Utilization of Oxygen Injection in OMCVD for III-V Electron c Materials (REU)

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A one-year study to explore and develop an oxidation process for III-V semiconductors in an OMCVD system is proposed. The oxidation can serve the purpose of either in-situ cleaning or mask generation for selective epitaxy, utilizing the different oxidation and sublimation temperatures of various III-V compounds and their oxides. In-situ oxide mask generation not only reduces the processing procedures for selective epitaxy but also provides better semiconductor-oxide interfaces. Preliminary experiments carried out in a modified reaction chamber with an additional oxygen inlet and exhaust has been extremely promising. Successful development of this project will create new revenues for both semiconductor processing ("all-vacuum" process) and III-V MOS devices.