Engineering Research Grant: X-ray Diffractometer

工程研究补助金：X射线衍射仪

• 批准号: 9009284
• 负责人: Kei Lau
• 金额: $ 5.1万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9009284&HistoricalAwards=false
• 关键词: Engineering; Research; Grant; ray; Diffractometer

We are requesting funding for the purchase of an X-ray diffractometer for our compound semiconductor materials and devices research. We chose a compact bench top model which is specifically designed for the characterization of compound semiconductors. This diffractometer will allow us to make precise measurements of the lattice constants of grown epitaxial layers on binary alloy substrates and assess the quality of the epi-layers. Many of the on-going research programs will benefit from the acquisition of the X-ray diffractometer. Our experimental studies on strained-layers and hetero-epitaxy have mainly relied on optical and electrical characterization techniques. In order to pursue a thorough investigation more attention must be paid to the structural properties of the materials. For a number of the device research programs, it is necessary to grow perfectly lattice-matched hetero-junctions for some specific applications. The X-ray diffractometer will provide us with information on the exact amount of mismatch so that very fine adjustments can be made in the growth parameters to obtain lattice matching. Accurate measure of the mismatch is also required for the study of different strain effects in various III-V material systems. Furthermore, knowledge of the alloy compositions in the heterostructures is important in optimization of the devices and correlation of the device performance to the structural parameters. X-ray diffraction measurement is the most direct means of determining the alloy compositions in layered structures. We have developed organometallic chemical vapor deposition techniques to grown high quality III-V structures for our material and device research programs. Addition of a double-crystal X-ray diffractometer will undoubtedly enhance these programs and provide crucial steps for further advancement.

我们正在申请资金购买 我们化合物的X射线衍射仪 半导体材料和器件研究。 我们选择了一个紧凑的台式模型， 专为表征 化合物半导体 这 衍射仪可以让我们精确地 晶体的晶格常数的测量 二元合金衬底上的外延层 并评估外延层的质量。许多 正在进行的研究项目将受益于 从X光片的采集 衍射仪 我们的实验研究 应变层和异质外延主要 依靠光电技术 表征技术。 为了 彻查更加重视 必须支付的结构特性 本服务之目的 对于一些设备， 研究计划，有必要增长 完全晶格匹配的异质结， 一些具体的应用。 x射线 衍射仪将为我们提供 关于不匹配的确切量的信息， 可以在 生长参数以获得晶格匹配。 对不匹配的精确测量也是 研究不同菌株所需的 各种III-V材料系统的影响。 此外，合金的知识 异质结构中的组分是 在优化设备方面很重要， 器械性能与 结构参数 x射线衍射 测量是最直接的手段， 确定层状合金的成分， 结构.我们开发了有机金属 化学气相沉积技术 我们材料的高质量III-V族结构 和设备研究项目。 此外 双晶X射线衍射仪将 毫无疑问，加强这些方案，并提供 进一步发展的关键步骤。