Acquisition of Laser Ablation Deposition System

9601791 Celik-Butler启用激光烧蚀沉积系统（LAD）的获取。 与溅射和电子束蒸发等其它可用技术相比，LAD已被证明是一种用于制造复合氧化物薄膜的上级沉积技术。 LAD将被放置在固态技术实验室，该实验室具有半导体器件制造能力，包括Si-MOS，Si微加工和半导体激光器。 拟议的LAD系统将成为北德克萨斯州地区唯一的LAD系统。 LAD系统将主要用于存款半导体YBaCuO薄膜的应用程序作为非制冷微测辐射热计和半绝缘YBaCuO薄膜的应用程序作为非制冷热释电探测器。 这项工作得到了NSF，ARO和Texas Instruments的支持。 拟议法援署系统工程计划的费用为275，000元，其中45%的费用由新航联分担。 YBaCuO以其超导特性而闻名。 然而最近，YBaCuO的非超导相被证明在许多应用中是有用的，包括非制冷红外（IR）检测，光的二次谐波产生和光电导开关。 这些材料是有吸引力的，因为它们在组成和性质上稳定并且易于存款。 YBaCuO的一个相是YBa 2Cu 3 O 6 +x。 当x从0增加到1时，YBa 2Cu 3 O 6 +x从具有明确定义的能隙的绝缘体演变为费米玻璃，然后通过金属-绝缘体转变为金属。 同时，晶格从四方晶系转变为正交晶系。 因此，氧含量决定了材料的电学和光学性质。 YBa_2Cu_3O_（6 +x）是一种具有热释电性质的铁电材料。 在半绝缘阶段，它具有低漏电流，因此适合作为非制冷热释电探测器的应用。 在半导体相中，YBa_2Cu_3O_（6 +x）具有窄的带隙、低的1/f噪声和电阻率随温度的大变化（TCR=3.9%），适合作为非致冷测辐射热计。 我们的初步研究表明，半导体YBa_2Cu_3 O_（6 +x）非致冷测辐射热计比致冷超导YBa_2Cu_3 O_（6 +x）测辐射热计具有更高的响应率（Rv = 6 × 104 V/W）和探测率。 此外，它们的性能上级其他非制冷红外探测器，包括VO 2测辐射热计和PbTiO 3热释电探测器。 到目前为止，半导体YBa 2Cu 3 O 6 +x红外敏感材料已通过简单的射频溅射在室温下到Si，SiO2和Si 3 N4衬底上，显示材料的兼容性与CMOS工艺对微机械加工，未冷却的微测辐射热计阵列的制造与焦平面信号处理导致在低成本的红外成像电路。 我们相信，控制的化学计量的YBa_2Cu_3O_（6 +x）薄膜将显着改善使用的薄膜制造的LAD。 这将允许更大的再现性并允许优化化学计量以产生甚至更好的性能。 因此，购置LAD系统将给项目带来巨大好处。 此外，LAD系统将提高实验室的能力，允许未来的研究项目，在制造具有线性和非线性电光特性的复合氧化物薄膜。 在这一领域的工作将补充半导体激光器组，并允许集成光学器件的制造。 此外，亦会开展铁电复合氧化物应用于硅器件的项目，例如DRAM的栅极绝缘体。 由于拟议的系统将是北德克萨斯州唯一的LAD系统，预计其他研究人员将被吸引到该设施。 SMU的教师与德克萨斯大学阿灵顿分校、德克萨斯大学达拉斯分校和北德克萨斯大学的教师有着非常好的合作关系。 此外，大量的公司参与了在达拉斯英尺的Si和GaAs器件的制造。Worth metroplex可能需要访问LAD系统以测试某些概念。 外部用户很可能会发现已建成的设施具有吸引力。 ***

9601791 Celik-Butler The acquisition of a Laser Ablation Deposition system (LAD) is enabled. LAD has been demonstrated as a superior deposition technique for the fabrication of compound oxide thin films as compared to other available techniques such as sputtering and e-beam evaporation. The LAD will be placed in the Solid State Technology Laboratory which has the capability for semiconductor device fabrication including Si-MOS, Si micromachining, and semiconductor lasers. The proposed LAD system will become the only LAD system in the North Texas region. The LAD system will be primarily used to deposit semiconducting YBaCuO thin films for application as uncooled microbolometers and semi-insulating YBaCuO thin films for application as uncooled pyroelectric detectors. This work is supported by the NSF, ARO and Texas Instruments. The cost of the proposed LAD system project is $275,000 of which SMU will provide a 45% cost share. YBaCuO is well known for its superconducting properties. However more recently, the nonsuperconducting phases of YBaCuO are demonstrating themselves useful in a number of applications including uncooled infrared (IR) detection, the second harmonic generation of light, and photoconductive switching. The materials are attractive since they are stable in composition and properties and easy to deposit. One of the phases of YBaCuO is YBa2Cu3O6+x. As x is increased from 0 to 1, YBa2Cu3O6+x evolves from an insulator with a well-defined energy gap to a Fermi glass, and then through a metal-insulator transition to a metal. Simultaneously, the crystal lattice changes from tetragonal to orthorhombic. The oxygen content thereby determines the electrical and optical properties of a material. YBa2Cu3O6+x is a ferroelectric material with pyroelectric properties. In the semi-insulating phase, it has a low leakage current and is therefore suitable for application as an uncooled pyroelectric detector. In the semi-conducting phase, YBa2Cu3O6+x has a narrow band-gap, inheren tly low 1/f noise and a large change in resistivity with temperature (TCR=3.9%) making it suitable as an uncooled bolometer. Our preliminary investigations have shown that semiconducting YBa2Cu3O6+x uncooled bolometers offer higher responsivities (Rv = 6x104V/W) and detectivities than cooled superconducting YBa2Cu3O6+x bolometers. In addition, their performance is superior to other uncooled IR detectors including VO2 bolometers and PbTiO3 pyroelectric detectors. To date, the semiconducting YBa2Cu3O6+x IR sensitive material has been fabricated by simple rf sputtering at room temperature onto Si, SiO2 and Si3N4 substrates, showing material compatibility with a CMOS process towards the fabrication of micromachined, uncooled microbolometer arrays with focal plane signal processing resultant in a low cost IR imaging circuit. We believe that control over the stoichiometry of the YBa2Cu3O6+x thin films would be significantly improved by the use of LAD for the thin film fabrication. This would allow for greater reproducibility and allow for the stoichiomery to be optimized to produce even better performance. Therefore the acquisition of a LAD system would be a tremendous benefit to the project. Further, an LAD system would improve the capability of the laboratory allowing for future research projects in the fabrication of compound oxide thin films with linear and nonlinear electro-optic properties. Work in this area would compliment the semiconductor laser group and allow for the fabrication of integrated optic devices. In addition, projects would be initiated on the application of ferroelectric compound oxides to Si devices such as the gate insulator in DRAMs. Since, the proposed system will be the only LAD system in North Texas, it is anticipated other researchers will be attracted to the facility. Faculty at SMU have a very cooperative relationship with faculty at the University of Texas at Arlington, the University of Texas at Dallas, and the University of North Texas. In addition, a large number of companies are involved in the fabrication of Si and GaAs devices in the Dallas-Ft. Worth metroplex which may need access to a LAD system to test some concepts. The probability is high that external users will find the facility attractive one established. ***