Mechanisms of Optical Transitions in AlGaN Alloys and GaN/Al GaN Quantum Wells
AlGaN 合金和 GaN/Al GaN 量子阱中的光学跃迁机制
基本信息
- 批准号:9902431
- 负责人:
- 金额:$ 42.2万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1999
- 资助国家:美国
- 起止时间:1999-06-01 至 2003-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project addresses optical transitions and carrier dynamics in GaN/AlGaN quantum well (QW) structures; mechanisms of optical transitions in AlGaN epilayers with high AlN mole fractions; and effects of reduced volume and optical confinement on the optical and optoelectronic properties of GaN microstructures including micro-disks, prisms, and pyramids. Picosecond time-resolved photoluminescence will be used to study the mechanisms of optical transitions in a variety of III-nitride samples and structures, and, in conjunction with additional characterization techniques, to provide information on sample crystalline quality, purity, alloy composition, and quantum well interface properties. Emphasis will be placed on AlGaN with high AlN mole fractions. Additionally, since many III-nitride based applications take advantage of heterojunctions and multiple quantum wells (MQW), AlGaN/GaN and AlxGa(1-x)N/AlyGa(1-y)N(y x) heterojunction and MQW structures and the tunability of the bandgap in the alloys from GaN (Eg=3.4 eV ) to A1N (Eg=6.2 eV) will be explored for achieving greater understanding of fundamental deep ultraviolet (UV) optoelectronic phenomena associated with these materials. Materials synthesized by both MBE and MOCVD will be studied. Research efforts will address properties which affect selective and lateral growth including crystallographic orientation as well as buffer layers. Quantum well thickness, doping concentration in the barrier layers, alloy composition in the AlGaN layers, and post-growth processing conditions will be studied to assess n- and p- type doping in AlGaN alloys, defect energy levels, self-compensation, and the formation of deep level impurities in AlGaN. Structural characterization includes TEM, AFM, SEM and X-ray analyses; SIMS, optical spectroscopy, and Hall effect measurements will be used to assess compositional and electrical properties.%%%
本项目研究GaN/AlGaN量子阱(QW)结构中的光学跃迁和载流子动力学;高AlN摩尔分数AlGaN涂层的光学跃迁机理以及体积减小和光约束对GaN微结构(包括微盘、棱镜和金字塔)光学和光电子特性的影响。皮秒时间分辨光致发光将用于研究各种iii -氮化物样品和结构中的光学跃迁机制,并与其他表征技术相结合,提供样品晶体质量、纯度、合金成分和量子阱界面特性的信息。重点将放在高AlN摩尔分数的AlGaN上。此外,由于许多基于iii -氮化物的应用利用了异质结和多量子阱(MQW), AlGaN/GaN和AlxGa(1-x)N/AlyGa(1-y)N(y x)异质结和MQW结构以及合金中从GaN (Eg=3.4 eV)到A1N (Eg=6.2 eV)的带隙可调性将被探索,以更好地理解与这些材料相关的基本深紫外(UV)光电现象。将研究MBE和MOCVD合成的材料。研究工作将解决影响选择性和横向生长的特性,包括晶体取向和缓冲层。将研究量子阱厚度、势垒层中掺杂浓度、AlGaN层中的合金成分以及生长后的加工条件,以评估AlGaN合金中的n型和p型掺杂、缺陷能级、自补偿以及AlGaN中深层杂质的形成。结构表征包括TEM, AFM, SEM和x射线分析;SIMS,光谱学和霍尔效应测量将用于评估成分和电性能。%%%
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Jingyu Lin其他文献
Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping
980 nm光泵浦下掺铒GaN波导的激发截面
- DOI:
10.1063/1.4892427 - 发表时间:
2014 - 期刊:
- 影响因子:4
- 作者:
R. Hui;Ruxin Xie;I. Feng;Z. Sun;Jingyu Lin;Hongxing Jiang - 通讯作者:
Hongxing Jiang
