Tensile Strain and Quantum Size Effects in III-V Semiconductor Material Systems

III-V 半导体材料系统中的拉伸应变和量子尺寸效应

• 批准号: 8911995
• 负责人: Kei Lau
• 金额: $ 19.1万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1993-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8911995&HistoricalAwards=false
• 关键词: Tensile; Strain; Quantum; Size; Effects

A comprehensive study of tensile strain and quantum size effects in three major compound semiconductor material systems is proposed. The goals are to thoroughly investigate these effects which will lead to band structure engineering for new device applications. Quantum well structures included in this study are AlxGa1-xAs/GaAsyP1- y, AlxGa1-xSb/GaSbyAs1-y, and GaxIn1-xAs/InP (xo.47), in which the well layers are under biaxial tension. Preliminary results in the first material system were found to be very promising. These structures will be grown by organometallic chemical vapor deposition (OMCVD) and characterized by a variety of electrical and optical measurements. Systemic experimental results will be combined with theoretical models to describe the band structure. This will provide insight on the tensile- strained OW structues and lead to exploration of devices using their unique properties. Correlation of the growth parameters with the optical and electrical characteristics will also provide a better understanding of the OMCVD process of strained-layer growth. To demonstrate the potential conductive detectors will be fabricated and tested. This will allow assessment of the tensile strain effects on quantum well lasing properties such as threshold currents and optical gain dependence on polarization.

提出了对三种主要化合物半导体材料体系中的拉伸应变和量子尺寸效应的综合研究。 目标是彻底研究这些影响，这将导致新器件应用的能带结构工程。 本研究中包括的量子阱结构是 AlxGa1-xAs/GaAsyP1-y、AlxGa1-xSb/GaSbyAs1-y 和 GaxIn1-xAs/InP (xo.47)，其中阱层处于双轴张力下。 第一个材料系统的初步结果被发现非常有希望。 这些结构将通过有机金属化学气相沉积（OMCVD）生长，并通过各种电学和光学测量来表征。 系统的实验结果将与理论模型相结合来描述能带结构。 这将提供对拉伸应变 OW 结构的深入了解，并导致利用其独特性能探索器件。 生长参数与光学和电学特性的相关性也将有助于更好地理解应变层生长的 OMCVD 工艺。 为了证明潜在的导电探测器将被制造和测试。 这将允许评估拉伸应变对量子阱激光特性的影响，例如阈值电流和光学增益对偏振的依赖性。