SBIR Phase I: Gallium Antimonide (GaSb) for High Speed Infrared Photodetectors

SBIR 第一阶段：用于高速红外光电探测器的锑化镓 (GaSb)

• 批准号: 0319349
• 负责人: Aaron Moy
• 金额: $ 9.89万
• 依托单位: SVT ASSOCIATES, INCORPORATED
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0319349&HistoricalAwards=false
• 关键词: SBIR; Phase; Gallium; Antimonide; GaSb

This Small Business Innovation Research (SBIR) Phase I project proposes to create a new, high performance photodetector operating in the near/mid-infrared spectrum. Gallium antimonide (GaSb) will be used to create avalanche photodiodes (APDs) sensitive to wavelengths 1.7 micron. The GaSb material is a semiconductor with a direct energy bandgap and higher mobility than Silicon. Thus, GaSb has greater photonic absorption and can operate at a higher speed than Silicon. Previously issues regarding high levels of parasitic p-type doping have prevented GaSb from being applied to APD structures. This Phase I program aims to create GaSb layers that no longer have a high native doping level, making APD fabrication possible. The growth techniques demonstrated in this project will be applicable to other similar material systems, allowing practical development of novel devices. Scientific understanding of the electrical characteristics of actualized III-V compound semiconductors will also be improved.Upon successful completion of the program as a whole, photodetectors operating in the near/mid-IR spectrum ( 2 microns) will be developed that have higher speeds and greater sensitivity than current Silicon APD solutions. High-speed photodetectors will be readily applicable to atmospheric measurement systems, medical diagnostics, astronomical imaging and optical communications. Moreover, modifications to the GaSb material, such as the addition of Indium and Arsenic, can extend the operating spectrum out to longer wavelengths. Based on the knowledge gained in this program, APDs using InGaAsSb could be created which are sensitive photons out to 12 microns.

该小型企业创新研究（SBIR）第一阶段项目旨在创建一种在近/中红外光谱范围内工作的新型高性能光电探测器。锑化镓（GaSb）将用于制造对1.7微米波长敏感的雪崩光电二极管（APD）。GaSb材料是具有直接能带隙和比硅更高的迁移率的半导体。因此，GaSb具有更大的光子吸收，并且可以以比硅更高的速度操作。先前关于高水平的寄生p型掺杂的问题已经阻止了GaSb应用于APD结构。第一阶段计划的目标是创建不再具有高原生掺杂水平的GaSb层，使APD制造成为可能。在这个项目中展示的生长技术将适用于其他类似的材料系统，允许新设备的实际开发。在整个项目成功完成后，将开发出在近/中红外光谱（2微米）范围内工作的光电探测器，其速度和灵敏度将高于目前的硅APD解决方案。高速光电探测器将很容易应用于大气测量系统、医疗诊断、天文成像和光通信。此外，对GaSb材料的修改，例如添加铟和砷，可以将工作光谱扩展到更长的波长。基于在该计划中获得的知识，可以创建使用InGaAsSb的APD，其是12微米的敏感光子。