Low-Frequency Noise Measurements as a Characterization and-Testing Tool in Solid-State Devices

低频噪声测量作为固态器件的表征和测试工具

• 批准号: 9116209
• 负责人: Zeynep Celik-Butler
• 金额: $ 20.5万
• 依托单位: Southern Methodist University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1995-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9116209&HistoricalAwards=false
• 关键词: Low; Frequency; Noise; Measurements; Characterization

The proposal describes a new of nondestructive testing and characterization for semiconductor and high Tc superconductor devices. The technique involves Low- Frequency Noise (LFN) measurements performed at different temperatures and bias conditions to characterize the mechanism(s) generating these fluctuations. Measurements on three different devices are proposed here. The first one involves that characterization of electromigration parameters and prediction of the life-times in VLSI metallization layers and vias. By performing LFN measurements in accelerated electromigration (EM) conditions such as elevated temperatures and at stressing current densities, one can evaluate the EM parameters like activation energy and current exponent. Then, these parameters are used to establish a correlation between the life-time of the metallization layer and the LFN the film exhibits, which in turn can be used as a predictor of life-time. These measurements will be performed on multi-layer metallization layers of TiW/W/A1 and via/stud structures. Secondly, LFN measurements will be utilized to characterize YBaa2CU3O7-8 thin films and to determine the quality of the film related to its composition, crystallinity, Resistance- Temperature (R-T) characteristics, and the critical current. LFN measurements will be performed also on HgCdTe MIS photodiodes to characterize the insulator-semiconductor interface and to enhance the noise performance of these devices as infrared detectors. The significance of the noise characterization techniques lies in their ease, flexibility and most important of all, nondestructiveness.

提出了一种新的半导体和高Tc超导体器件的无损检测和表征方法。该技术涉及在不同温度和偏置条件下进行的低频噪声（LFN）测量，以表征产生这些波动的机制。这里提出了三种不同设备的测量方法。第一个部分涉及超大规模集成电路金属化层和过孔中电迁移参数的表征和寿命的预测。通过在加速电迁移（EM）条件下（如高温和应力电流密度下）进行LFN测量，可以评估活化能和电流指数等EM参数。然后，这些参数被用来建立金属化层的寿命与薄膜显示的LFN之间的相关性，这反过来又可以用作寿命的预测因子。这些测量将在TiW/W/A1和通孔/螺柱结构的多层金属化层上进行。其次，LFN测量将用于表征YBaa2CU3O7-8薄膜，并确定与其组成，结晶度，电阻-温度（R-T）特性相关的薄膜质量。临界电流。LFN测量也将在HgCdTe MIS光电二极管上进行，以表征绝缘体-半导体界面，并增强这些设备作为红外探测器的噪声性能。噪声表征技术的意义在于其简单、灵活，最重要的是无损性。