NANOSCALE: Hybridization Based Assembly of Silicon Electronic Devices

纳米尺度：基于杂交的硅电子器件组装

• 批准号: 9986569
• 负责人: Rashid Bashir
• 金额: $ 10万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-02-15 至 2002-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9986569&HistoricalAwards=false
• 关键词: NANOSCALE; Hybridization; Based; Assembly; Silicon

9986569Rashid BashirIn this proposal, new approaches towards the development of future hybrid bio-electronic devices and systems are proposed. The main theme is to use the hybridization and specificity of DNA oligonucleotides to result in the assembly of useful silicon devices. Novel silicon-in-insulator and selective epitaxial processing techniques will be used to fabricate silicon based active (diodes and transistors) devices. These devices will then be 'released' from their host substrate into a surrounding liquid medium. Single stranded DNA molecules will be attached at specific locations on these devices. Meanwhile, a substrate will be prepared with 2-D (or 3-D) interconnect layers. These layers will also be functionalized with short single stranded oligonucleotides. The free-floating active devices will be released onto the patterned/functionalized substrate along with oligonucleotides, which will complementarily bind and connect the two molecules on the substrate and the device. Using thermal energy, these silicon devices will then self-assemble onto the interconnect layers, as dictated by the hybridization of the complementary strands of DNA.

9986569 Rashid Bashir在该提案中，提出了开发未来混合生物电子设备和系统的新方法。主要的主题是利用DNA寡核苷酸的杂交和特异性来组装有用的硅器件。新型绝缘体中硅和选择性外延工艺技术将用于制造硅基有源（二极管和晶体管）器件。然后，这些器件将从它们的主衬底“释放”到周围的液体介质中。单链DNA分子将附着在这些设备上的特定位置。同时，将制备具有2-D（或3-D）互连层的衬底。这些层也将用短单链寡核苷酸官能化。自由浮动有源器件将与寡核苷酸一起沿着释放到图案化/功能化衬底上，所述寡核苷酸将互补地结合并连接衬底和器件上的两个分子。利用热能，这些硅器件将自组装到互连层上，这是由DNA互补链的杂交决定的。