SBIR Phase I: Packaging of Integrated Advanced Power Electronics Through the Development of Silicon-Carbide (SiC) Based High-Temperature Multichip Power Modules (MCPMs)

SBIR 第一阶段：通过开发基于碳化硅 (SiC) 的高温多芯片功率模块 (MCPM) 来封装集成先进电力电子器件

• 批准号: 0339721
• 负责人: Alexander Lostetter
• 金额: $ 9.98万
• 依托单位: Arkansas Power Electronics International, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0339721&HistoricalAwards=false
• 关键词: SBIR; Phase; Packaging; Integrated; Advanced

This Small Business Innovation Research (SBIR) Phase I project seeks to investigate and prove the feasibility of creating high-temperature multichip power modules that utilize silicon-carbide (SiC) power switches at temperatures in the range of 300- 600 deg C. By taking advantage of the key benefits of this emerging semiconductor (which includes high-temperature operation, low switching losses, very high switching frequencies, and high power densities) the entire field of power electronics has the potential to become completely revolutionized on multiple fronts. SiC power switches, with reduced switching losses, would improve the overall electrical efficiencies of power electronic systems. The ability to operate at high-temperatures would greatly reduce the size and weight of heat sinking strategies (perhaps by as much as an order of magnitude) and possibly remove the requirement for power module heat sinks all together. The project involves developing high-temperature (300-600 deg C) multichip power modules (MCPMs) that integrate control and SiC power electronics into a single compact module. Feasibility of such an approach to power electronics will be proven at the conclusion of the Phase I grant with the demonstration of a 3kW MCPM half-bridge power converter utilizing experimental prototype SiC power switches and operating at temperatures of 300 deg C. Since current silicon electronics are typically limited to approximately 150 deg C maximum temperature of operation, the high-temperature research in this SBIR Phase I project has the potential to greatly enhance scientific understanding of high-temperature failure mechanisms, thermal induced electronic packaging stresses, and long-term interconnect reliability issues in addition to technical advancement of state-of-the-art power electronics systems.The commercialization of SiC based MCPMs has the potential to find benefit in nearly every electric motor drive, power supply, and power converter conceivable. The application of such MCPMs could save electrical energy consumption worldwide, due to the improved electrical efficiency of SiC power switches alone. Furthermore, an immediate commercialization application is possible in the development of high-temperature geological petroleum exploration instrumentation.

该小型企业创新研究（SBIR）第一阶段项目旨在研究和证明在300- 600摄氏度的温度范围内使用碳化硅（SiC）电源开关的高温多芯片电源模块的可行性。 通过利用这种新兴半导体的关键优势（包括高温工作、低开关损耗、极高开关频率和高功率密度），整个电力电子领域有可能在多个方面实现彻底革命。 SiC功率开关具有降低的开关损耗，将提高电力电子系统的整体电效率。 在高温下工作的能力将大大减少散热策略的尺寸和重量（可能多达一个数量级），并可能消除对电源模块散热器的要求。 该项目涉及开发高温（300-600摄氏度）多芯片功率模块（MCPM），将控制和SiC功率电子集成到单个紧凑模块中。这种电力电子方法的可行性将在第一阶段资助结束时得到证明，该阶段将展示一个3 kW MCPM半桥功率转换器，该转换器使用实验原型SiC功率开关，并在300摄氏度的温度下工作。 由于目前的硅电子器件通常限于约150摄氏度的最高工作温度，因此SBIR第一阶段项目中的高温研究有可能大大提高对高温失效机制、热诱导电子封装应力和长期的互连可靠性问题，除了国家的技术进步，基于SiC的MCPM的商业化具有在几乎所有可想到的电动机驱动器、电源和功率转换器中发现益处的潜力。 这种MCPM的应用可以在全球范围内节省电能消耗，这是由于SiC功率开关本身的电气效率提高。 此外，在高温地质石油勘探仪器的开发中有可能立即商业化应用。