Tensile Strain and Quantum Size Effects in III-V Semiconductor Material Systems

拉伸应变与量子尺寸的综合研究 三大化合物半导体材料中的效应 系统提出。 目标是彻底 研究这些影响，这将导致能带结构 新设备应用的工程设计。 量子阱 在这项研究中包括的结构是AlxGa 1-xAs/GaAsyP 1- y、AlxGa1-xSb/GaSbyAs1-y和GaxIn1-xAs/InP（x0.47）， 其中阱层处于双轴张力下。 第一个材料系统的初步结果是 被认为是非常有前途的。 这些结构将 通过有机金属化学气相沉积生长 （OMCVD），其特征在于具有多种电 和光学测量。 系统实验结果 将结合理论模型来描述 能带结构 它能提供拉伸的信息- 应变OW结构，并导致设备的探索 利用其独特的特性。 生长相关性 光电特性参数 此外，亦有助加深市民对该署的了解 应变层生长的过程。 以证明 将制造潜在的导电探测器， 测试. 这将允许评估拉伸应变 对量子阱激光特性的影响， 阈值电流和光增益依赖于 极化

A comprehensive study of tensile strain and quantum size effects in three major compound semiconductor material systems is proposed. The goals are to thoroughly investigate these effects which will lead to band structure engineering for new device applications. Quantum well structures included in this study are AlxGa1-xAs/GaAsyP1- y, AlxGa1-xSb/GaSbyAs1-y, and GaxIn1-xAs/InP (xo.47), in which the well layers are under biaxial tension. Preliminary results in the first material system were found to be very promising. These structures will be grown by organometallic chemical vapor deposition (OMCVD) and characterized by a variety of electrical and optical measurements. Systemic experimental results will be combined with theoretical models to describe the band structure. This will provide insight on the tensile- strained OW structues and lead to exploration of devices using their unique properties. Correlation of the growth parameters with the optical and electrical characteristics will also provide a better understanding of the OMCVD process of strained-layer growth. To demonstrate the potential conductive detectors will be fabricated and tested. This will allow assessment of the tensile strain effects on quantum well lasing properties such as threshold currents and optical gain dependence on polarization.