GaN Growth by OMVPE Using Novel Nitrogen Sources

使用新型氮源通过 OMVPE 生长 GaN

• 批准号: 9522082
• 负责人: Kei Lau
• 金额: $ 30.56万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522082&HistoricalAwards=false
• 关键词: GaN; Growth; OMVPE; Using; Novel

9522082 Lau The purpose of this project is to investigate novel nitrogen sources for Group-III nitride growth by organometallic vapor phase epitaxy (OMVPE). Emphasis will be on the identification of (a) viable source(s) which will allow high quality nitride growth at lower temperatures than what are required using ammonia. A close collaborative effort has been established between the University of Massachusetts/Amherst and Morton Advanced Materials (a division of Morton International, Inc.), a major supplier of metalorganic sources of OMVPE. With sources developed by Morton, GaN will be grown with various growth parameters. Promising sources will be identified and thoroughly investigated via optimization growth experiments. Grown layers are characterized by microscopic, structural (double crystal X-ray diffraction and TEM), electrical (CV and Hall), and optical (transmission, photoluminescence) measurements. Feedback of growth results to Morton allows further refinement of the sources. Suitable p- and n-type dopant source compatible with the new nitrogen sources will also be identified through doping experiments. Investigations of the effects of the nitrogen source on dopant incorporation will be included. Finally, this information will be applied to the growth and fabrication of simple devices such as LEDs and MESFETs, allowing further evaluation of the layer quality pertinent to device applications. ***

9522082刘这个项目的目的是研究金属有机气相外延(OMVPE)生长第三类氮化物的新氮源。重点将是确定(一个)可行的来源(S)，它将允许在比使用氨气所需的温度更低的温度下高质量地生长氮化物。马萨诸塞大学/阿默斯特分校和莫顿先进材料公司(莫顿国际公司的一个部门)之间已经建立了密切的合作努力，莫顿先进材料公司是OMVPE的金属有机来源的主要供应商。利用Morton开发的源，可以在不同的生长参数下生长GaN。有希望的来源将通过优化生长实验来确定和彻底调查。通过微观、结构(双晶X射线衍射和透射电子显微镜)、电学(循环伏安和霍尔)和光学(透射式、光致发光)测量对生长的薄膜进行了表征。将增长结果反馈给莫顿，可以进一步完善来源。还将通过掺杂实验确定与新氮源兼容的合适的p型和n型掺杂源。将包括氮源对掺杂剂掺入的影响的调查。最后，这些信息将应用于LED和MESFET等简单器件的生长和制造，从而进一步评估与器件应用相关的层质量。***