Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors

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GaN-based optoelectronic devices have been a topic of intense research due to the wide range of applications, including short wavelength laser diodes for next generation digital versatile disk (DVD), blue/green light emitting diodes for large scale full-color displays and solid state lighting as, ultraviolet light emitting diodes for biology, chemistry and environmental protection and photodetectors for fame and heat sensors monitor. For example, the storage capacity of GaN-based DVD is about four time higher than that of currently used GaAs-DVD. The popularly used incandescent lamp can be replaced by GaN-based solidstate lighting, which can greatly save energy and have a much longer life-time. However, due to the limits of the current technology, it is becoming more difficult to continuously improve the performance of the existing GaN-based optoelectronics. Therefore, it is very interesting to develop low dimensional GaN-based optoelectronics, such as GaN quantum dot based optoelectronic since improved performance is theoretically expected.The proposed programme undertakes a study of the formation, structure and optical properties of nitride quantum dots, and their application to optoelectroic devices: light emitting diodes, laser diodes and photodetectors in the region from ultraviolet to blue. The programme will be carried out in Department of Electronic and Electrical Engineering, the University of Sheffield and will develop state-of-the-art technologies for fabrication of above mentioned GaN-based devices with highly improved performance.