The Fabrication and Physical Properties of Integrated Metal and Semiconductor Nanocrystal Systems

集成金属和半导体纳米晶体系统的制造和物理性能

基本信息

  • 批准号:
    9726597
  • 负责人:
  • 金额:
    $ 94.45万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1998
  • 资助国家:
    美国
  • 起止时间:
    1998-03-01 至 2001-02-28
  • 项目状态:
    已结题

项目摘要

9726597 Alivisatos This FRG/GOALI project is multidisciplinary, involving elements of Chemistry, Physics, Engineering and Materials Science. Professors A. Paul Alivisatos and James R. Heath at UCB and UCLA, respectively, are collaborating with R. Stanley Williams at Hewlett-Packard Laboratories. The aim of the project is to lay the groundwork for the demonstration and the development of nanocrystal(NC) and nanocrystal array(NCA) based devices by first developing techniques for synthesis of NC-based thin films appropriate for device applications, and by understanding and optimizing the properties of NC/x interfaces. A variety of potential applications, ranging from phosphors to photovoltaics to electronic switching and storage devices, are envisioned for these materials. The approach involves two aspects. The first is the development of techniques for integrating nanocrystals and nanocrystal assemblies into technologically relevant environments. The second is the development of a physical picture of how the integrated systems operate. Chemical techniques for fabricating nanocrystal integrated systems and examining their structural characteristics will be developed. Their optical properties will be interrogated with time and frequency resolved spectroscopies. Temperature dependent electron transport, photovoltaic, and capacitance measurements through integrated NC and NCA systems will be carried out using contacts produced by electron-beam lithography. Particular effort will be spent on controlling and characterizing the interfaces in these various systems. The project is co-supported by four NSF programs, and the MPS OMA(Office of Multidisciplinary Activities). %%% This project addresses forefront research issues in an interdisciplinary area of science and engineering having high technological relevance. The research will contribute basic knowledge at a fundamental level to important aspects of materials and devices, and will provide improved understanding and a basis for designing and producing improved materials and structures for devices of the future. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
9726597阿里维萨托斯这个联邦德国/GOALI项目是多学科的,涉及化学、物理、工程和材料科学。加州大学洛杉矶分校的A·保罗·阿里维萨托斯教授和加州大学洛杉矶分校的詹姆斯·R·希思教授分别与惠普实验室的R·斯坦利·威廉姆斯合作。该项目的目的是通过首先开发适用于器件应用的NC基薄膜的合成技术,并通过了解和优化NC/x接口的特性,为基于纳米晶(NC)和纳米晶阵列(NCA)的器件的演示和开发奠定基础。这些材料的各种潜在应用,从荧光粉到光伏到电子开关和存储设备,都被设想出来。该方法涉及两个方面。第一个是开发将纳米晶体和纳米晶体组件集成到技术相关环境中的技术。第二是制定集成系统如何运行的物理图景。将发展制备纳米晶集成系统和检测其结构特征的化学技术。它们的光学性质将用时间和频率分辨光谱仪进行询问。通过集成的NC和NCA系统,将使用电子束光刻产生的触点进行依赖温度的电子传输、光伏和电容测量。将花费特别的努力来控制和表征这些不同系统中的接口。该项目由四个NSF项目和MPS OMA(多学科活动办公室)共同支持。这个项目致力于具有高度技术相关性的科学和工程交叉学科领域的前沿研究问题。这项研究将在基础水平上为材料和器件的重要方面贡献基本知识,并将为设计和生产未来器件的改进材料和结构提供更好的理解和基础。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。***

项目成果

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Armand Alivisatos其他文献

Armand Alivisatos的其他文献

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{{ truncateString('Armand Alivisatos', 18)}}的其他基金

EAGER: Towards molecular scale resolution in studies of the anomalous motion of nanoparticles using liquid phase electron microscopy
EAGER:使用液相电子显微镜研究纳米颗粒的异常运动,实现分子尺度分辨率
  • 批准号:
    2039624
  • 财政年份:
    2020
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Standard Grant
Understanding epitaxial nanocrystal attachment processes across length scales with the aim of designing defect-free interfaces
了解跨长度尺度的外延纳米晶体附着过程,旨在设计无缺陷的界面
  • 批准号:
    1808151
  • 财政年份:
    2018
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Standard Grant
Collaborative Proposal -- ITR/SY Molecular Computational with Automated Microfluidic Sensors (MCAMS)
合作提案——ITR/SY 分子计算与自动化微流控传感器 (MCAMS)
  • 批准号:
    0121368
  • 财政年份:
    2001
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Continuing Grant
Surface Science of Semiconductor Nanocrystals
半导体纳米晶体的表面科学
  • 批准号:
    9505302
  • 财政年份:
    1995
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Continuing Grant
Presidential Young Investigator Award
总统青年研究员奖
  • 批准号:
    9057186
  • 财政年份:
    1990
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Continuing Grant
Electronic Structure of Large Semiconductor Clusters
大型半导体簇的电子结构
  • 批准号:
    8917969
  • 财政年份:
    1990
  • 资助金额:
    $ 94.45万
  • 项目类别:
    Standard Grant

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