MRI: Acquisition of a Commercial OMCVD System for Compound Semiconductor Material and Device Research
MRI: Acquisition of a Commercial OMCVD System for Compound Semiconductor Material and Device Research
批准号:
9724290
负责人:
Kei Lau
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-10-01 至 2000-09-30
中文摘要
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英文摘要
9724290 Lau The Department of Electrical and Computer Engineering at the University of Massachusetts/Amherst will purchase a commercial organometallic chemical vapor deposition (OMCVD) system which will be dedicated to support research in compound semiconductor materials and devices. The OMCVD system will be used for many research projects, including in particular: (1) Resonant tunneling injection lasers, (2) Selective-Area Growth of Compound Semiconductors by OMCVD, (3) Application of the Two-Dimensional Electron Gas Medium to THz Detectors and Heterodyne Receivers, (4) Optically-Pumped THz Sources/lasers, (5) Quantum Well Solar Cells, (6) Alternate sources for OMVPE of Ill-V semiconductors. Acquisition of the OMCVD system will allow the PI to continue his pursuit of advanced device concepts such as resonant tunneling injection lasers, 2-DEG detector and mixer arrays, THz sources, etc. In addition, it will also allow us to work more closely with industrial companies who are interested in further development of more mature devices such as PHEMTs (pseudomorphic high-electron mobility transistors) and HBTs (Heterojuction Bipolar Transistors). In the development of new device structures, testing of material concepts, and compatibility of different technologies, device wafers (full 3" or 4") with various structural designs grown in this system can be placed in the process lines by the companies for comparison. This system will also greatly increase his capacity of training students in semiconductors in general and with familiarity of OMCVD specifically. In summary, this piece of equipment is essential to some of our major projects and will provide new opportunities for us to collaborate with industrial researchers, as well as training students who are in high demand by the semiconductor, microwave, and photonic industries nafionwide. ***
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GaN Growth by OMVPE Using Novel Nitrogen Sources
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批准号:9522082
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项目类别:Continuing Grant
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资助金额:$30.56万
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财政年份:1995
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负责人:Kei Lau
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依托单位:
RESEARCH EQUIPMENT GRANT: Fourier Transform Spectrometer for Compound Semiconductor Materials and Device Research
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批准号:9412015
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1994
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负责人:Kei Lau
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依托单位:
Faculty Awards for Women
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批准号:9023485
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1991
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负责人:Kei Lau
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依托单位:
Engineering Research Grant: X-ray Diffractometer
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批准号:9009284
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项目类别:Standard Grant
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资助金额:$5.1万
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财政年份:1990
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负责人:Kei Lau
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依托单位:
Tensile Strain and Quantum Size Effects in III-V Semiconductor Material Systems
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批准号:8911995
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项目类别:Continuing Grant
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资助金额:$19.1万
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财政年份:1989
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负责人:Kei Lau
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依托单位:
Utilization of Oxygen Injection in OMCVD for III-V Electron c Materials (REU)
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批准号:8816235
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:1988
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负责人:Kei Lau
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依托单位:
ROW: (Career) - Slow-Wave Characteristics of Modulation- Doped A1GaAs/GaAs Heterostructures
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批准号:8708259
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1987
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负责人:Kei Lau
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依托单位:
Research Initiation: Selective Epitaxy of Gallium Arsenide By Organometallic Chemical Vapor Deposition
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批准号:8307396
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项目类别:Standard Grant
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资助金额:$5.4万
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财政年份:1983
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负责人:Kei Lau
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依托单位:
海外基金