Dynamics of Fundamental Optical Transitions in Gallium Nitride and Aluminum Gallium Nitride

氮化镓和氮化铝镓中基本光学跃迁的动力学

• 批准号: 9528226
• 负责人: Jingyu Lin
• 金额: $ 14.8万
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-05-15 至 2000-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9528226&HistoricalAwards=false
• 关键词: Dynamics; Fundamental; Optical; Transitions; Gallium

9528226 Lin This research project is targeted at the investigation of the dynamics of band-to-band exciton, and band-to-impurity transitions in GaN and AlGaN, including recombination lifetimes and quantum efficiencies, employing time-resolved photoluminescence spectroscopy measurements. These dynamic processes will be investigated in epitaxial layers, heterostructures, quantum wells, and artificially structured laser cavities under different conditions--temperature, excitation energy, intensity, and polarization. Fundamentally important physical quantities, including the free- and bound-exciton oscillator strengths which determine basic optical processes such as excitation, absorption, and recombination, will be measured. The effects of post-growth annealing, external fields, and alloy composition on the optical recombination dynamics will be included in the study. In addition, the dynamics of optical transitions will be investigated under conditions of optically-pumped stimulated emission and lasing to ascertain information regarding preferable optical transitions for laser applications as well as to provide model descriptions for gain mechanisms and quantum efficiencies in GaN lasers. %%% In wide bandgap semiconductor optical devices, such as UV emitters and UV-blue laser diodes, it is the dynamic processes of the fundamental optical transitions that predominantly determine their performance. The history of GaAs and ZnSe semiconductor laser development shows that understanding fundamental optical recombination dynamics is an important key to the understanding of laser activity. Additionally, an understanding of the dynamic processes of optical transitions provides new directions for improving material quality as well as being of great value in designing and optimizing optoelectronic devices. The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced photonics. Additionally, the knowledge and understandin g gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9528226 Lin本研究项目的目标是采用时间分辨光致发光光谱测量，研究GaN和AlGaN中带间激子和带间杂质跃迁的动力学，包括复合寿命和量子效率。这些动态过程将在外延层，异质结构，量子威尔斯，和人工结构的激光腔在不同的条件下进行研究-温度，激发能量，强度和偏振。从根本上重要的物理量，包括自由和束缚激子振子的强度，确定基本的光学过程，如激发，吸收和重组，将被测量。生长后退火，外部场，和合金成分的光学复合动力学的影响将包括在研究中。 此外，光学跃迁的动力学将在光泵浦受激发射和激光条件下进行研究，以确定有关激光应用的优选光学跃迁的信息，并为GaN激光器的增益机制和量子效率提供模型描述。%在宽带隙半导体光学器件中，例如UV发射器和UV-蓝光激光二极管，主要决定其性能的是基本光学跃迁的动态过程。GaAs和ZnSe半导体激光器的发展历史表明，理解基本的光学复合动力学是理解激光活性的重要关键。 此外，光学跃迁的动态过程的理解提供了新的方向，以提高材料质量，以及在设计和优化光电器件的巨大价值。该研究将在先进光子学的几个方面的技术相关性的基础水平上贡献基础材料科学知识。 此外，从本研究项目中获得的知识和理解有望通过提供基本的理解和基础来设计和生产改进的材料，从而在总体上有助于提高用于计算、信息处理和电信的先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***