课题基金 / 基金详情

Development of Instrumentation for Combined Secondary Ion Mass Spectrometry, Cathodoluminescence Spectroscopy, and Chemical Processing

Development of Instrumentation for Combined Secondary Ion Mass Spectrometry, Cathodoluminescence Spectroscopy, and Chemical Processing
二次离子质谱、阴极发光光谱和化学加工组合仪器的开发
批准号:
0079438
负责人:
Leonard Brillson
金额:
$78.9万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-09-01 至 2005-06-30

项目摘要

项目成果

Leonard Brillson的其他基金

相似基金

相关文献

中文摘要
翻译
次级离子质谱(SIMS)、阴极发光光谱(CLS)和高温/高压处理(HTP)仪器的组合将提供固态材料的耦合化学和电子分析。它将以最先进的技术检测微量元素及其对固体电子特性的影响。它将使:(1)空间分辨率为100纳米,可探测性小于10-100亿分之一的一步完成元素的地形测绘和化学鉴定;(2)利用材料表面以下深度的函数进行化学分析,以探测埋藏层、杂质和化学反应产物,可探测性小于10亿分之一;(3)空间分辨率为20纳米,检出率小于十亿分之十的相同体积材料的阴极发光定位和局域态和能带结构的电子识别;(4)在超高真空条件下通过控制加热和表面化学反应制备和分析先进的微电子、光电和电化学材料结构。该仪器将用于培养学生在电子材料、陶瓷传感器、金属腐蚀、碳基电化学和发光有机材料等领域进行基础和跨学科研究。许多固体材料的电子、化学和机械性能敏感地取决于其表面或表面附近的特定原子的存在。例如,即使是微量的这种原子也能极大地改变计算机半导体晶体管的开关方式,汽车陶瓷传感器检测气体的方式,飞机涡轮叶片的抗腐蚀能力,甚至塑料薄膜发光的效率。SIMS-CLS-CP仪器将能够检测和识别固体材料中存在的所有原子,即使特定元素的浓度仅为十亿原子中的10个原子。为了实现这一点,仪器用带电原子轰击材料,从目标固体中弹出并分析其他原子。该仪器将提供存在的每种元素及其浓度的三维地图。一束电子束将轰击同一目标区域,产生光波图,其波长揭示了电子特性,特别是固体携带电力和将一种形式的能量转化为另一种形式的能力。这些重叠的化学和电子地图的特征尺寸小于几百个原子的平方。该仪器将在分析站和处理站之间传送材料,在不同的气体中加热材料,产生化学反应,并测量产生的新物理性质。除了研究之外,该仪器还将用于培养学生在材料科学与技术方面的能力。
英文摘要
0079438BrillsonThe combined secondary ion mass spectrometry (SIMS), cathodoluminescence spectroscopy (CLS), and high temperature/pressure processing (HTP) instrumentation will provide coupled chemical and electronic analysis of solid state materials. It will operate at the state-of-the-art in detection of trace elements and their influence on electronic properties in solids. It will enable: (1) topographical mapping and chemical identification of elements in one step with spatial resolution of 100 nanometers and detectability of less than 10-100 parts per billion, (2) chemical analysis as a function of depth below a material's surface to detect buried layers, impurities, and products of chemical reactions with a detectability of less than 10 parts per billion, (3) cathodoluminescence mapping and electronic identification of localized states and band structure of the same volume of material with spatial resolution of 20 nanometers and detectability of less than 10 parts per billion, (4) fabrication and analysis of advanced microelectronic, optoelectronic, and electrochemical materials structures by controlled heating and surface chemical reactions under ultrahigh vacuum conditions. The instrument will be used to train students to perform fundamental and interdisciplinary research in areas as diverse as electronic materials, ceramic sensors, metal corrosion, carbon-based electrochemistry, and light emitting organic materials.%%%The electronic, chemical, and mechanical performance of many solid materials can depend sensitively on the presence of particular atoms on or near their surfaces. For example, even trace amounts of such atoms can dramatically change how a computer's semiconductor transistors switch, how a car's ceramic sensors detect gases, how resistant an aircraft's turbine blades are to corrosion, or even how efficiently a plastic film can emit light. The SIMS-CLS-CP instrument will be able to detect and identify all the atoms present in solid materials, even if a particular element's concentration amounts to only 10 atoms out of a billion. To accomplish this, the instrument bombards the material with charged atoms to eject and analyze other atoms from the target solid. The instrument will provide three-dimensional maps of each element present and its concentration. A beam of electrons will bombard the same target area to produce maps of light whose wavelengths reveal electronic properties, especially how well the solid carries electricity and transforms one form of energy into another. The feature size of these overlapping chemical and electronic maps is less than a few hundred atoms square. The instrument will shuttle materials between analysis and processing stations for heating materials in different gases, producing chemical reactions, and measuring the new physical properties that result. Besides research, the instrument will also serve to train students in materials science and technology.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Defects and Dopants in Critical Wide Band Gap Semiconductors - ZnO, InGaZnO, Ga2O3 and ScN
  • 批准号:
    1800130
  • 项目类别:
    Standard Grant
  • 资助金额:
    $36.3万
  • 财政年份:
    2018
  • 负责人:
    Leonard Brillson
  • 依托单位:
Native Point Defects, Electronically Active Impurities, and Plasmonics at ZnO Interfaces
  • 批准号:
    1305193
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $55.66万
  • 财政年份:
    2013
  • 负责人:
    Leonard Brillson
  • 依托单位:
Localized States, Chemical Reactions, and Charge Transport at ZnO Surfaces and Interfaces
GOALI: Growth-Dependent Identification and Control of Bulk and Interface Defects in ZnO
海外基金