces formed. In addition, a variety of ex-situ characterization tools including XPS, AFM, and FTIR will be employed to gain detailed information on the deposition process and fundamental structure-property relationships. The general approach is expected to provide new fundamental information and insights into the creation of environmentally stable, defect-free terminations of Ge and GaAs surfaces. %%% The project is multidisciplinary combining fundamental solid state surface and interface chemistry and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***