III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications

III 氮化物深紫外光子材料和结构 - 生长、光学研究和应用

• 批准号: 0504601
• 负责人: Jingyu Lin
• 金额: --
• 依托单位: Kansas State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-05-01 至 2009-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0504601&HistoricalAwards=false
• 关键词: III; Nitride; Deep; Ultraviolet; Photonic

This project represents a multifaceted approach to carry out fundamental research needed to further advance the science and technology of semiconductor deep UV (DUV) photonics. One of the major objectives is to identify and understand fundamental mechanisms associated with epitaxial growth and doping of Al-rich AlGaN alloys and AlN. In particular, mechanisms for the formation of native defects during crystal growth, which act as compensating centers, will be explored by employing a high quality AlN epilayer template, off-axis substrates, a pulsed growth scheme, and delta doping. Research activities and basic understanding on DUV photonic materials and devices based upon the Al-rich AlxGa1-xN alloy system are still in early stages. This research project strives for fundamental understanding of the AlGaN DUV photonic material system as well as addressing important applications. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having high technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Through direct involvement in research, students will have unique learning and discovery opportunities in the areas of advanced semiconductor materials, nano-fabrication techniques, semiconductor physics, semiconductor materials fabrication and device processing using state-of-the-art epitaxial growth, lithographic patterning, plasma etching, and advanced materials characterization.***

该项目代表了一种多方面的方法来开展进一步推进半导体深紫外（DUV）光子学科学和技术所需的基础研究。主要目标之一是识别和理解与富铝AlGaN合金和AlN的外延生长和掺杂相关的基本机制。特别是，本机缺陷在晶体生长过程中，作为补偿中心的形成机制，将探讨采用高品质的AlN外延层模板，离轴衬底，脉冲生长方案，和δ掺杂。基于富铝AlxGa 1-xN合金系统的深紫外光子材料和器件的研究活动和基本认识仍处于早期阶段。该研究项目致力于对AlGaN DUV光子材料系统的基本理解以及解决重要应用。 该项目解决了具有高度技术相关性的电子/光子材料科学主题领域的基础研究问题。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。通过直接参与研究，学生将在先进的半导体材料，纳米制造技术，半导体物理，半导体材料制造和器件加工领域拥有独特的学习和发现机会，使用最先进的外延生长，光刻图案化，等离子体蚀刻和先进的材料表征。