SBIR Phase I: Packaging of Integrated Advanced Power Electronics Through the Development of Silicon-Carbide (SiC) Based High-Temperature Multichip Power Modules (MCPMs)

这个小型企业创新研究（SBIR）第一阶段项目旨在调查和证明在300- 600摄氏度的温度范围内利用碳化硅（SiC）功率开关制造高温多芯片功率模块的可行性。通过利用这种新兴半导体的主要优势(包括高温操作，低开关损耗，非常高的开关频率，和高功率密度)，整个电力电子领域有可能在多个方面发生彻底的革命。碳化硅功率开关，减少开关损耗，将提高电力电子系统的整体电气效率。在高温下工作的能力将大大减少散热策略的尺寸和重量（可能多达一个数量级），并可能完全消除对电源模块散热器的要求。该项目涉及开发高温（300-600摄氏度）多芯片功率模块（mcpm），该模块将控制和SiC功率电子集成到单个紧凑模块中。这种电力电子方法的可行性将在第一阶段授权结束时得到验证，届时将演示一个3kW MCPM半桥功率转换器，该转换器利用实验原型SiC功率开关，在300℃的温度下工作。除了先进电力电子系统的技术进步外，SBIR一期项目的高温研究有可能大大提高对高温失效机制、热致电子封装应力和长期互连可靠性问题的科学理解。SiC基mcpm的商业化有可能在几乎所有可以想象的电动机驱动、电源和功率转换器中找到好处。由于SiC功率开关的电效率提高，这种mcpm的应用可以在全球范围内节省电能消耗。此外，在高温地质勘探仪器的开发中，可以立即实现商业化应用。

This Small Business Innovation Research (SBIR) Phase I project seeks to investigate and prove the feasibility of creating high-temperature multichip power modules that utilize silicon-carbide (SiC) power switches at temperatures in the range of 300- 600 deg C. By taking advantage of the key benefits of this emerging semiconductor (which includes high-temperature operation, low switching losses, very high switching frequencies, and high power densities) the entire field of power electronics has the potential to become completely revolutionized on multiple fronts. SiC power switches, with reduced switching losses, would improve the overall electrical efficiencies of power electronic systems. The ability to operate at high-temperatures would greatly reduce the size and weight of heat sinking strategies (perhaps by as much as an order of magnitude) and possibly remove the requirement for power module heat sinks all together. The project involves developing high-temperature (300-600 deg C) multichip power modules (MCPMs) that integrate control and SiC power electronics into a single compact module. Feasibility of such an approach to power electronics will be proven at the conclusion of the Phase I grant with the demonstration of a 3kW MCPM half-bridge power converter utilizing experimental prototype SiC power switches and operating at temperatures of 300 deg C. Since current silicon electronics are typically limited to approximately 150 deg C maximum temperature of operation, the high-temperature research in this SBIR Phase I project has the potential to greatly enhance scientific understanding of high-temperature failure mechanisms, thermal induced electronic packaging stresses, and long-term interconnect reliability issues in addition to technical advancement of state-of-the-art power electronics systems.The commercialization of SiC based MCPMs has the potential to find benefit in nearly every electric motor drive, power supply, and power converter conceivable. The application of such MCPMs could save electrical energy consumption worldwide, due to the improved electrical efficiency of SiC power switches alone. Furthermore, an immediate commercialization application is possible in the development of high-temperature geological petroleum exploration instrumentation.