Notice of RetractionCitizens' communal coping strategies to unfairness in public administration domain: The effects of gender, education and trust in government
撤回通知公民对公共行政领域不公平现象的共同应对策略:性别、教育和对政府信任的影响
- DOI:
10.1109/icbmei.2011.5918028 - 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
Jingyu Lin;Zhou Jie;Yongjuan Li - 通讯作者:
Yongjuan Li
Babe: An Experience Sharing Design for Enhancing Fatherhood During Pregnancy
Babe:孕期增强父爱的经验分享设计
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
Jingyu Lin;D. Chang - 通讯作者:
D. Chang
Comment on “Spectral identification of thin film coated and solid form semiconductor neutron detectors” by McGregor and Shultis
对 McGregor 和 Shultis 的“薄膜涂层和固体半导体中子探测器的光谱识别”的评论
- DOI:
10.1016/j.nima.2004.07.210 - 发表时间:
2005 - 期刊:
- 影响因子:0
- 作者:
S. Hallbeck;A. Caruso;S. Adenwalla;J. I. Brand;D. Byun;Hualiang Jiang;Jingyu Lin;Y. Losovyj;C. Lundstedt;D. Mcilroy;W. Pitts;B. Robertson;P. Dowben - 通讯作者:
P. Dowben
Helium isotopes in hot springs of the Karakorum fault and the Central Pamir: Tracing mantle contributions and tectonic dynamics
喀喇昆仑断裂带和帕米尔中部温泉中的氦同位素:示踪地幔贡献与构造动力学
- DOI:
10.1016/j.gloplacha.2025.104897 - 发表时间:
2025-10-01 - 期刊:
- 影响因子:4.000
- 作者:
Shuai Wang;Shihua Qi;Xuelian Huang;Boyuan Zhao;Feng Chen;Genyi He;Sijia Wang;Jingyu Lin - 通讯作者:
Jingyu Lin
Jingyu Lin的其他文献
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{{ truncateString('Jingyu Lin', 18)}}的其他基金
New Design and Manufacture Technologies for High-Performance Millimetre-Wave and Terahertz Waveguide Devices for Space and Terrestrial Communications
用于空间和地面通信的高性能毫米波和太赫兹波导器件的新设计和制造技术
- 批准号:
EP/Y016580/1 - 财政年份:2023
- 资助金额:
$ 42.2万 - 项目类别:
Fellowship
Exploiting Novel Device Structures for Deep Ultraviolet Emitters
利用深紫外发射器的新型器件结构
- 批准号:
1402886 - 财政年份:2014
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
Layer-Structured Semiconductor Alloys: Growth, Characterization, and Applications
层状结构半导体合金:生长、表征和应用
- 批准号:
1206652 - 财政年份:2012
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
Bridging the Miscibility Gap in InGaN Alloys
缩小 InGaN 合金的混溶性差距
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0906879 - 财政年份:2009
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications
III 氮化物深紫外光子材料和结构 - 生长、光学研究和应用
- 批准号:
0504601 - 财政年份:2005
- 资助金额:
$ 42.2万 - 项目类别:
Continuing Grant
Nitride Quantum Wells and Photonic Structures - Growth, Optical Studies, and Applications
氮化物量子阱和光子结构 - 生长、光学研究和应用
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0203373 - 财政年份:2002
- 资助金额:
$ 42.2万 - 项目类别:
Continuing Grant
Dynamics of Fundamental Optical Transitions in Gallium Nitride and Aluminum Gallium Nitride
氮化镓和氮化铝镓中基本光学跃迁的动力学
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9528226 - 财政年份:1996
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$ 42.2万 - 项目类别:
Continuing Grant
Nature of Quantum Localization Probed by Exciton Dynamics in II-VI Semiconductor Alloys
II-VI 半导体合金中激子动力学探测量子局域化的本质
- 批准号:
9408816 - 财政年份:1994
- 资助金额:
$ 42.2万 - 项目类别:
Standard Grant
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