Measurements and Modeling of Noise in Next Generation Sub-Micron MOSFETs

下一代亚微米 MOSFET 中的噪声测量和建模

• 批准号: 9732663
• 负责人: Zeynep Celik-Butler
• 金额: $ 13.71万
• 依托单位: Southern Methodist University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-06-01 至 2001-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9732663&HistoricalAwards=false
• 关键词: Measurements; Modeling; Noise; Next; Generation

9732663Celik-BulterThe Semiconducting Research Corporation (SRC) has identified noise modeling of sub-micron Metal Oxide-Semiconductor Field-Effect Transistors (MOSFETs) as one of most urgent short term research needs for 1997-98. As devices shrink, frequencies increase, and voltages reduce, the need to understand the noise sources in new generation MOSFETs becomes more and more important in order to design and gavricate devices with acceptable performance characteristics. Noise models developed for large area devices based on the large-number-the device, beyond a certain limit of scaling down, with existing models, it becomes impossible to predict the noise performance of an individual transistor, specifically a MOSFET. The lack of accurate models leads the process and to significant waste of valuable time. There is a need to measure and understand the sources of noise(all kinds and wide frequency range) exhibited by deep-submicron MOSFETs.***

Celik-Bulter半导体研究公司（SRC）已经确定亚微米金属氧化物半导体场效应晶体管（MOSFET）的噪声建模是1997-98年最迫切的短期研究需求之一。 随着器件尺寸缩小、频率提高和电压降低，了解新一代MOSFET中的噪声源变得越来越重要，以便设计和制造具有可接受性能特性的器件。 噪声模型开发的大面积设备的基础上的大数字-设备，超过一定的限制，缩小，与现有的模型，它变得不可能预测的噪声性能的个别晶体管，特别是MOSFET。 缺乏准确的模型导致了这一过程，并浪费了宝贵的时间。 需要测量和了解深亚微米MOSFET的噪声源（各种类型和宽频率范围）。***