Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications

层状结构半导体合金:生长、表征和应用

基本信息

  • 批准号:
    1206652
  • 负责人:
  • 金额:
    $ 45万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2012
  • 资助国家:
    美国
  • 起止时间:
    2012-05-01 至 2015-10-31
  • 项目状态:
    已结题

项目摘要

Technical Description: This research project is to investigate layer-structured (BN)x(C2)1-x semiconductor alloys with an emphasis on materials growth by metal organic chemical vapor deposition, basic material properties studies, and exploration of potential applications. (BN)x(C2)1-x semiconductor alloys represent a unique material system for exploring the evolution of optical properties from far infrared to deep ultraviolet and transport properties from insulator to semi-metal in the same crystal structure. Research tasks include the probe of fundamental optical and electrical properties such as the energy bandgap and its variation with temperature and alloy composition, free, bound, and localized exciton transitions, impurity energy levels, feasibility of n- and p-type conductivity control, and carrier transport properties.Non-technical Description: The project trains postdoctoral researchers, graduate and undergraduate students in the areas of novel materials growth, characterization, nano-fabrication techniques and material/device processing using the state-of-the-art facilities. (BN)x(C2)1-x material system has the potential to complement nitride wide-bandgap semiconductors and carbon based nanostructured materials and enable the realization of chip-scale multi-spectral light sources and detectors and full spectral multi-junction solar cells. Ultimately, the materials developed could have a major impact on energy, medical, security, and communication.
技术描述:本研究项目是研究层结构(BN)x(C2)1-x半导体合金,重点是金属有机化学气相沉积材料生长,基本材料性能研究,以及潜在应用的探索。(BN)x(C2)1-x半导体合金代表了一种独特的材料体系,用于探索从远红外到深紫外光的光学性质的演变,以及在相同的晶体结构中从绝缘体到半金属的传输性质。研究任务包括探测基本的光学和电学性质,如能带隙及其随温度和合金成分的变化,自由、束缚和局域激子跃迁,杂质能级,n型和p型电导控制的可行性,以及载流子传输特性。非技术描述:该项目利用最先进的设备在新材料生长、表征、纳米制造技术和材料/器件加工领域培训博士后研究人员、研究生和本科生。(BN)x(C2)1-x材料体系具有补充氮化物宽带隙半导体和碳基纳米结构材料的潜力,能够实现芯片级的多光谱光源和探测器以及全光谱多结太阳能电池。最终,所开发的材料可能会对能源、医疗、安全和通信产生重大影响。

项目成果

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会议论文数量(0)
专利数量(0)

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Jingyu Lin其他文献

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping
980 nm光泵浦下掺铒GaN波导的激发截面
  • DOI:
    10.1063/1.4892427
  • 发表时间:
    2014
  • 期刊:
  • 影响因子:
    4
  • 作者:
    R. Hui;Ruxin Xie;I. Feng;Z. Sun;Jingyu Lin;Hongxing Jiang
  • 通讯作者:
    Hongxing Jiang
Notice of RetractionCitizens' communal coping strategies to unfairness in public administration domain: The effects of gender, education and trust in government
撤回通知公民对公共行政领域不公平现象的共同应对策略:性别、教育和对政府信任的影响
Babe: An Experience Sharing Design for Enhancing Fatherhood During Pregnancy
Babe:孕期增强父爱的经验分享设计
  • DOI:
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jingyu Lin;D. Chang
  • 通讯作者:
    D. Chang
Comment on “Spectral identification of thin film coated and solid form semiconductor neutron detectors” by McGregor and Shultis
对 McGregor 和 Shultis 的“薄膜涂层和固体半导体中子探测器的光谱识别”的评论
  • DOI:
    10.1016/j.nima.2004.07.210
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Hallbeck;A. Caruso;S. Adenwalla;J. I. Brand;D. Byun;Hualiang Jiang;Jingyu Lin;Y. Losovyj;C. Lundstedt;D. Mcilroy;W. Pitts;B. Robertson;P. Dowben
  • 通讯作者:
    P. Dowben
Helium isotopes in hot springs of the Karakorum fault and the Central Pamir: Tracing mantle contributions and tectonic dynamics
喀喇昆仑断裂带和帕米尔中部温泉中的氦同位素:示踪地幔贡献与构造动力学
  • DOI:
    10.1016/j.gloplacha.2025.104897
  • 发表时间:
    2025-10-01
  • 期刊:
  • 影响因子:
    4.000
  • 作者:
    Shuai Wang;Shihua Qi;Xuelian Huang;Boyuan Zhao;Feng Chen;Genyi He;Sijia Wang;Jingyu Lin
  • 通讯作者:
    Jingyu Lin

Jingyu Lin的其他文献

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{{ truncateString('Jingyu Lin', 18)}}的其他基金

New Design and Manufacture Technologies for High-Performance Millimetre-Wave and Terahertz Waveguide Devices for Space and Terrestrial Communications
用于空间和地面通信的高性能毫米波和太赫兹波导器件的新设计和制造技术
  • 批准号:
    EP/Y016580/1
  • 财政年份:
    2023
  • 资助金额:
    $ 45万
  • 项目类别:
    Fellowship
Exploiting Novel Device Structures for Deep Ultraviolet Emitters
利用深紫外发射器的新型器件结构
  • 批准号:
    1402886
  • 财政年份:
    2014
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Bridging the Miscibility Gap in InGaN Alloys
缩小 InGaN 合金的混溶性差距
  • 批准号:
    0906879
  • 财政年份:
    2009
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications
III 氮化物深紫外光子材料和结构 - 生长、光学研究和应用
  • 批准号:
    0504601
  • 财政年份:
    2005
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
Nitride Quantum Wells and Photonic Structures - Growth, Optical Studies, and Applications
氮化物量子阱和光子结构 - 生长、光学研究和应用
  • 批准号:
    0203373
  • 财政年份:
    2002
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
Mechanisms of Optical Transitions in AlGaN Alloys and GaN/Al GaN Quantum Wells
AlGaN 合金和 GaN/Al GaN 量子阱中的光学跃迁机制
  • 批准号:
    9902431
  • 财政年份:
    1999
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
Dynamics of Fundamental Optical Transitions in Gallium Nitride and Aluminum Gallium Nitride
氮化镓和氮化铝镓中基本光学跃迁的动力学
  • 批准号:
    9528226
  • 财政年份:
    1996
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
Nature of Quantum Localization Probed by Exciton Dynamics in II-VI Semiconductor Alloys
II-VI 半导体合金中激子动力学探测量子局域化的本质
  • 批准号:
    9408816
  • 财政年份:
    1994
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant

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