CAREER: Spin degree of freedom in hole semiconductor nanostructures

职业：空穴半导体纳米结构的自旋自由度

• 批准号: 0348289
• 负责人: Leonid Rokhinson
• 金额: $ 40万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-07-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0348289&HistoricalAwards=false
• 关键词: CAREER; Spin; degree; freedom; hole

Spin is a fascinating property of matter which has no classical analog and which is largely ignored in mainstream charge-based electronics. As the scalability of conventional devices nears exhaustion, the spin degree of freedom moves to the forefront of research in the quest to find alternative device paradigms. Holesin semiconductor nanostructures are especially attractive for future implementation of spintronic devices due to their potentially very long spin relaxation times. The goal of this proposal is to understand mechanisms of spin interactions in p-type semiconductor nanostructures, to develop functional spin-based quantum devices, and to develop a versatile educational program closely integrated with this research project.Semiconductor nanostructures provide a unique controllable environment where a single spin can be isolated and fundamental aspects of its interactions can be investigated. Hole nanostructures have a peculiar set of parameters and symmetries that are largely unexplored. Strong anisotropy of exchange interaction, effective mass and $g$-factor for high index crystallographic axises will allow the applicant to investigate different mechanisms contributing to spin relaxation and to devise efficient methods of spin manipulation. Applications relevant to the emerging fields of spintronics and quantum information processing will be investigated.Educational activities are an essential part of the proposed career development plan and are closely integrated with the proposed research program, which include (i) training of graduate and undergraduate students in state-of-the-art experimental techniques via their direct involvement in the proposed research program, (ii) development of a special course ``Physics of Low-dimensional Systems'' and (iii) development of an enrichment program for K-12 students.

自旋是物质的一个迷人的属性，它没有经典的模拟，在主流的电荷电子学中基本上被忽视了。随着传统设备的可扩展性接近枯竭，自旋自由度移动到研究的最前沿，以寻找替代设备的范例。空穴半导体纳米结构由于其潜在的非常长的自旋弛豫时间而对于未来实现自旋电子器件特别有吸引力。本计划的目标是了解p型半导体纳米结构中自旋相互作用的机制，开发基于自旋的功能量子器件，并开发一个与本研究项目紧密结合的多功能教育计划。半导体纳米结构提供了一个独特的可控环境，可以隔离单个自旋并研究其相互作用的基本方面。 空穴纳米结构具有一组特殊的参数和对称性，这些参数和对称性在很大程度上尚未被探索。 强各向异性的交换相互作用，有效质量和$g$因子高指数晶体轴将允许申请人调查不同的机制，有助于自旋弛豫和设计有效的方法自旋操纵。教育活动是拟议职业发展计划的重要组成部分，并与拟议研究计划紧密结合，其中包括：（i）通过直接参与拟议研究计划，培养研究生和本科生掌握最先进的实验技术，（二）开发一门特殊的课程"低维系统物理学“，（三）为K-12学生开发一个充实计划。