Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas

本研究涉及初始膜的基本方面 形成机制从裸露的半导体表面到 在涉及离子的高能工艺条件下的完整薄膜 光束和等离子体。 该项目的主要特点是使用 在膜过程中操作的原位光谱椭圆偏振法 能够测量成核的形成过程 路径、衬底损伤和膜性质。 的影响 可以经济地确定许多工艺参数， 实验和薄膜工艺变化的相关性 形成动力学和所得膜性质可在 直接的方式。 将采用一种新颖的浸没式椭偏技术 以获得介电膜界面光学性质。 相关 并选择了众所周知的电子材料进行研究：Si， 具有生长和沉积的氧化物的Ge、InP和GaAs衬底， 氮化物。 这样，一般和有意义的基本 材料科学的关系将被揭示和模型， 膜形成发展。 %%% 本研究体现了过程中的原位材料诊断 半导体衬底高能成膜研究 工艺条件 我们的目标是阐明这部电影 形成机制从成核阶段向前， 将膜的形成与电子学性质相关联。 以这种方式 了解技术上重要的过程 将获得相关材料。

This research deals with the fundamental aspects of initial film formation mechanisms from a bare semiconductor surface to a complete thin film under energetic process conditions involving ion beams and plasmas. The key feature of the project is the use of in-situ spectroscopic ellipsometry operated during the film formation process which enables the measurement of nucleation pathways, substrate damage and film properties. The effects of many process parameters can be determined with an economy of experiments and the correlation of process variations on film formation kinetics and resulting film properties can be made in a direct way. A novel immersion ellipsometric technique will be used to access dielectric-film interface optical properties. Relevant and well known electronic materials are chosen for the study: Si, Ge, InP and GaAs substrates with grown and deposited oxides and nitrides. In this way, general and meaningful fundamental materials science relationships will be uncovered and models for film formation developed. %%% This research embodies in-situ materials diagnostics during process study of film formation on semiconductor substrates under energetic process conditions. The objective is to elucidate the film formation mechanisms from the nucleation stage forward and to correlate film formation with electronics properties. In this way an understanding of important processes for technologically relevant materials will be obtained.