Inorganic and Organic Thin Film and Interface Studies
Inorganic and Organic Thin Film and Interface Studies
批准号:
0405326
负责人:
Eugene Irene
金额:
$35.73万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2008-06-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
This project embodies a fundamental materials science study of inorganic and organic interfaces that have technological significance in electronics/photonics. Building on results of previous studies that focused on key microelectronics reactions of oxidation and nitridation of Si and the organic polymer film poly o-methoxyaniline (POMA) on SiO2 covered Si, this research is extended to include complex inorganic oxide interfaces that have relevance for high dielectric constant (K) insulators, and for ferroelectrics and piezoelectrics, and to combine selected organic films that are p-type semiconductors with stable n-type organic semiconductors to fabricate and characterize prototype device structures made from novel interfaces. The fundamental materials science issue is to understand the nature and extent of interface reactions and then to assess the impact of the chemical/physical nature of the interface with resultant interfacial electronic properties as determined from well-characterized interfaces. The research strategy is to follow the evolution of interface formation in real time via in situ real-time ellipsometry as well as other situ real-time characterization methodologies to provide assessments of chemical composition, structure and optical properties. Interface sensitive characterization techniques such as spectroscopic immersion ellipsometry, fractal analysis, and Fowler-Nordheim tunnel current oscillations will be included. Several interface and thin film preparation processes will be utilized: thermal, and ion sputtering for inorganic interfaces and chemical and electrochemical solution methods for organic films. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. The research topic, specifically interfaces formed with high dielectric constant and ferroelectric materials, and the emerging field of organic electronic materials is critical to future progress in nanoscale electronics. An important feature of the project is the integration of research and education through the training of students in a fundamentally and technologically significant area. This research activity provides training of graduate and undergraduate students and post doctorals in an industrially relevant area of research. The research is collaborative with participants that include university students from the University of North Carolina and James Madison University (Prof. B. Augustine with an ROA), national laboratory collaborator (Dr. O. Auciello at ANL), and a small business owner (Dr. A. Schultz of Ionwerks Inc.). Participants share their differing perspectives, students get experience in different professional environments, and research results can be readily implemented in industry and government. Students will also be able to participate in research conducted in the new National Center for Nanomaterials (CNM) in progress at ANL. The PI has successfully recruited and graduated students from underrepresented groups, and will continue to do so. It is anticipated that all participating students will have made presentations at international meetings during their degree time and will have published several papers in refereed international journals.***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Inorganic and Organic Thin Film Interface Studies
-
批准号:0101231
-
项目类别:Continuing Grant
-
资助金额:$31.54万
-
财政年份:2001
-
负责人:Eugene Irene
-
依托单位:
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
-
批准号:9986682
-
项目类别:Standard Grant
-
资助金额:$41.94万
-
财政年份:2000
-
负责人:Eugene Irene
-
依托单位:
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
-
批准号:9633731
-
项目类别:Continuing Grant
-
资助金额:$29.83万
-
财政年份:1997
-
负责人:Eugene Irene
-
依托单位:
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
-
批准号:9422182
-
项目类别:Continuing Grant
-
资助金额:$24.6万
-
财政年份:1995
-
负责人:Eugene Irene
-
依托单位:
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
-
批准号:9115805
-
项目类别:Standard Grant
-
资助金额:$1.48万
-
财政年份:1992
-
负责人:Eugene Irene
-
依托单位:
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
-
批准号:9200723
-
项目类别:Continuing Grant
-
资助金额:$22.5万
-
财政年份:1992
-
负责人:Eugene Irene
-
依托单位:
海外基金