GOALI/Graduate Student Industrial Fellowship: Chemo- Mechanical Polishing of Silicon and Silicon Dioxide

GOALI/研究生工业奖学金：硅和二氧化硅的化学机械抛光

• 批准号: 9631224
• 负责人: Steven Danyluk
• 金额: $ 0.51万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-10-01 至 1997-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9631224&HistoricalAwards=false
• 关键词: GOALI; Graduate; Student; Industrial; Fellowship

DMI-9631224 Danyluk Chemo-mechanical polishing (CMP) chemically enhances removal of the surface layers of metals, oxides, and polymers in manufacturing large-scale integrated circuits. It is an alternative process to reactive ion etching (RIE) of semiconductor device, polishing of other non-metallic systems such as quartz for laser windows, and silicon nitride ball bearing. The university has been developing hydrodynamic models for the tribological contact between a polishing pad and a silicon or silicon dioxide surface, measuring fluid film thickness, constructing sensors for the situ measurement of wear rates, and developing models for the wear of silicon dioxide. This project provides an opportunity for two graduate students to spend three months of summer in industry implementing and applying the experimental techniques and models to the polishing of silicon dioxide (dielectric). This collaboration will lead to am improved understanding of CMP through (1) the implementation of models and measurement techniques developed at the university; and (2) the knowledge gained through industry experience and the need for production of consumable and CMP tools.

DMI-9631224 Danyluk化学机械抛光可在化学上增强大规模集成电路制造过程中金属、氧化物和聚合物表层的去除。它是半导体器件反应离子刻蚀(RIE)、激光窗口用石英和氮化硅滚珠轴承等其他非金属系统抛光的替代工艺。该大学一直在开发抛光垫与硅或二氧化硅表面之间的摩擦学接触的流体动力学模型，测量流体膜厚度，建造用于现场测量磨损率的传感器，并开发二氧化硅磨损模型。该项目为两名研究生提供了一个机会，让他们在工业领域度过三个月的暑假，实施并应用实验技术和模型来抛光二氧化硅(电介质)。这种合作将通过(1)实施大学开发的模型和测量技术；(2)通过行业经验和生产消耗品和化学机械加工工具的需要获得知识，从而提高对化学机械加工的了解。