SBIR Phase I: Band-gap Sensor for Wafer Temperature Mapping During Epitaxial Growth

这个小企业创新研究第一阶段项目将开发一种成像仪器，用于测量在分子束外延（MBE）加工过程中生长在砷化镓（GaAs）或磷化铟（InP）衬底上的外延晶片的温度分布。许多世界级的公司都参与了GaAs制造，以瞄准无线卫星和光纤通信市场。随着制造设施采用更大（6'）和多晶圆加工技术，温度均匀性控制的重要性变得越来越重要。高温均匀性是实现外延层电学和光学质量的必要条件，而衬底温度是外延生长过程中的关键工艺参数之一。将开发该仪器的模型及其在砷化镓温度监测中的应用。一个原型将被设计和建造。仪器的响应将在炉中进行测试。将确定与MBE室的详细设计有关的额外需求，以便对系统集成作为实时过程控制监测的可行性进行初步评估。该技术将为MBE和金属有机气相外延（MOVPE）工艺开发人员提供一种工具，以确定在新工艺室中产生的温度均匀性。在过去的三十年中，化合物半导体已经从研究实验室和小众军事应用发展到无线、卫星和光纤通信的大量商业应用。由于90年代需求的快速增长，晶圆尺寸从2‘增加到4’，目前世界各地的一些工厂正在引入6'晶圆生产线。

This Small Business Innovation Research Phase I project will develop an imaging instrument to measure the temperature distribution in epitaxial wafers grown on Galium Arsenide, GaAs, or Indium Phosphide, InP, substrates during Molecular Beam Epitaxy (MBE) processing. Many world class companies are involved in GaAs manufacturing to target the wireless satellite and fiber optic communication market. As fabrication facilities incorporate larger (6') and multiple wafer processing technology, the importance of temperature uniformity control becomes an increasingly critical issue. High temperature uniformity is required to achieve electrical and optical quality of the epilayer and substrate temperature is one of the key process parameters during epitaxial growth. Models will be developed of the instrument and its application to GaAs temperature monitoring. A prototype will be designed and constructed. The response of the instrument will be examined in a furnace. Additional requirements related to the detailed design of MBE chambers will be identified to establish a preliminary assessment of the feasibility of system integration as a monitor for real-time process control. This technology will provide MBE and Metal-Organic Vapor Phase Epitaxy (MOVPE) process developers with a tool to determine the temperature uniformity produced in new process chambers. Over the past three decades, compound semiconductors have evolved from research laboratories and niche military applications to high volume commercial applications in wireless, satellite and fiber optic communications. As a result of the rapid increase in demand in the 90's, the wafer size has increased from 2' to 4', and currently 6' wafer fabrication lines are being introduced in a number of facilities across the world.