Acquisition of a Variable-Temperature Scanning Tunneling Microscope and X-Ray Photoelectron Spectroscopy Facility for a Molecular Beam Epitaxy System

小行星9601598 将在俄亥俄州州立大学建立一个超高真空、变温扫描隧道显微镜和一个X射线光谱设施。该设施将连接到一个模块化的分子束外延系统，从而将允许在原位表征异质结构界面的化学和电子结构。该设施支持的研究活动包括研究在晶格匹配的Ge/GeSi/Si衬底上生长的GaAs的界面化学和原子结构，金属/半导体结构中的电荷捕获，用III-V材料生长外延金属/半导体结构，以及聚合物薄膜上的金属接触形成。扫描隧道显微镜将被配置，以便它可以进行变温弹道电子发射显微镜的掩埋界面，除了传统的表面结构研究。这将允许在宽范围的金属覆盖的金属/半导体界面形成的详细研究。 %将所要求的仪器与薄膜生长设备相结合，可为不同材料之间的界面表征提供强大的工具。除了直接的研究利益，仪器的收购将通过跨学科的研究，利用国家的最先进的设施，加强从几个部门的研究生的培训。 ***

9601598 Pelz An ultrahigh-vacuum, variable-temperature scanning tunneling microscope and an x-ray spectroscopy facility will be established at Ohio State University. The facility will be attached to a modular molecular beam epitaxy system and will thus allow for in situ characterization of the chemistry and electronic structure of heterostructure interfaces. Research activities supported by the facility include studies of the interface chemistry and atomic structure of GaAs grown on lattice-matched Ge/GeSi/Si substrates, charge trapping in metal/semiconductor structures, the growth of epitaxial metal/semiconductor structures with III-V materials, and metal contact formation on polymer films. The scanning tunneling microscope will be configured so that it can perform variable-temperature ballistic electron emission microscopy of buried interfaces, in addition to conventional structural studies of surfaces. This will permit detailed studies of metal/semiconductor interface formation over a wide range of metal coverage. %%% The incorporation of the requested instrumentation to the film growth facility results in a powerful tool for the characterization of interfaces between dissimilar materials. In addition to the direct research benefits, acquisition of the instrumentation will enhance the training of graduate students from several departments through interdisciplinary research using state-of-the-art facilities. ***