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Acquisition of a Variable-Temperature Scanning Tunneling Microscope and X-Ray Photoelectron Spectroscopy Facility for a Molecular Beam Epitaxy System

为分子束外延系统购置变温扫描隧道显微镜和 X 射线光电子能谱设备

基本信息

批准号：
9601598
负责人：
Jonathan Pelz
金额：
$ 28.19万
依托单位：
Ohio State University Research Foundation -DO NOT USE
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1996
资助国家：
美国
起止时间：
1996-09-01 至 1999-05-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9601598&HistoricalAwards=false
关键词：
Acquisition Variable Temperature Scanning Tunneling

项目摘要

9601598 Pelz An ultrahigh-vacuum, variable-temperature scanning tunneling microscope and an x-ray spectroscopy facility will be established at Ohio State University. The facility will be attached to a modular molecular beam epitaxy system and will thus allow for in situ characterization of the chemistry and electronic structure of heterostructure interfaces. Research activities supported by the facility include studies of the interface chemistry and atomic structure of GaAs grown on lattice-matched Ge/GeSi/Si substrates, charge trapping in metal/semiconductor structures, the growth of epitaxial metal/semiconductor structures with III-V materials, and metal contact formation on polymer films. The scanning tunneling microscope will be configured so that it can perform variable-temperature ballistic electron emission microscopy of buried interfaces, in addition to conventional structural studies of surfaces. This will permit detailed studies of metal/semiconductor interface formation over a wide range of metal coverage. %%% The incorporation of the requested instrumentation to the film growth facility results in a powerful tool for the characterization of interfaces between dissimilar materials. In addition to the direct research benefits, acquisition of the instrumentation will enhance the training of graduate students from several departments through interdisciplinary research using state-of-the-art facilities. ***

[601598] Pelz俄亥俄州立大学将建立一台超高真空、变温扫描隧道显微镜和一台x射线光谱设备。该设施将连接到一个模块化分子束外延系统，因此将允许在原位表征异质结构界面的化学和电子结构。该设施支持的研究活动包括在晶格匹配的Ge/GeSi/Si衬底上生长的GaAs的界面化学和原子结构的研究，金属/半导体结构中的电荷捕获，III-V材料外延金属/半导体结构的生长，以及聚合物薄膜上金属接触的形成。扫描隧道显微镜将被配置为除了传统的表面结构研究外，还可以对埋藏界面进行变温弹道电子发射显微镜观察。这将允许在广泛的金属覆盖范围内对金属/半导体界面形成进行详细的研究。将所要求的仪器结合到薄膜生长设备中，形成了表征不同材料之间界面的强大工具。除了直接的研究利益外，仪器的收购将通过使用最先进的设备进行跨学科研究，加强对几个部门研究生的培训。＊＊＊