Inorganic and Organic Thin Film and Interface Studies
无机和有机薄膜和界面研究
基本信息
- 批准号:0405326
- 负责人:
- 金额:$ 35.73万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2004
- 资助国家:美国
- 起止时间:2004-07-01 至 2008-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project embodies a fundamental materials science study of inorganic and organic interfaces that have technological significance in electronics/photonics. Building on results of previous studies that focused on key microelectronics reactions of oxidation and nitridation of Si and the organic polymer film poly o-methoxyaniline (POMA) on SiO2 covered Si, this research is extended to include complex inorganic oxide interfaces that have relevance for high dielectric constant (K) insulators, and for ferroelectrics and piezoelectrics, and to combine selected organic films that are p-type semiconductors with stable n-type organic semiconductors to fabricate and characterize prototype device structures made from novel interfaces. The fundamental materials science issue is to understand the nature and extent of interface reactions and then to assess the impact of the chemical/physical nature of the interface with resultant interfacial electronic properties as determined from well-characterized interfaces. The research strategy is to follow the evolution of interface formation in real time via in situ real-time ellipsometry as well as other situ real-time characterization methodologies to provide assessments of chemical composition, structure and optical properties. Interface sensitive characterization techniques such as spectroscopic immersion ellipsometry, fractal analysis, and Fowler-Nordheim tunnel current oscillations will be included. Several interface and thin film preparation processes will be utilized: thermal, and ion sputtering for inorganic interfaces and chemical and electrochemical solution methods for organic films. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. The research topic, specifically interfaces formed with high dielectric constant and ferroelectric materials, and the emerging field of organic electronic materials is critical to future progress in nanoscale electronics. An important feature of the project is the integration of research and education through the training of students in a fundamentally and technologically significant area. This research activity provides training of graduate and undergraduate students and post doctorals in an industrially relevant area of research. The research is collaborative with participants that include university students from the University of North Carolina and James Madison University (Prof. B. Augustine with an ROA), national laboratory collaborator (Dr. O. Auciello at ANL), and a small business owner (Dr. A. Schultz of Ionwerks Inc.). Participants share their differing perspectives, students get experience in different professional environments, and research results can be readily implemented in industry and government. Students will also be able to participate in research conducted in the new National Center for Nanomaterials (CNM) in progress at ANL. The PI has successfully recruited and graduated students from underrepresented groups, and will continue to do so. It is anticipated that all participating students will have made presentations at international meetings during their degree time and will have published several papers in refereed international journals.***
该项目体现了对电子/光子学具有技术意义的无机和有机界面的基础材料科学研究。基于先前研究的结果,这些研究集中在Si的氧化和氮化的关键微电子反应以及SiO2覆盖的Si上的有机聚合物膜聚邻甲氧基苯胺(POMA),本研究扩展到包括与高介电常数(K)绝缘体相关的复杂无机氧化物界面,以及铁电体和压电体,并将所选的p型半导体有机膜与稳定的n型有机半导体进行联合收割机,以制造和表征由新型界面制成的原型器件结构。基本的材料科学问题是了解界面反应的性质和程度,然后评估界面的化学/物理性质与所得界面电子性质的影响,如从良好表征的界面确定的。研究策略是通过原位实时椭圆偏振法以及其他原位实时表征方法来跟踪真实的界面形成的演变,以提供化学成分,结构和光学性质的评估。界面敏感的表征技术,如光谱浸没椭圆偏振,分形分析,和福勒Nordheim隧道电流振荡将包括在内。几个接口和薄膜的制备过程将利用:热,离子溅射无机界面和化学和电化学溶液的方法为有机薄膜。该项目解决了材料科学领域的基础研究问题,具有高度的技术相关性。研究课题,特别是与高介电常数和铁电材料形成的界面,以及有机电子材料的新兴领域,对纳米电子学的未来发展至关重要。该项目的一个重要特点是通过在一个基础和技术重要领域培训学生,将研究和教育结合起来。这项研究活动提供了研究生和本科生和博士后在工业相关的研究领域的培训。这项研究的参与者包括来自北卡罗来纳州大学和詹姆斯麦迪逊大学的大学生(B教授)。奥古斯丁与罗阿),国家实验室合作者(博士O。Auciello在ANL),和一个小企业主(博士A。Schultz of Ionwerks Inc.)。参与者分享他们不同的观点,学生在不同的专业环境中获得经验,研究成果可以很容易地在行业和政府中实施。学生还将能够参加在ANL正在进行的新的国家纳米材料中心(CNM)进行的研究。 PI已经成功地从代表性不足的群体中招募学生并使其毕业,并将继续这样做。预计所有参与的学生将在学位期间在国际会议上发表演讲,并将在国际期刊上发表多篇论文。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Eugene Irene的其他文献
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{{ truncateString('Eugene Irene', 18)}}的其他基金
Inorganic and Organic Thin Film Interface Studies
无机和有机薄膜界面研究
- 批准号:
0101231 - 财政年份:2001
- 资助金额:
$ 35.73万 - 项目类别:
Continuing Grant
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
GOALI:复合氧化物薄膜过程和界面的原位实时研究
- 批准号:
9986682 - 财政年份:2000
- 资助金额:
$ 35.73万 - 项目类别:
Standard Grant
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
高能工艺条件下的薄膜生长、沉积和界面研究
- 批准号:
9633731 - 财政年份:1997
- 资助金额:
$ 35.73万 - 项目类别:
Continuing Grant
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
NSF/ONR:高温超导薄膜和异质结构界面的生长
- 批准号:
9422182 - 财政年份:1995
- 资助金额:
$ 35.73万 - 项目类别:
Continuing Grant
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
美法合作研究:微电子材料制备中的等离子体工艺
- 批准号:
9115805 - 财政年份:1992
- 资助金额:
$ 35.73万 - 项目类别:
Standard Grant
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
高能条件下的薄膜生长和沉积研究:离子束和电子回旋共振等离子体
- 批准号:
9200723 - 财政年份:1992
- 资助金额:
$ 35.73万 - 项目类别:
Continuing Grant
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