ROW: (Career) - Slow-Wave Characteristics of Modulation- Doped A1GaAs/GaAs Heterostructures

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This is a one-year pilot study to investigate the slow-wave characteristics of modulated-doped A1GaAs/GaAs heterostructures. The objective of this project is to experimentally determine the feasibility of utilizing A1GaAs/GaAs Schottky barriers as phase shifters, attenuator, and switches in the microwave/millimeter wave regime. Combined with the promising modulation-doped field-effect transistor technology, integration of compatible active and passive elements is of great significance in the development of microwave/millimeter wave monolithic integrated circuits. High quality A1GaAs/GaAs heterostructure will be grown by OMCVD and characterized by electrical and optical methods. Slow-wave devices in microstrip and coplanar waveguide configurations will be fabricated for preliminary studies. DC and microwave measurements will be made with frequency characteristics over as broad a range as possible. These results will provide a basis for future design of slow-wave devices using heterostructure materials.