Research on Blue and Near Ultraviolet Diode Lasers

蓝光及近紫外二极管激光器的研究

• 批准号: 9726938
• 负责人: Arto Nurmikko
• 金额: $ 15万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9726938&HistoricalAwards=false
• 关键词: Research; Blue; Near; Ultraviolet; Diode

9726938 Nurmikko The PI proposes a research program whose objective is to focus on specific areas of basic and applied semiconductor science to aid in the the continued development of the group III-nitride based semiconductor blue lasers and extension of such devices to the near ultraviolet. Further progress in this field of vast technological potential requires systematic scientific efforts. The PI identifies and addresses two critical areas in the proposed program: (a) the study of optical gain and related radiative processes in the nitride quantum wells for optimizing the active region of the laser and implementing a low threshold device design, and (b) development of understanding at a microscopic level of the p-type ohmic contact problem. In addition to the overall idiosyncracies of a widegap semiconductor, both of these problem areas are impacted by the complex and rich microstructure of the nitride heterostructures. In the planned work we thus also look for key links between the crystal microstructure and optoelectronic properties which are presently poorly understood. Apart from our early results on nitride-based diode light emitters, the PI takes advantage of our experience with bluegreen II-VI semiconductor lasers where the issues of gain, device design, and contacts were successfully pursued by the PIs for advancing these quantum well diode devices. Significant differences and distinct challenges do, of course, exist in the nitrides; however, given the common features that are shared by wide bandgap semiconductors at a fundamental level provides a very useful base of comparison for quantitatively and scientifically meaningful comparisons, The proposed research takes advantage of special capabilities and techniques adapted to the study of both nitride-based heterostructures and diode laser devices. For example, advanced laser-based spectroscopic techniques, including ultrafast real-time spectroscopy will be applied to study the optical gain and dynamics of a high density lo w dimensional electron-hole pair in a disordered system such as the InGaN QW where electronic localization effects are important. The techniques include high spatial resolution probes such as near-field optical microscopy. For the p-type contact studies, in-situ deposition of metallization and InN heterostructures in UHV environment is proposed as a means to study the microscopic properties of the metal-nitride interface in order to optimize a low resistance contact for diode laser application. ***

9726938 Nurmikko PI提出了一项研究计划，其目标是专注于基础和应用半导体科学的特定领域，以帮助继续开发基于III族氮化物的半导体蓝色激光器，并将此类设备扩展到近紫外线。 要在这一具有巨大技术潜力的领域取得进一步进展，就需要作出系统的科学努力。 PI确定并解决了两个关键领域提出的计划：（一）光学增益和相关的辐射过程中的氮化物量子威尔斯优化激光器的有源区和实现低阈值器件设计的研究，和（B）在微观层面上的p型欧姆接触问题的理解发展。 除了宽禁带半导体的整体特性之外，这两个问题领域都受到氮化物异质结构的复杂且丰富的微结构的影响。 因此，在计划的工作中，我们还寻找晶体微观结构和光电性能之间的关键联系，目前还不清楚。 除了我们在氮化物基二极管发光体上的早期结果外，PI还利用了我们在蓝绿II-VI半导体激光器方面的经验，PI成功地解决了增益、器件设计和接触问题，以推进这些量子阱二极管器件。 当然，氮化物中确实存在显著的差异和独特的挑战;然而，考虑到宽带隙半导体在基本水平上共享的共同特征，为定量和科学上有意义的比较提供了非常有用的比较基础， 拟议的研究利用特殊的能力和技术，适合于研究氮化物基异质结和二极管激光器件。 例如，先进的基于激光的光谱技术，包括超快实时光谱，将被应用于研究无序系统中高密度低维电子-空穴对的光学增益和动力学，例如InGaN QW，其中电子局域化效应是重要的。 这些技术包括高空间分辨率探针，如近场光学显微镜。 对于p型接触的研究，在超高真空环境中的金属化和InN异质结构的原位沉积，提出了作为一种手段来研究的金属-氮化物界面的微观特性，以优化二极管激光器应用的低电阻接触。 ***