Atomistic Origins of Ion Bombardment Nanoscale Surface Instability

离子轰击纳米级表面不稳定性的原子起源

基本信息

项目摘要

Atomistic Origins of Ion Bombardment Nanoscale Surface InstabilityNSF Proposal 0510624 to the Division of Civil and Mechanical SystemsPI: Harley T. Johnson; University of Illinois at Urbana-ChampaignAbstractThe objective of the program is to reveal, by means of computational observations at the atomic scale, how nanometer scale structures form during ion-bombardment processing of semiconductor surfaces. For many years this phenomenon has been observed experimentally, but the atomistic mechanisms driving this instability have never been well understood. This work has broad applications in nanomanufacturing and surface engineering for micro- and nanoelectronics.Using molecular dynamics simulations, the effects of many different variables on the spontaneous formation of nano-ripples and nano-dots will be investigated. Factors such as incident ion energy, incident ion angle, initial surface features, and stress, will be considered. By building a large database of molecular dynamics results, it will be possible to inform both the empirical continuum models and the extensive experimental observations of the ion bombardment nanoscale surface instability. The program will make use of several close collaborations with experimental groups studying ion bombardment in order to maximize the impact of the results.Beyond the broad technical impact in nanotechnology and electronics, the program has a strong educational mission. The program will support two graduate students, and the PI will participate in developing an undergraduate course in nanomechanics. Also, the PI and co-PI will introduce this research area to undergraduates at the University of Illinois through partnership with an NSF site program on campus. These activities will help to attract the best undergraduate and graduate students into nanoscale science and engineering and specifically to nanomanufacturing and surface engineering for micro- and nanoelectronics.
离子轰击纳米尺度表面不稳定性的原子起源。约翰逊;伊利诺伊大学厄巴纳-香槟分校摘要该项目的目的是通过原子尺度的计算观测,揭示半导体表面在离子轰击过程中纳米尺度结构的形成。多年来,这种现象已经被实验观察到,但驱动这种不稳定性的原子机制从未被很好地理解。这项工作在纳米制造和微纳电子表面工程中具有广泛的应用。利用分子动力学模拟,将研究许多不同变量对纳米波纹和纳米点自发形成的影响。将考虑诸如入射离子能量、入射离子角度、初始表面特征和应力等因素。通过建立一个大型的分子动力学结果数据库,将有可能告知经验连续模型和离子轰击纳米级表面不稳定性的广泛实验观察。该计划将利用与研究离子轰击的实验小组的几个密切合作,以最大限度地提高结果的影响。除了在纳米技术和电子学的广泛技术影响,该计划有一个强大的教育使命。该计划将支持两名研究生,PI将参与开发纳米力学本科课程。此外,PI和co-PI将通过与校园内的NSF现场项目合作,向伊利诺伊大学的本科生介绍这一研究领域。这些活动将有助于吸引最好的本科生和研究生进入纳米科学和工程,特别是纳米制造和表面工程的微型和纳米电子学。

项目成果

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Harley Johnson其他文献

Harley Johnson的其他文献

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{{ truncateString('Harley Johnson', 18)}}的其他基金

Illinois Materials Research Science and Engineering Center (I-MRSEC)
伊利诺伊州材料研究科学与工程中心 (I-MRSEC)
  • 批准号:
    2309037
  • 财政年份:
    2023
  • 资助金额:
    --
  • 项目类别:
    Cooperative Agreement
Moire Patterns and the Mechanics of Defects and Interfaces in 2D Materials
二维材料中的莫尔图案以及缺陷和界面的力学
  • 批准号:
    1825300
  • 财政年份:
    2018
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Material Removal Mechanisms in Focused Ion Beam Nanopore Drilling
聚焦离子束纳米孔钻削中的材料去除机制
  • 批准号:
    1463587
  • 财政年份:
    2015
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
GOALI: Polarized Infrared Imaging for the Mechanics of Photovoltaic Wafers
GOALI:用于光伏晶片力学的偏振红外成像
  • 批准号:
    1300466
  • 财政年份:
    2013
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Probing and optimizing quantum dot confined states for next generation intermediate band solar cells
探测和优化下一代中能带太阳能电池的量子点受限态
  • 批准号:
    0933348
  • 财政年份:
    2009
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
Support for Student Programs at the 2008 Society of Engineering Science Annual Technical Meeting; held in October 2008, Urbana, IL
在2008年工程科学学会年度技术会议上支持学生项目;
  • 批准号:
    0834098
  • 财政年份:
    2008
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Bridging Time Scales with a Unit Process Approach for Modeling Ion Interactions with Materials
使用单元过程方法桥接时间尺度来模拟离子与材料的相互作用
  • 批准号:
    0825173
  • 财政年份:
    2008
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Collaborative Research: Focused Electric Field Induced Ion Transport: A Patterning Process
合作研究:聚焦电场诱导离子传输:图案化过程
  • 批准号:
    0700045
  • 财政年份:
    2007
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Quantitative Model-Based Photoelastic Characterization of Wafer-Bonding Stresses: a Tool for Industry and Education
基于定量模型的晶圆键合应力光弹性表征:工业和教育工具
  • 批准号:
    0700704
  • 财政年份:
    2007
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
NER: Optimized Photonic Bandgap Devices with Nanoscale Disorder
NER:具有纳米级无序的优化光子带隙器件
  • 批准号:
    0508473
  • 财政年份:
    2005
  • 资助金额:
    --
  • 项目类别:
    Standard Grant

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  • 批准号:
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