Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications
Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications
批准号:
1206652
负责人:
Jingyu Lin
金额:
$45.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-05-01 至 2015-10-31
中文摘要
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英文摘要
Technical Description: This research project is to investigate layer-structured (BN)x(C2)1-x semiconductor alloys with an emphasis on materials growth by metal organic chemical vapor deposition, basic material properties studies, and exploration of potential applications. (BN)x(C2)1-x semiconductor alloys represent a unique material system for exploring the evolution of optical properties from far infrared to deep ultraviolet and transport properties from insulator to semi-metal in the same crystal structure. Research tasks include the probe of fundamental optical and electrical properties such as the energy bandgap and its variation with temperature and alloy composition, free, bound, and localized exciton transitions, impurity energy levels, feasibility of n- and p-type conductivity control, and carrier transport properties.Non-technical Description: The project trains postdoctoral researchers, graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. (BN)x(C2)1-x material system has the potential to complement nitride wide-bandgap semiconductors and carbon based nanostructured materials and enable the realization of chip-scale multi-spectral light sources and detectors and full spectral multi-junction solar cells. Ultimately, the materials developed could have a major impact on energy, medical, security, and communication.
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New Design and Manufacture Technologies for High-Performance Millimetre-Wave and Terahertz Waveguide Devices for Space and Terrestrial Communications
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批准号:EP/Y016580/1
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项目类别:Fellowship
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资助金额:$23.84万
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财政年份:2023
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负责人:Jingyu Lin
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依托单位:
Exploiting Novel Device Structures for Deep Ultraviolet Emitters
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批准号:1402886
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项目类别:Standard Grant
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资助金额:$32.49万
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财政年份:2014
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负责人:Jingyu Lin
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依托单位:
Bridging the Miscibility Gap in InGaN Alloys
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批准号:0906879
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项目类别:Standard Grant
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资助金额:$47.52万
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财政年份:2009
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负责人:Jingyu Lin
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依托单位:
III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications
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批准号:0504601
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Jingyu Lin
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依托单位:
Nitride Quantum Wells and Photonic Structures - Growth, Optical Studies, and Applications
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批准号:0203373
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项目类别:Continuing Grant
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资助金额:$49.19万
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财政年份:2002
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负责人:Jingyu Lin
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依托单位:
Mechanisms of Optical Transitions in AlGaN Alloys and GaN/Al GaN Quantum Wells
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批准号:9902431
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项目类别:Continuing Grant
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资助金额:$42.2万
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财政年份:1999
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负责人:Jingyu Lin
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依托单位:
Dynamics of Fundamental Optical Transitions in Gallium Nitride and Aluminum Gallium Nitride
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批准号:9528226
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项目类别:Continuing Grant
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资助金额:$14.8万
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财政年份:1996
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负责人:Jingyu Lin
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依托单位:
Nature of Quantum Localization Probed by Exciton Dynamics in II-VI Semiconductor Alloys
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批准号:9408816
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项目类别:Standard Grant
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资助金额:$5.5万
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财政年份:1994
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负责人:Jingyu Lin
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依托单位:
海外基金