Development of Instrumentation for Combined Secondary Ion Mass Spectrometry, Cathodoluminescence Spectroscopy, and Chemical Processing
二次离子质谱、阴极发光光谱和化学加工组合仪器的开发
基本信息
- 批准号:0079438
- 负责人:
- 金额:$ 78.9万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2000
- 资助国家:美国
- 起止时间:2000-09-01 至 2005-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0079438BrillsonThe combined secondary ion mass spectrometry (SIMS), cathodoluminescence spectroscopy (CLS), and high temperature/pressure processing (HTP) instrumentation will provide coupled chemical and electronic analysis of solid state materials. It will operate at the state-of-the-art in detection of trace elements and their influence on electronic properties in solids. It will enable: (1) topographical mapping and chemical identification of elements in one step with spatial resolution of 100 nanometers and detectability of less than 10-100 parts per billion, (2) chemical analysis as a function of depth below a material's surface to detect buried layers, impurities, and products of chemical reactions with a detectability of less than 10 parts per billion, (3) cathodoluminescence mapping and electronic identification of localized states and band structure of the same volume of material with spatial resolution of 20 nanometers and detectability of less than 10 parts per billion, (4) fabrication and analysis of advanced microelectronic, optoelectronic, and electrochemical materials structures by controlled heating and surface chemical reactions under ultrahigh vacuum conditions. The instrument will be used to train students to perform fundamental and interdisciplinary research in areas as diverse as electronic materials, ceramic sensors, metal corrosion, carbon-based electrochemistry, and light emitting organic materials.%%%The electronic, chemical, and mechanical performance of many solid materials can depend sensitively on the presence of particular atoms on or near their surfaces. For example, even trace amounts of such atoms can dramatically change how a computer's semiconductor transistors switch, how a car's ceramic sensors detect gases, how resistant an aircraft's turbine blades are to corrosion, or even how efficiently a plastic film can emit light. The SIMS-CLS-CP instrument will be able to detect and identify all the atoms present in solid materials, even if a particular element's concentration amounts to only 10 atoms out of a billion. To accomplish this, the instrument bombards the material with charged atoms to eject and analyze other atoms from the target solid. The instrument will provide three-dimensional maps of each element present and its concentration. A beam of electrons will bombard the same target area to produce maps of light whose wavelengths reveal electronic properties, especially how well the solid carries electricity and transforms one form of energy into another. The feature size of these overlapping chemical and electronic maps is less than a few hundred atoms square. The instrument will shuttle materials between analysis and processing stations for heating materials in different gases, producing chemical reactions, and measuring the new physical properties that result. Besides research, the instrument will also serve to train students in materials science and technology.
0079438 Brillson二次离子质谱(西姆斯)、阴极发光光谱(CLS)和高温/高压处理(HTP)仪器的组合将提供固态材料的化学和电子分析。 它将在检测痕量元素及其对固体电子性质的影响方面发挥最先进的作用。 它将使:(1)以100纳米的空间分辨率和小于10-100 ppm的可检测性在一个步骤中进行元素的地形测绘和化学识别,(2)作为材料表面以下深度的函数的化学分析,以检测埋层、杂质和具有小于10 ppm的可检测性的化学反应产物,(3)阴极发光绘图和电子识别相同体积材料的局域态和能带结构,空间分辨率为20纳米,可探测性小于十亿分之十,(4)先进微电子,光电,和电化学材料结构通过受控加热和表面化学反应在超真空条件下。 该仪器将用于培养学生在电子材料,陶瓷传感器,金属腐蚀,碳基电化学和发光有机材料等领域进行基础和跨学科研究。许多固体材料的电子、化学和机械性能可能敏感地取决于其表面上或附近的特定原子的存在。例如,即使是微量的这种原子也能极大地改变计算机半导体晶体管的开关方式,汽车陶瓷传感器检测气体的方式,飞机涡轮机叶片的耐腐蚀性,甚至塑料薄膜发光的效率。 SIMS-CLS-CP仪器将能够检测和识别固体材料中存在的所有原子,即使特定元素的浓度仅为十亿分之十。 为了实现这一点,仪器用带电原子轰击材料,以从目标固体中喷射和分析其他原子。该仪器将提供存在的每种元素及其浓度的三维图。一束电子将轰击同一个目标区域,产生光的地图,其波长揭示了电子特性,特别是固体如何携带电力并将一种形式的能量转化为另一种形式。 这些重叠的化学和电子图的特征尺寸小于几百个原子的平方。 该仪器将在分析和处理站之间穿梭材料,以加热不同气体中的材料,产生化学反应,并测量产生的新物理特性。除了研究,该仪器还将用于培养学生的材料科学和技术。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Leonard Brillson其他文献
Leonard Brillson的其他文献
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{{ truncateString('Leonard Brillson', 18)}}的其他基金
Collaborative Research: Defects and Dopants in Critical Wide Band Gap Semiconductors - ZnO, InGaZnO, Ga2O3 and ScN
合作研究:关键宽带隙半导体中的缺陷和掺杂剂 - ZnO、InGaZnO、Ga2O3 和 ScN
- 批准号:
1800130 - 财政年份:2018
- 资助金额:
$ 78.9万 - 项目类别:
Standard Grant
Native Point Defects, Electronically Active Impurities, and Plasmonics at ZnO Interfaces
ZnO 界面上的本征点缺陷、电子活性杂质和等离激元
- 批准号:
1305193 - 财政年份:2013
- 资助金额:
$ 78.9万 - 项目类别:
Continuing Grant
Localized States, Chemical Reactions, and Charge Transport at ZnO Surfaces and Interfaces
ZnO 表面和界面的局域态、化学反应和电荷传输
- 批准号:
0803276 - 财政年份:2008
- 资助金额:
$ 78.9万 - 项目类别:
Standard Grant
GOALI: Growth-Dependent Identification and Control of Bulk and Interface Defects in ZnO
目标:ZnO 中体相和界面缺陷的生长依赖性识别和控制
- 批准号:
0513968 - 财政年份:2005
- 资助金额:
$ 78.9万 - 项目类别:
Continuing Grant
ACT-SGER: Charge Exchange and Chemical Structure at Protein-Semiconductor Interfaces
ACT-SGER:蛋白质-半导体界面的电荷交换和化学结构
- 批准号:
0346428 - 财政年份:2003
- 资助金额:
$ 78.9万 - 项目类别:
Standard Grant
FRG: Morphological Electronic and Chemical Structure of Lattice-Mismatched III-V Heterojunctions
FRG:晶格失配 III-V 异质结的形态电子结构和化学结构
- 批准号:
0076362 - 财政年份:2000
- 资助金额:
$ 78.9万 - 项目类别:
Continuing Grant
Interface Electronic Properties and Growth Parameters of Heterovalent Semiconductor Heterojunctions
异价半导体异质结的界面电子性质和生长参数
- 批准号:
9711851 - 财政年份:1997
- 资助金额:
$ 78.9万 - 项目类别:
Standard Grant
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