RUI: Issues in Ultra Thin Film Growth on Group IV Semiconductors

这个RUI项目是一个关于在第四族半导体表面，即硅和锗上生长薄膜的两个问题的合作研究。布拉德利大学的四名研究人员将研究在硅单晶表面上超薄金属薄膜的生长和表征，以及在极低热预算条件下在Si（100）和Ge（100）表面上电子和光子辅助沉积SiGe合金薄膜。要探讨的问题包括硅上超薄金属薄膜的导电性，以及可能在这种薄膜中产生高电流密度的电迁移效应。此外，电子和光子驱动吸附过程的基本问题可能作为SiGe合金薄膜生长的前驱体将被研究。该项目涉及具有技术相关性的材料科学主题领域的基础研究问题。本科生将在该项目中发挥主要作用，有机会直接将研究整合到他们的学术课程中。该研究项目将为本科生提供最先进的表面科学设备和独特的机会，以参与和发展纳米级材料科学领域的令人兴奋的技能。该项目的一个重要特点是非常重视教育，并将研究与教育相结合。＊＊＊

This RUI project is a collaborative study of two issues in growth of thin films on Group IV semi-conductor surfaces, i.e., on silicon and germanium. A team of four researchers at Bradley Univer-sity will address growth and characterization of ultra thin metallic films on silicon single crystal surfaces, and electron and photon assisted deposition of SiGe alloy films on Si(100) and Ge(100) surfaces under very low thermal budget conditions. Issues to be explored include electrical con-ductivity in ultra-thin metallic films on silicon as well as electromigration effects which may ac-company high current densities in such films. Also, fundamental issues of electron and photon driven processes in adsorbates which may serve as precursors to growth of SiGe alloy films will be studied. %%% The project addresses fundamental research issues in topical areas of materials science having technological relevance. Undergraduate students will play a primary role in the project, with op-portunities for research integrated directly into their academic program. The research program will provide access to state-of-the-art surface science equipment and unique opportunities for un-dergraduates to participate in and develop skills in exciting areas of materials science at the na-noscale level. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***