Low-Frequency Noise Measurements as a Characterization and-Testing Tool in Solid-State Devices

低频噪声测量作为固态器件的表征和测试工具

• 批准号: 9116209
• 负责人: Zeynep Celik-Butler
• 金额: $ 20.5万
• 依托单位: Southern Methodist University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9116209&HistoricalAwards=false
• 关键词: Low; Frequency; Noise; Measurements; Characterization

The proposal describes a new of nondestructive testing and characterization for semiconductor and high Tc superconductor devices. The technique involves Low- Frequency Noise (LFN) measurements performed at different temperatures and bias conditions to characterize the mechanism(s) generating these fluctuations. Measurements on three different devices are proposed here. The first one involves that characterization of electromigration parameters and prediction of the life-times in VLSI metallization layers and vias. By performing LFN measurements in accelerated electromigration (EM) conditions such as elevated temperatures and at stressing current densities, one can evaluate the EM parameters like activation energy and current exponent. Then, these parameters are used to establish a correlation between the life-time of the metallization layer and the LFN the film exhibits, which in turn can be used as a predictor of life-time. These measurements will be performed on multi-layer metallization layers of TiW/W/A1 and via/stud structures. Secondly, LFN measurements will be utilized to characterize YBaa2CU3O7-8 thin films and to determine the quality of the film related to its composition, crystallinity, Resistance- Temperature (R-T) characteristics, and the critical current. LFN measurements will be performed also on HgCdTe MIS photodiodes to characterize the insulator-semiconductor interface and to enhance the noise performance of these devices as infrared detectors. The significance of the noise characterization techniques lies in their ease, flexibility and most important of all, nondestructiveness.

该提案描述了一种新的 无损检测和表征 半导体和高温超导体 装置. 该技术涉及低- 频率噪声（LFN）测量 在不同的温度和偏压下进行 表征机制的条件 产生这些波动。 测量 在这里提出了三种不同的设备。 第一个是关于 电迁移参数及预测 VLSI金属化层的寿命， 通孔。 通过执行LFN测量， 加速电迁移（EM）条件 例如升高的温度和应力 电流密度，可以评估EM 激活能和电流等参数 指数 然后，这些参数用于 建立一个生命周期之间的相关性 金属化层和LFN膜 展览，反过来又可以作为一个 寿命的预测。 这些测量 将在多层金属化上进行 TiW/W/Al层和通孔/螺柱结构。 其次，将利用LFN测量 表征YBaa 2Cu 3 O 7 -8薄膜， 确定与其相关的电影质量 组成、结晶度、电阻- 温度（R-T）特性， 临界电流 LFN测量也将在 HgCdTe MIS光电二极管来表征 绝缘体-半导体界面 提高噪音性能， 红外线探测器。 噪声特性的重要性 技术在于其易用性，灵活性和 最重要的是，非破坏性。