GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
批准号:
9986682
负责人:
Eugene Irene
金额:
$41.94万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-03-01 至 2003-02-28
中文摘要
该项目专注于现场实时研究复合氧化物薄膜的成分、结构和性能,用于优化薄膜质量并开发优化所需薄膜性能的成膜模型。一套结合椭圆偏振光谱和低能离子散射的独特工艺和表征系统,以及用于薄膜生长的多靶离子束溅射沉积系统正在完成。这个涉及系统开发的目标项目不仅需要北卡罗来纳大学和詹姆斯·麦迪逊大学(本科院校)和阿贡国家实验室提供的各种科学人才,还需要工业硬件实施阶段的产业界参与。下一代电子和光学器件正在考虑使用成分和结构复杂的氧化物薄膜。目前正在强调的材料类别包括高度优化的超导体薄膜、高介电常数介质、铁电材料和压电材料。为这些领域的就业机会培训学生被工业界视为高度优先事项。
英文摘要
This GOALI project focuses on in-situ, real-time studies of complex oxide thin film composition, structure, and properties to be used to optimize film quality and to develop film formation models that optimize desired film properties. A unique process and characterization system combining spectroscopic ellipsometry and low energy ion scattering, together with a multi target ion beam sputter deposition system for film growth is being completed. This GOALI project involving systems development requires not only the diverse scientific talents provided by the University of North Carolina and James Madison University (an undergraduate institution) and Argonne National laboratories, but also industrial participation for the industrial hardware implementation phase.Oxide films with both complex compositions and structures are being considered for the next generation electronic and optical devices. Among the classes materials currently being emphasized are highly optimized thin films of superconductors, high dielectric constant dielectrics, ferroelectrics and piezoelectrics. Training students for job opportunities in these areas is regarded as a high priority by industry.
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Inorganic and Organic Thin Film and Interface Studies
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批准号:0405326
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项目类别:Continuing Grant
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资助金额:$35.73万
-
财政年份:2004
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负责人:Eugene Irene
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依托单位:
Inorganic and Organic Thin Film Interface Studies
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批准号:0101231
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项目类别:Continuing Grant
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资助金额:$31.54万
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财政年份:2001
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负责人:Eugene Irene
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依托单位:
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
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批准号:9633731
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项目类别:Continuing Grant
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资助金额:$29.83万
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财政年份:1997
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负责人:Eugene Irene
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依托单位:
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
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批准号:9422182
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项目类别:Continuing Grant
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资助金额:$24.6万
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财政年份:1995
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负责人:Eugene Irene
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依托单位:
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
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批准号:9115805
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项目类别:Standard Grant
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资助金额:$1.48万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
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批准号:9200723
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项目类别:Continuing Grant
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资助金额:$22.5万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
国内基金
海外基金
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