MRI/RUI: Acquisition of a Variable Temperature Ultra High Vacuum Scanning Probe Microscope for Undergraduate Materials Research and Education

这项重大研究仪器RUI赠款支持购买Omicron超高真空(UHV)可变温度扫描隧道/原子力显微镜(VT-STM/AFM)和表面分析室。VT-STM/AFM包括一个集成单电池蒸发器和分析室，通过增加在形成过程中直接在原子/纳米尺度上对结构进行成像的能力，将补充现有的表面光谱和衍射探头阵列。MBE源将为超薄膜和纳米结构的制造提供外延生长能力。目前可用的特高压样品制备仪器将集成到收购的分析室中。通过原位转移机制，样品将在STM/AFM和分析室之间转移，以获得最佳的表面准备、成像和表征。该研究计划将通过让本科生高效地参与研究，以非常重要的方式对本科生教育产生独特的影响。VT-STM/AFM的获得将使该项目有可能成为全国公认的本科生材料科学教育模式。凭借这一实验能力，将开展几项基础和应用研究活动：用于ULSI晶体管栅绝缘体的氮化物薄膜的制备和化学表征，超薄膜电导测量与原子尺度形貌的关联，同质和异质外延系统层间扩散机制的原子研究，电子和光子驱动过程导致的半导体合金薄膜形成的研究，以及Nb在TiAlNb合金氧化过程中的作用研究。此外，还将与行业合作伙伴建立合作关系，以有效地将基础研究成果转化为实际技术应用，并为本科生提供出色的应用科学相关工作培训。

This Major Research Instrumentation RUI grant supports the acquisition of an OMICRON Ultra High Vacuum (UHV) Variable Temperature Scanning Tunneling/Atomic Force Microscope (VT- STM/AFM) and surface analysis chamber. The VT-STM/AFM, which includes an integral single cell evaporator, and the analysis chamber will complement the current array of surface spectroscopic and diffraction probes available by adding the capability to directly image structures at the atomic/nano-scale in situ during formation. The MBE source will provide epitaxial growth capabilities for ultrathin film and nanostructure fabrication. Currently available UHV sample preparation instrumentation will be integrated into the acquired analysis chamber. Through an in situ transfer mechanism samples will be transferred between the STM/AFM and analysis chambers for optimum surface preparation, imaging, and characterization. The research program will uniquely impact undergraduate education in a very significant way through a highly effective undergraduate involvement in research. The acquisition of the VT- STM/AFM will make it possible for this program to become a nationally recognized model for undergraduate materials science education.With this experimental capability several fundamental and applied research activities will be pursued: investigations involving fabrication and chemical characterization of thin nitride films for use as a gate insulator in ULSI transistors, correlation of conductance measurements of ultrathin films with atomic-scale morphology, atomistic studies of mechanisms of interlayer diffusion in homo- and heteroepitaxial systems, studies of thin semiconductor alloy film formation as a result of electron and photon driven processes, and investigations of the role of Nb on oxidation processes of TiAlNb alloys. Also, collaborations with industrial partners will be established to efficiently convert fundamental research results into practical technological applications and provide undergraduate students with excellent work related training in applied science.