Silicon-based thermoelectric nanosystems

硅基热电纳米系统

基本信息

项目摘要

Thermoelectric (TE) generators directly mounted into the exhaust gas return (EGR) cooler can help to harvest a portion of the huge amount of day-to-day wasted heat. They have to endure constant and cycling temperature loading up to around 500°C, which cannot be fulfilled by Bi2Te3 -based TE material but by silicon. Bulk silicon, however, has a low figure of merit (ZT ~ 0.01) owing to high thermal conductivity. In the first funding period we found that by patterning silicon into nanowires of ~ 200 nm in diameter in combination with a rough nanorod surface thermal conductivity was strongly reduced corresponding to ZT ~ 0.14 at conservative assumptions for the Seebeck coefficient and the resistivity. Further reduction of thermal conductivity and thus improvement towards ZT > 1 resulting in efficiencies necessary for a practical harvesting device (10 to 20 %) is planned for the second funding period which shall be achieved by 1) enhancing the surface-to-volume ratio and thus phonon surface scattering via further reducing the nanowire diameter to < 100 nm or by adding an inner surface (Si nanotube), 2) engineering the nanowire surface for more efficient phonon roughness scattering, 3) integration of multilayer structures into silicon nanowires (Si/SiGe, Si/SiOx, 28Si/29Si) to exploit the effect of heterointerfaces, boundaries, alloys and isotopes on phonon scattering.
直接安装在排气回流(EGR)冷却器中的热电(TE)发电机可以帮助恢复每天浪费的大量热量的一部分。他们必须忍受恒定和骑自行车的温度加载,高达约500°C,而基于BI2TE3的TE材料无法实现,而硅则无法实现。然而,由于导热率很高,大量硅具有低功绩(ZT〜0.01)。在第一个融资期间,我们发现,通过将硅直径构成约200 nm的纳米线,并与粗糙的纳米棒表面热导率相结合,在Seebeck Core的保守假设下,与ZT〜0.14相对应,对应于Seebeck Core的ZT〜0.14。 Further reduction of thermal conductivity and thus improvement towards ZT > 1 resulting in efficiency necessary for a practical harvesting device (10 to 20%) is planned for the second funding period which shall be achieved by 1) enhancing the surface-to-volume ratio and thus phonon surface scattering via further reducing the nanowire diameter to < 100 nm or by adding an inner surface (Si nanotube), 2) engineering the nanowire surface for more有效的声子粗糙度散射,3)将多层结构的整合到硅纳米线中(Si/Sige,Si/Siox,28Si/29si),以利用异性框,边界,合金,同型和同位素对声子散射的影响。

项目成果

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Professor Dr. Karl Brunner其他文献

Professor Dr. Karl Brunner的其他文献

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{{ truncateString('Professor Dr. Karl Brunner', 18)}}的其他基金

Molecular beam epitaxy and magnetotransport of manganese monosilicide layers on (111) silicon substrates
(111) 硅衬底上单硅化锰层的分子束外延和磁输运
  • 批准号:
    234487974
  • 财政年份:
    2013
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Ferromagnetismus in dünnen verspannten III-V-Halbleiterschichtsystemen
薄应变 III-V 半导体层系统中的铁磁性
  • 批准号:
    63976680
  • 财政年份:
    2008
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Molekularstrahl-Epitaxie Mn-haltiger III-V-Heterostrukturen
含Mn III-V族异质结构的分子束外延
  • 批准号:
    5342166
  • 财政年份:
    2001
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Lichtemission von Intrabandübergängen in Si/SiGe-Heterostrukturen
Si/SiGe 异质结构中带内跃迁的光发射
  • 批准号:
    5168560
  • 财政年份:
    1999
  • 资助金额:
    --
  • 项目类别:
    Research Grants

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