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NANOSCALE: Hybridization Based Assembly of Silicon Electronic Devices

NANOSCALE: Hybridization Based Assembly of Silicon Electronic Devices
纳米尺度:基于杂交的硅电子器件组装
批准号:
9986569
负责人:
Rashid Bashir
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-02-15 至 2002-01-31

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英文摘要
9986569Rashid BashirIn this proposal, new approaches towards the development of future hybrid bio-electronic devices and systems are proposed. The main theme is to use the hybridization and specificity of DNA oligonucleotides to result in the assembly of useful silicon devices. Novel silicon-in-insulator and selective epitaxial processing techniques will be used to fabricate silicon based active (diodes and transistors) devices. These devices will then be 'released' from their host substrate into a surrounding liquid medium. Single stranded DNA molecules will be attached at specific locations on these devices. Meanwhile, a substrate will be prepared with 2-D (or 3-D) interconnect layers. These layers will also be functionalized with short single stranded oligonucleotides. The free-floating active devices will be released onto the patterned/functionalized substrate along with oligonucleotides, which will complementarily bind and connect the two molecules on the substrate and the device. Using thermal energy, these silicon devices will then self-assemble onto the interconnect layers, as dictated by the hybridization of the complementary strands of DNA.
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