Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors

基于氮化镓的光电器件由于其广泛的应用，包括用于下一代数字多功能磁盘（DVD）的短波长激光二极管，用于大规模全彩显示器和固态照明的蓝/绿发光二极管，用于生物、化学和环境保护的紫外线发光二极管以及用于名人和热传感器监测的光电探测器，已经成为人们研究的热点。例如，基于gan的DVD的存储容量大约是目前使用的gaas DVD的四倍。目前普遍使用的白炽灯可以被氮化镓基固态照明取代，可以大大节省能源，使用寿命也更长。然而，由于现有技术的限制，现有gan基光电子器件的性能越来越难以持续改进。因此，开发低维氮化镓基光电子器件是非常有趣的，例如基于氮化镓量子点的光电子器件，因为理论上期望提高性能。拟议的方案研究氮化物量子点的形成、结构和光学特性，以及它们在光电器件上的应用：从紫外线到蓝色区域的发光二极管、激光二极管和光电探测器。该计划将在谢菲尔德大学电子和电气工程系进行，并将开发最先进的技术，用于制造上述性能得到高度改善的基于氮化镓的设备。

GaN-based optoelectronic devices have been a topic of intense research due to the wide range of applications, including short wavelength laser diodes for next generation digital versatile disk (DVD), blue/green light emitting diodes for large scale full-color displays and solid state lighting as, ultraviolet light emitting diodes for biology, chemistry and environmental protection and photodetectors for fame and heat sensors monitor. For example, the storage capacity of GaN-based DVD is about four time higher than that of currently used GaAs-DVD. The popularly used incandescent lamp can be replaced by GaN-based solidstate lighting, which can greatly save energy and have a much longer life-time. However, due to the limits of the current technology, it is becoming more difficult to continuously improve the performance of the existing GaN-based optoelectronics. Therefore, it is very interesting to develop low dimensional GaN-based optoelectronics, such as GaN quantum dot based optoelectronic since improved performance is theoretically expected.The proposed programme undertakes a study of the formation, structure and optical properties of nitride quantum dots, and their application to optoelectroic devices: light emitting diodes, laser diodes and photodetectors in the region from ultraviolet to blue. The programme will be carried out in Department of Electronic and Electrical Engineering, the University of Sheffield and will develop state-of-the-art technologies for fabrication of above mentioned GaN-based devices with highly improved performance.