ROW: (Career) - Slow-Wave Characteristics of Modulation- Doped A1GaAs/GaAs Heterostructures

行：（职业）- 调制掺杂 A1GaAs/GaAs 异质结构的慢波特性

• 批准号: 8708259
• 负责人: Kei Lau
• 金额: $ 5万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-09-01 至 1989-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8708259&HistoricalAwards=false
• 关键词: ROW; Career; Slow; Wave; Characteristics

This is a one-year pilot study to investigate the slow-wave characteristics of modulated-doped A1GaAs/GaAs heterostructures. The objective of this project is to experimentally determine the feasibility of utilizing A1GaAs/GaAs Schottky barriers as phase shifters, attenuator, and switches in the microwave/millimeter wave regime. Combined with the promising modulation-doped field-effect transistor technology, integration of compatible active and passive elements is of great significance in the development of microwave/millimeter wave monolithic integrated circuits. High quality A1GaAs/GaAs heterostructure will be grown by OMCVD and characterized by electrical and optical methods. Slow-wave devices in microstrip and coplanar waveguide configurations will be fabricated for preliminary studies. DC and microwave measurements will be made with frequency characteristics over as broad a range as possible. These results will provide a basis for future design of slow-wave devices using heterostructure materials.

这是一项为期一年的试点研究，旨在研究调制掺杂A1GaAs/GaAs异质结构的慢波特性。该项目的目的是通过实验确定在微波/毫米波波段利用A1GaAs/GaAs肖特基势垒作为移相器、衰减器和开关的可行性。结合极具发展前景的调制掺杂场效应晶体管技术，将兼容的有源和无源元件集成在微波/毫米波单片集成电路中具有重要意义。采用OMCVD法生长出高质量的A1GaAs/GaAs异质结构，并用电学和光学方法对其进行表征。将制作微带和共面波导结构的慢波器件进行初步研究。直流和微波测量将在尽可能宽的范围内进行频率特性测量。这些结果将为未来异质结构材料慢波器件的设计提供基础。