GOALI/Graduate Student Industrial Fellowship: Chemo- Mechanical Polishing of Silicon and Silicon Dioxide

Danyluk化学机械抛光（CMP）在制造大规模集成电路中化学增强了金属，氧化物和聚合物表面层的去除。它是半导体器件反应离子蚀刻（RIE）、激光窗口石英、氮化硅滚珠轴承等非金属系统抛光的替代工艺。该大学一直在开发抛光垫与硅或二氧化硅表面之间摩擦学接触的流体动力学模型，测量流体膜厚度，构建用于原位测量磨损率的传感器，以及开发二氧化硅磨损的模型。该项目为两名研究生提供了一个机会，让他们在夏季花三个月的时间在工业中实施和应用实验技术和模型来抛光二氧化硅（电介质）。这种合作将通过(1)实施大学开发的模型和测量技术，提高对CMP的理解；(2)通过行业经验获得的知识以及生产消耗品和CMP工具的需求。

DMI-9631224 Danyluk Chemo-mechanical polishing (CMP) chemically enhances removal of the surface layers of metals, oxides, and polymers in manufacturing large-scale integrated circuits. It is an alternative process to reactive ion etching (RIE) of semiconductor device, polishing of other non-metallic systems such as quartz for laser windows, and silicon nitride ball bearing. The university has been developing hydrodynamic models for the tribological contact between a polishing pad and a silicon or silicon dioxide surface, measuring fluid film thickness, constructing sensors for the situ measurement of wear rates, and developing models for the wear of silicon dioxide. This project provides an opportunity for two graduate students to spend three months of summer in industry implementing and applying the experimental techniques and models to the polishing of silicon dioxide (dielectric). This collaboration will lead to am improved understanding of CMP through (1) the implementation of models and measurement techniques developed at the university; and (2) the knowledge gained through industry experience and the need for production of consumable and CMP tools.