GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
GOALI:复合氧化物薄膜过程和界面的原位实时研究
基本信息
- 批准号:9986682
- 负责人:
- 金额:$ 41.94万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2000
- 资助国家:美国
- 起止时间:2000-03-01 至 2003-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This GOALI project focuses on in-situ, real-time studies of complex oxide thin film composition, structure, and properties to be used to optimize film quality and to develop film formation models that optimize desired film properties. A unique process and characterization system combining spectroscopic ellipsometry and low energy ion scattering, together with a multi target ion beam sputter deposition system for film growth is being completed. This GOALI project involving systems development requires not only the diverse scientific talents provided by the University of North Carolina and James Madison University (an undergraduate institution) and Argonne National laboratories, but also industrial participation for the industrial hardware implementation phase.Oxide films with both complex compositions and structures are being considered for the next generation electronic and optical devices. Among the classes materials currently being emphasized are highly optimized thin films of superconductors, high dielectric constant dielectrics, ferroelectrics and piezoelectrics. Training students for job opportunities in these areas is regarded as a high priority by industry.
该项目专注于现场实时研究复合氧化物薄膜的成分、结构和性能,用于优化薄膜质量并开发优化所需薄膜性能的成膜模型。一套结合椭圆偏振光谱和低能离子散射的独特工艺和表征系统,以及用于薄膜生长的多靶离子束溅射沉积系统正在完成。这个涉及系统开发的目标项目不仅需要北卡罗来纳大学和詹姆斯·麦迪逊大学(本科院校)和阿贡国家实验室提供的各种科学人才,还需要工业硬件实施阶段的产业界参与。下一代电子和光学器件正在考虑使用成分和结构复杂的氧化物薄膜。目前正在强调的材料类别包括高度优化的超导体薄膜、高介电常数介质、铁电材料和压电材料。为这些领域的就业机会培训学生被工业界视为高度优先事项。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Eugene Irene其他文献
Eugene Irene的其他文献
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{{ truncateString('Eugene Irene', 18)}}的其他基金
Inorganic and Organic Thin Film and Interface Studies
无机和有机薄膜和界面研究
- 批准号:
0405326 - 财政年份:2004
- 资助金额:
$ 41.94万 - 项目类别:
Continuing Grant
Inorganic and Organic Thin Film Interface Studies
无机和有机薄膜界面研究
- 批准号:
0101231 - 财政年份:2001
- 资助金额:
$ 41.94万 - 项目类别:
Continuing Grant
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
高能工艺条件下的薄膜生长、沉积和界面研究
- 批准号:
9633731 - 财政年份:1997
- 资助金额:
$ 41.94万 - 项目类别:
Continuing Grant
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
NSF/ONR:高温超导薄膜和异质结构界面的生长
- 批准号:
9422182 - 财政年份:1995
- 资助金额:
$ 41.94万 - 项目类别:
Continuing Grant
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
美法合作研究:微电子材料制备中的等离子体工艺
- 批准号:
9115805 - 财政年份:1992
- 资助金额:
$ 41.94万 - 项目类别:
Standard Grant
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
高能条件下的薄膜生长和沉积研究:离子束和电子回旋共振等离子体
- 批准号:
9200723 - 财政年份:1992
- 资助金额:
$ 41.94万 - 项目类别:
Continuing Grant
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