RUI: Issues in Ultra Thin Film Growth on Group IV Semiconductors

RUI项目是关于在第四类半导体表面上生长薄膜的两个问题的合作研究，即在硅和锗上生长薄膜。布拉德利大学的一个由四名研究人员组成的团队将研究在硅单晶表面上生长和表征超薄金属膜，以及在非常低的热预算条件下在硅(100)和锗(100)表面上电子和光子辅助沉积SiGe合金膜。有待探索的问题包括硅上超薄金属薄膜的电导性以及可能伴随高电流密度的电迁移效应。此外，还将研究作为SiGe合金薄膜生长前驱体的吸附体内电子和光子驱动过程的基本问题。%该项目解决与技术相关的材料科学专题领域的基础研究问题。本科生将在该项目中发挥主要作用，研究机会将直接融入他们的学术计划。该研究计划将为本科生提供获得最先进的表面科学设备和独特的机会，以参与和发展材料科学领域令人兴奋的新水平的技能。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。***

This RUI project is a collaborative study of two issues in growth of thin films on Group IV semi-conductor surfaces, i.e., on silicon and germanium. A team of four researchers at Bradley Univer-sity will address growth and characterization of ultra thin metallic films on silicon single crystal surfaces, and electron and photon assisted deposition of SiGe alloy films on Si(100) and Ge(100) surfaces under very low thermal budget conditions. Issues to be explored include electrical con-ductivity in ultra-thin metallic films on silicon as well as electromigration effects which may ac-company high current densities in such films. Also, fundamental issues of electron and photon driven processes in adsorbates which may serve as precursors to growth of SiGe alloy films will be studied. %%% The project addresses fundamental research issues in topical areas of materials science having technological relevance. Undergraduate students will play a primary role in the project, with op-portunities for research integrated directly into their academic program. The research program will provide access to state-of-the-art surface science equipment and unique opportunities for un-dergraduates to participate in and develop skills in exciting areas of materials science at the na-noscale level. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***