Measurements and Modeling of Noise in Next Generation Sub-Micron MOSFETs

半导体研究公司（SRC）已经确定亚微米金属氧化物半导体场效应晶体管（mosfet）的噪声建模是1997-98年最紧迫的短期研究需求之一。随着器件体积的缩小、频率的增加和电压的降低，了解新一代mosfet中的噪声源的需求变得越来越重要，以便设计和制造具有可接受性能特征的器件。针对基于大数字器件的大面积器件开发的噪声模型，超过一定的缩小限制，使用现有模型，就不可能预测单个晶体管（特别是MOSFET）的噪声性能。缺乏准确的模型导致了这个过程，并浪费了宝贵的时间。有必要测量和了解深亚微米mosfet所显示的噪声源（各种和宽频率范围）

9732663Celik-BulterThe Semiconducting Research Corporation (SRC) has identified noise modeling of sub-micron Metal Oxide-Semiconductor Field-Effect Transistors (MOSFETs) as one of most urgent short term research needs for 1997-98. As devices shrink, frequencies increase, and voltages reduce, the need to understand the noise sources in new generation MOSFETs becomes more and more important in order to design and gavricate devices with acceptable performance characteristics. Noise models developed for large area devices based on the large-number-the device, beyond a certain limit of scaling down, with existing models, it becomes impossible to predict the noise performance of an individual transistor, specifically a MOSFET. The lack of accurate models leads the process and to significant waste of valuable time. There is a need to measure and understand the sources of noise(all kinds and wide frequency range) exhibited by deep-submicron MOSFETs.***