Porous-Silicon-Layer Adsorption Vapor Sensor
Porous-Silicon-Layer Adsorption Vapor Sensor
批准号:
9714157
负责人:
Massoud Kaviany
金额:
$18.04万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-11-01 至 1999-10-31
中文摘要
摘要:首席研究员提议研究使用多孔硅层来改善蒸汽传感器的性能。硅层已经证明了对蒸汽吸收量的电容灵敏度,它们的使用将允许开发可以在高温下工作的小型化传感器。通过优化孔隙结构,这些传感器将具有更高的灵敏度,并且包含热电冷却/加热可以检测大范围的蒸汽。小型化将允许对过程和温度进行局部控制。
英文摘要
ABSTRACT The principal investigator proposes to study the use of porous silicon layers for improving the performance of vapor sensors. Silicon layers have demonstrated capacitance sensitivity to the amount of vapor absorbed and their use will permit the development of miniaturized sensors which can operate at high temperatures. By optimizing the pore structure, these sensors will have improved sensitivity and with the inclusion of thermoelectric cooling/heating can sense a large range of vapors. Miniaturization will allow for local control of processes and temperatures.
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