Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors

基于氮化物量子点的光学器件的生长、制造和物理特性：发光二极管、激光二极管和光电探测器

• 批准号: EP/C543521/1
• 负责人: Tao Wang
• 金额: $ 14.08万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FC543521%2F1
• 关键词: Growth; fabrication; physical; properties; nitride

GaN-based optoelectronic devices have been a topic of intense research due to the wide range of applications, including short wavelength laser diodes for next generation digital versatile disk (DVD), blue/green light emitting diodes for large scale full-color displays and solid state lighting as, ultraviolet light emitting diodes for biology, chemistry and environmental protection and photodetectors for fame and heat sensors monitor. For example, the storage capacity of GaN-based DVD is about four time higher than that of currently used GaAs-DVD. The popularly used incandescent lamp can be replaced by GaN-based solidstate lighting, which can greatly save energy and have a much longer life-time. However, due to the limits of the current technology, it is becoming more difficult to continuously improve the performance of the existing GaN-based optoelectronics. Therefore, it is very interesting to develop low dimensional GaN-based optoelectronics, such as GaN quantum dot based optoelectronic since improved performance is theoretically expected.The proposed programme undertakes a study of the formation, structure and optical properties of nitride quantum dots, and their application to optoelectroic devices: light emitting diodes, laser diodes and photodetectors in the region from ultraviolet to blue. The programme will be carried out in Department of Electronic and Electrical Engineering, the University of Sheffield and will develop state-of-the-art technologies for fabrication of above mentioned GaN-based devices with highly improved performance.

GaN基光电子器件具有广泛的应用前景，包括用于下一代数字多功能光盘（DVD）的短波长激光二极管，用于大规模全色显示和固态照明的蓝/绿色发光二极管，用于生物、化学和环境保护的紫外发光二极管，以及用于红外和热传感器监控的光电探测器等。例如，基于GaN的DVD的存储容量比当前使用的GaAs-DVD的存储容量高大约四倍。GaN基固态照明可以取代目前普遍使用的白炽灯，大大节约能源，寿命更长。然而，由于现有技术的限制，要持续改善现有GaN基光电子器件的性能变得越来越困难。因此，发展低维氮化镓基光电子学，如氮化镓量子点基光电子学是非常有趣的，因为从理论上讲，提高性能是值得期待的。拟议的计划承担氮化物量子点的形成，结构和光学性质的研究，以及它们在光电器件中的应用：发光二极管，激光二极管和光电探测器在紫外到蓝色的区域。该计划将在谢菲尔德大学电子和电气工程系进行，并将开发用于制造上述GaN基器件的最先进技术，并具有高度改进的性能。

项目成果

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

• DOI: 10.1063/1.2790813
• 发表时间: 2007-09
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: J. Bai;Tao Wang;P. Parbrook;Q. Wang;K. B. Lee;A. G. Cullis

Fast spin relaxation in InGaN/GaN multiple quantum wells

InGaN/GaN 多量子阱中的快速自旋弛豫

• DOI: 10.1002/pssb.200565271
• 发表时间: 2006
• 期刊: physica status solidi (b)
• 作者: Brown J

GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates

• DOI: 10.1063/1.2728744
• 发表时间: 2007-05
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: A. Alyamani;D. Sanvitto;A. A. Khalifa-A.;M. S. Skolnick;Tao Wang;F. Ranalli;P. Parbrook;A. Tahraoui;R. Airey

Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures

• DOI: 10.1063/1.3456392
• 发表时间: 2010-06
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. C. Davies;D. Mowbray;F. Ranalli;Tao Wang

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

• DOI: 10.1063/1.3226645
• 发表时间: 2009-09
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert