Laser-effected Ultra-large Grain Growth and Device Fabrication in Silicon Thin Films

硅薄膜中的激光效应超大晶粒生长和器件制造

• 批准号: 0118366
• 负责人: Costas Grigoropoulos
• 金额: $ 22.5万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-08-01 至 2004-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0118366&HistoricalAwards=false
• 关键词: Laser; effected; Ultra; large; Grain

0118366GrigoropoulosThe work is focused on laser-driven crystal growth in thin semiconductor films for fabricating thin film transistors (TFTs) utilized in large area electronics including high-definition flat panel displays. The goal is to achieve production of device-quality polycrystalline material through one-step manufacturing process with superior control of the single crystal growth location, orientation and size. The temporal and spatial distribution of the rapidly changing temperature field and solid/liquid interface propagation will be investigated at the microscale level. The following tasks will be carried out:1) One-step production of single crystal regions that are sufficiently large for fabricating TFTs via the novel double laser recrystallization technique. A new laser-based processing tool will be developed and instrumented for advanced process control and enhanced throughput. Schemes involving processing of patterned regions in conjunction with spatially modified beam profiles will be tested.2) Fabrication and characterization of TFTs on the produced poly-Si films in order to examine the quality of the poly-Si and hence evaluate the effectiveness of the controlled laser recrystallization and lateral crystal growth process. The results will be utilized to identify optimal combinations of the laser beam parameters and pattern configurations.3) Design and implementation of a new temporally and spatially resolved microscale temperature measurement technique based on thermal emission. The measured temperature distribution in conjunction with direct in-situ imaging will provide information on the microstructural evolution including the quenching rate, the degree of supercooling, the nucleation temperature and the solid/liquid interface velocity. The experimental findings will enable construction of validated and accurate computational models of the complex phase transformation process. These models will be then used for improving the process sequence.

[01:18366] grigoropoulos这项工作的重点是在薄半导体薄膜中激光驱动晶体生长，用于制造薄膜晶体管（tft），用于包括高清平板显示器在内的大面积电子产品。目标是通过对单晶生长位置、取向和尺寸的优越控制，通过一步制造工艺实现器件级多晶材料的生产。在微观尺度上研究了快速变化的温度场和固/液界面传播的时空分布。本课题将进行以下工作：1)利用新型双激光再结晶技术一步制备出足够大的单晶区域。将开发一种新的基于激光的加工工具，并将其用于先进的过程控制和提高吞吐量。将测试涉及处理图案化区域与空间修改光束轮廓的方案。2)在制备的多晶硅薄膜上制备和表征tft，以检查多晶硅的质量，从而评估受控激光再结晶和横向晶体生长过程的有效性。研究结果将用于确定激光束参数和模式配置的最佳组合。3)基于热发射的时空分辨微尺度温度测量新技术的设计与实现。测量的温度分布结合直接原位成像将提供微观组织演变的信息，包括淬火速率、过冷程度、成核温度和固/液界面速度。实验结果将使复杂相变过程的验证和准确的计算模型的构建成为可能。然后，这些模型将用于改进流程序列。