MRI/RUI: Acquisition of a Variable Temperature Ultra High Vacuum Scanning Probe Microscope for Undergraduate Materials Research and Education

这项主要研究仪器RUI赠款支持OMICRON超高真空（UHV）变温扫描隧道显微镜/原子力显微镜（VT-STM/AFM）和表面分析室的收购。VT-STM/AFM包括一个完整的单细胞蒸发器和分析室，通过增加在形成过程中原位直接成像原子/纳米尺度结构的能力，将补充现有的表面光谱和衍射探针阵列。分子束外延源将提供外延生长能力的薄膜和纳米结构制造。目前可用的特高压样品制备仪器将被集成到所获得的分析室中。通过原位转移机制，样品将在STM/AFM和分析室之间转移，以进行最佳的表面制备、成像和表征。该研究计划将通过高效的本科生参与研究，以非常重要的方式独特地影响本科教育。VT- STM/AFM的收购将使该计划成为国家认可的本科材料科学教育模式。凭借这种实验能力，将开展几项基础和应用研究活动：研究涉及用于ULSI晶体管中的栅极绝缘体的薄氮化物膜的制造和化学表征，具有原子尺度形态的SOI膜的电导测量的相关性，同质和异质外延系统中的层间扩散机制的原子学研究，作为电子和光子驱动过程的结果的薄半导体合金膜形成的研究，研究了Nb对TiAlNb合金氧化过程的影响。此外，还将与工业合作伙伴建立合作关系，以有效地将基础研究成果转化为实际技术应用，并为本科生提供与应用科学相关的优秀工作培训。

This Major Research Instrumentation RUI grant supports the acquisition of an OMICRON Ultra High Vacuum (UHV) Variable Temperature Scanning Tunneling/Atomic Force Microscope (VT- STM/AFM) and surface analysis chamber. The VT-STM/AFM, which includes an integral single cell evaporator, and the analysis chamber will complement the current array of surface spectroscopic and diffraction probes available by adding the capability to directly image structures at the atomic/nano-scale in situ during formation. The MBE source will provide epitaxial growth capabilities for ultrathin film and nanostructure fabrication. Currently available UHV sample preparation instrumentation will be integrated into the acquired analysis chamber. Through an in situ transfer mechanism samples will be transferred between the STM/AFM and analysis chambers for optimum surface preparation, imaging, and characterization. The research program will uniquely impact undergraduate education in a very significant way through a highly effective undergraduate involvement in research. The acquisition of the VT- STM/AFM will make it possible for this program to become a nationally recognized model for undergraduate materials science education.With this experimental capability several fundamental and applied research activities will be pursued: investigations involving fabrication and chemical characterization of thin nitride films for use as a gate insulator in ULSI transistors, correlation of conductance measurements of ultrathin films with atomic-scale morphology, atomistic studies of mechanisms of interlayer diffusion in homo- and heteroepitaxial systems, studies of thin semiconductor alloy film formation as a result of electron and photon driven processes, and investigations of the role of Nb on oxidation processes of TiAlNb alloys. Also, collaborations with industrial partners will be established to efficiently convert fundamental research results into practical technological applications and provide undergraduate students with excellent work related training in applied science.